Characterization of MultiStep Electron Charging to Silicon-Quantum-Dot Floating Gate by Applying Pulsed Gate Biases

Nagai, Takaya; Ikeda, Mitsuhisa; Shimizu, Yasuo; Seiichiro, Higashi; Miyazaki, Seiichi

doi:10.7567/ssdm.2005.g-2-6

Cited by 3 publications

(4 citation statements)

References 4 publications

(6 reference statements)

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“…and to diminish the Coulomb blockade against further injection. As for electron discharging from the Si-QDs floating gate [15], we have also confirmed the metastable charged state with almost the same drain current level as obtained by electron charging as shown in Fig. 12.…”

Section: Ecs Transactions 11 (6) 233-243 (2007)supporting

confidence: 79%

Characterization of Electronic Charged States of Si-Based Quantum Dots for Floating Gate Application

2007

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Discrete charged states of individual Si quantum dots (QDs) with and without Ge core have been studied. When Si-QDs are charged with a few electrons or holes, surface potential images showing a characteristic potential profile with a dimple around the center of the charged dots are observable because of the Coulomb repulsion among the charges retained in the dot. By an introduction of a Ge core in the Si-QD, electrons are retained in the Si clad and holes in the Ge core reflecting the energy band discontinuity at the Si-clad/Ge-core interface. The ionized impurity doping into the dots enables us to manage the bias conditions for stable charged states. For the Si-QDs floating gate in MOS capacitors and n-MOSFETs, discrete charged states are also confirmed from multiple-step charging and discharging characteristics associated with collective motion of electrons regulated by Coulombic interaction between electrons in dots and in the inversion layer.

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Section: Ecs Transactions 11 (6) 233-243 (2007)supporting

confidence: 79%

Characterization of Electronic Charged States of Si-Based Quantum Dots for Floating Gate Application

2007

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“…To get clear insight into the charging characteristics of the Si-QDs floating gate, the temporal changes in the drain current after applying a single positive pulsed gate bias have been measured systematically as functions of pulse voltage height and width [17]. The electron charging with pulsed gate biases below certain height and width cannot create a stable state.…”

Section: Characterization Of Multi-step Charging To Si-qds Floating Gmentioning

confidence: 99%

Control of electronic charged states of Si-based quantum dots for floating gate application

Miyazaki¹,

Makihara²,

Ikeda³

2008

Thin Solid Films

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“…The current level for charged states shows stepwise reduction with respect to the pulse width at any pulse height, reflecting discrete charged states of the Si-QDs floating gate arising from quantization energy and electron charging. [4][5][6] In other words, the charged states of the Si-QDs floating gate reach the final state through two metastable charged states. The current level for each discrete charged state is independent of the pulse height.…”

Section: Resultsmentioning

confidence: 99%

“…5) We also observed a similar multistep electron discharging from the Si-QDs floating gate, which we also interpreted in terms of the electron redistribution. 6) However, writing and erasing operations in such unique discrete charged states of the Si-QDs floating gate have not yet been characterized in the operating time suitable for practical use. In this work, we focus on the writing and erasing characteristics in a Si-QDs floating gate with discrete charged states obtained by applying single-pulsed gate biases with pulse widths ranging from 10 ns to 100 ms.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Multistep Electron Charging and Discharging of a Silicon Quantum Dots Floating Gate by Applying Pulsed Gate Biases

Matsumoto

Ikeda

Higashi

et al. 2008

jjap

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Electron charging and discharging operations for a silicon quantum dots (Si-QDs) floating gate with discrete charged states were characterized in n-metal–oxide–semiconductor field-effect-transistors (MOSFETs) by applying single-pulsed gate biases Vg with pulse widths ranging from 10 ns to 100 ms. The drain current levels for charged states increase stepwise with Vg pulse width, which indicates multistep electron charging in the Si-QDs floating gate due to quantization energy and electron charging. The gate voltages required to minimize the time for charging and discharging the Si-QDs floating gate are limited by the leakage current through the control oxide, which partially compensates the charging or discharging current through the tunnel oxide in the high-gate-voltage region. The transient variation of the drain current at zero gate bias, after the application of pulsed gate biases for the dot floating gate to be charged, shows that a critical transition from an unstable charged state to a stable one occurs, depending on the pulse height or width. This suggests the redistribution of electrons in the floating gate during the metastable state, which involves a reduction in the effective charging energy and the resultant elimination of the Coulomb blockade.

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Characterization of MultiStep Electron Charging to Silicon-Quantum-Dot Floating Gate by Applying Pulsed Gate Biases

Cited by 3 publications

References 4 publications

Characterization of Electronic Charged States of Si-Based Quantum Dots for Floating Gate Application

Characterization of Electronic Charged States of Si-Based Quantum Dots for Floating Gate Application

Control of electronic charged states of Si-based quantum dots for floating gate application

Characterization of Multistep Electron Charging and Discharging of a Silicon Quantum Dots Floating Gate by Applying Pulsed Gate Biases

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