Characterization of midwave infrared InSb avalanche photodiode

Abautret, Johan; Pérez, Jean-Philippe; Evirgen, A.; Rothman, J.; Cordat, A.; Christol, Philippe

doi:10.1063/1.4922977

Cited by 38 publications

(25 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Low k factor values have been observed for detectors fabricated from its constituent materials InAs 25,26 and InSb. 27 Those materials are characterized by very low electron masses, large hole masses, and large separation between the Γ conduction band minimum and the X and L satellite valleys. The scattering rates for impact ionization tend to be higher than phonon scattering to the satellite valleys.…”

Section: Performance and Analysismentioning

confidence: 99%

Recent progress in avalanche photodiodes for sensing in the IR spectrum

et al. 2016

View full text Add to dashboard Cite

We report low-noise avalanche gain from photodiodes composed of a previously uncharacterized alloy, Al x In 1-x As y Sb 1-y , grown lattice-matched on GaSb substrates. By varying the aluminum content the direct bandgap can be tuned from 0.25 eV (0% aluminum) to 1.24 eV (75% aluminum), corresponding to photon wavelengths from 5000 nm to 1000 nm, with the transition from direct-gap to indirect-gap occurring at ~1.18 eV (~72% aluminum), or 1050 nm. This has been used to fabricate separate absorption, charge, and multiplication (SACM) APDs using Al 0.7 In 0.3 As 0.3 Sb 0.7 for the multiplication region and Al 0.4 In 0.6 As 0.3 Sb 0.7 for the absorber. Gain values as high as 100 have been achieved and the excess noise factor is characterized by a k value of 0.01, which is comparable to or below that of Si. In addition, since the bandgap of the absorption region is direct, its absorption depth is 5 to 10 times shorter than indirect-bandgap silicon, potentially enabling significantly higher operating bandwidths.

show abstract

Section: Performance and Analysismentioning

confidence: 99%

Recent progress in avalanche photodiodes for sensing in the IR spectrum

et al. 2016

View full text Add to dashboard Cite

show abstract

“…Indium antimonide (InSb) QDs causes particular interest due to the unique properties of indium antimonide: ultra-high electron mobility (up to 78000 cm 2 V −1 s −1 ), direct and narrow (0.18 eV) band gap, small effective masses ofconduction electrons(0.013m 0 , m 0 -mass of a free electron) [7] and large de Broglie wavelength of electrons -up to 55 nm.…”

Section: Introductionmentioning

confidence: 99%

Methodology of analyzing the InSb semiconductor quantum dots parameters

Михайлов¹,

Kabanov²,

Glukhovskoy³

et al. 2019

Nanosystems: Phys. Chem. Math.

View full text Add to dashboard Cite

The investigation of indium antimonide quantum dots has been carried out by the methods of differential normalized tunnel current-voltage characteristics, electron microscopy, particle size analysis and spectral dependence of the absorption coefficient. Qualitatively and quantitatively consistent measurement results were obtained with an error less than 15 %. It is concluded that the analysis of normalized differential tunnel current-voltage characteristics is an effective method of express-analysis that can be used in investigation of quantum-sized objects properties.

show abstract

“…Besides the p-n diode, other types of opto-electronic devices were proposed. And among them, the avalanche photodiodes should be noted [19] (where the impact ionization properties of carriers are used), quantum well [20] and quantum dot [21] infrared photodetectors. Two latter examples exploit the mechanism of intersubband excitations in quantum heterostructures with artificially engineered band structure [22,23].…”

Section: Introductionmentioning

confidence: 99%

“…Among these mechanisms, there are bulk and surface diffusion currents, bulk and surface generation-recombination currents, band-to-band and impurity-assisted tunneling currents [26][27][28]. Besides, the effect of carrier avalanche multiplication can also occur [19]. The existing analytical transport models that give the general behavior of I-V dependences have a number of restrictions for applicability.…”

Section: Introductionmentioning

confidence: 99%

Be-ion implanted p-n InSb diode for infrared applications. Modeling, fabrication and characterization

Korotyeyev¹

2018

Semicond. Phys. Quantum Electron. Optoelectron

View full text Add to dashboard Cite

Transport theory for modeling the electric characteristics of high-quality p-n diodes has been developed. This theory takes into account a non-uniform profile of pdoping, finite thickness of the quasi-neutral regions and possible non-uniformity of the bulk recombination coefficient. The theory is based on related solutions of the Poisson equation, drift-diffusion equation and continuity equation with a generation-recombination term taking into account the simple band-to-band generation/recombination model. We have ascertained that the non-uniform profile of p-doping can lead to formation of p-n junctions with a specific two-slope form of the electrostatic barrier and two regions with the high built-in electric fields. We have found that at strong p +-doping the band structure of the InSb p-n junction has the form that can facilitate the emergence of additional mechanisms of current flow due to the tunneling and avalanche effects at the reverse bias. Using the literary data of the electron and hole lifetimes in InSb at cryogenic temperatures, we have found that the coefficient of bulk recombination can have an essential spatial dependence and considerably increases in the space charge region of p-n diode. The theory was applied to our analysis of p-n InSb diodes with p +-doping by using Be-ion implantation performed in ISP NASU. The theory predicts optimal conditions for detection of infrared emission. The technological process of fabrication, processing and testing has been described in details. Theoretically, it has been found that for parameters of the fabricated diodes and at 77 K the dark currents limited by diffusion and generation-recombination mechanisms should be less than 0.1 µA at the inverse bias of the order of 0.1 V. The measured diode's I-V characteristics were expected to have strong asymmetry, however, dark currents are by one order larger than those predicted by theory. The latter can be associated with additional current mechanisms, namely: tunneling and avalanche effects.

show abstract

Characterization of midwave infrared InSb avalanche photodiode

Abstract: International audienc

Cited by 38 publications

References 23 publications

Recent progress in avalanche photodiodes for sensing in the IR spectrum

Recent progress in avalanche photodiodes for sensing in the IR spectrum

Methodology of analyzing the InSb semiconductor quantum dots parameters

Be-ion implanted p-n InSb diode for infrared applications. Modeling, fabrication and characterization

Contact Info

Product

Resources

About