Characterization of microFLASH R Memory using "Dummy" GOX Structures

Roizin, Yakov; Gutman, M.; Aloni, Efraim; Kairys, Victor; Zisman, P.

doi:10.7567/ssdm.2002.a-6-4

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2015

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“…This spreading of the trapped charge has been studied as the lateral charge migration in the multi-bit NOR-type SONOS flash memory structure in particular. In this structure, the local profile of the trapped charge is important to distinguish the cell state [11,12]. How-ever, even in NAND flash, the intra-nitride migration can be a serious problem due to the continuous trapping layer structure in the 3D scheme.…”

Section: Introductionmentioning

confidence: 99%

Charge Spreading Effect of Stored Charge on Retention Characteristics in SONOS NAND Flash Memory Devices

Kim¹,

Yang²,

Kim³

et al. 2015

Transactions on Electrical and Electronic Materials

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This research investigates the impact of charge spreading on the data retention of three-dimensional (3D) siliconoxide-nitride-oxide-silicon (SONOS) flash memory where the charge trapping layer is shared along the cell string. In order to do so, this study conducts an electrical analysis of the planar SONOS test pattern where the silicon nitride charge storage layer is not isolated but extends beyond the gate electrode. Experimental results from the test pattern show larger retention loss in the devices with extended storage layers compared to isolated devices. This retention degradation is thought to be the result of an additional charge spreading through the extended silicon nitride layer along the width of the memory cell, which should be improved for the successful 3-D application of SONOS flash devices.

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Section: Introductionmentioning

confidence: 99%