Characterization of MgO:Cd thin films grown by SILAR method

Abstract

The undoped and 1%, 2% and 3% Cd doped MgO nanostructures were grown by SILAR method on the soda lime glass substrate. X-ray diffractometer (XRD), ultraviolet-visible spectrometer, scanning electron microscope (SEM), photoluminesans (PL), X-ray photoelectron spectroscopy (XPS) measurements were taken to investigate Cd doping effects on the structural, optical and morphological properties of MgO nanostructures. XRD measurements show that the samples have cubic structure and the planes of (200), (220)

Systematic Evolution of Optical Bandgap and Local Chemical State in Transparent MgO and HfO2 Resistive Switching Materials

“…[25] The background logo of "NIT Silchar" is visible through oxide thin films without any refraction or distortion, as demonstrated in the insets of Figure 5a,b. The obtained optical properties, such as high transmissivity and low reflection in the visible region, were consistent with previous work, [18,26,27] making both oxide thin films acceptable for optoelectronic applications [2,13] and antireflection coating. [25] The nature and magnitude of the optical bandgap (E g ) of oxides were evaluated using a plot of absorbance coefficient versus photon energy.…”

“…If the sample does have a direct bandgap, the slope (A) of (αhv) 2 versus hv will be linear, and the extrapolation (αhv ¼ 0) will provide the value of E g . [18,26] Both the oxide thin films follow Equation ( 1), and the optical bandgap of 5.6 and 4.2 eV were calculated using the Tauc plots, depicted in Figure 5c,d, respectively. Table 1 compares the direct allowed bandgap nature of deposited HfO 2 and MgO thin films with various literature reports.…”

Exploring the Physical Properties Related to Resistive Switching Events in HfO2-Based RRAM Devices with an Analytical Framework

“…The observed optical characteristics, such as excellent transmissivity, are consistent with prior works, , suggesting potential application of a HfO 2 thin film in optoelectronic devices. , The optical bandgap ( E g ) of the HfO 2 thin film was evaluated from the absorbance coefficient versus photon energy plot, where the direct bandgap material follows eq . false( α h v false) 2 = A false( h v − E g false) where hv is the photon energy, h is Planck’s constant, and α is the absorption coefficient. Here, the extrapolation of ( αhv ) 2 versus hv slope yields the E g in the Tauc plot for a direct bandgap material. , The calculated Tauc plot is illustrated in Figure (d), where an E g of 5.6 eV is estimated for the HfO 2 thin film, consistent with the literature. ,, …”

“…Here, the extrapolation of (αhv) 2 versus hv slope yields the E g in the Tauc plot for a direct bandgap material. 36,39 The calculated Tauc plot is illustrated in Figure 1(d), where an E g of 5.6 eV is estimated for the HfO 2 thin film, consistent with the literature. 34,36,40 The electrical measurement was performed by connecting the applied voltage (V a ) to the Cu electrode (TE) and grounding the W electrode (BE), Figure 2…”

The Band-Gap Studies of Short-Period CdO/MgO Superlattices

“…In the case of layers obtained by the pulsed laser deposition technique the energy band gap of CdMgO was shifted to 3.4 eV [ 19 ], whereas in polycrystalline In-doped CdMgO films the maximum value of the energy gap was reported to be about 5 eV [ 20 ]. At the opposite end of the composition range, undoped and 1%, 2% and 3% Cd-doped MgO nanostructures were grown by the successive ionic layer adsorption and reaction (SILAR) method [ 21 ]. In the whole composition range only nanoparticles were obtained, but still in a range of Mg content of 0.34 ≤ x ≤ 0.84 the co-existence of two phases of Cd-rich and Mg-rich Cd 1− x Mg x O is reported [ 22 ].…”