The use of trivalent erbium (Er3+), typically
embedded
as an atomic defect in the solid-state, has widespread adoption as
a dopant in telecommunication devices and shows promise as a spin-based
quantum memory for quantum communication. In particular, its natural
telecom C-band optical transition and spin-photon interface make it
an ideal candidate for integration into existing optical fiber networks
without the need for quantum frequency conversion. However, successful
scaling requires a host material with few intrinsic nuclear spins,
compatibility with semiconductor foundry processes, and straightforward
integration with silicon photonics. Here, we present Er-doped titanium
dioxide (TiO2) thin film growth on silicon substrates using
a foundry-scalable atomic layer deposition process with a wide range
of doping controls over the Er concentration. Even though the as-grown
films are amorphous after oxygen annealing, they exhibit relatively
large crystalline grains, and the embedded Er ions exhibit the characteristic
optical emission spectrum from anatase TiO2. Critically,
this growth and annealing process maintains the low surface roughness
required for nanophotonic integration. Finally, we interface Er ensembles
with high quality factor Si nanophotonic cavities via evanescent coupling
and demonstrate a large Purcell enhancement (≈300) of their
optical lifetime. Our findings demonstrate a low-temperature, nondestructive,
and substrate-independent process for integrating Er-doped materials
with silicon photonics. At high doping densities this platform can
enable integrated photonic components such as on-chip amplifiers and
lasers, while dilute concentrations can realize single ion quantum
memories.