Characterization of N-doped TiO2 films prepared by reactive sputtering using air/Ar mixtures

Chan, Mu-Hsuan; Lu, Fu-Hsing

doi:10.1016/j.tsf.2009.09.062

Cited by 42 publications

(20 citation statements)

References 26 publications

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“…These species are more stable in aggressive media as the remaining peak at 454.9 eV after CA indicates (figure 4a6). Figure 4b shows the O 1s spectra featuring four regions of interest: TiO 2 species located at 530.6 eV [26], TiO x-2 N x /NO species at 531.4 eV indicating nitrogen incorporation [24], O 2 /H 2 O species at 532.5 eV [27] and adsorbed NO x species at 533.3 eV [28]. The pristine foil has TiO 2 nature as indicates the dominant peak at 530.6 eV, which reamains unaltered after the CA (see figures 4b1 and 4b2).…”

Section: Methodsmentioning

confidence: 99%

Exploring the incorporation of nitrogen in titanium and its influence on the electrochemical corrosion resistance in acidic media

et al. 2016

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The role of the nitrogen incorporation into titanium, its chemical nature, the location in the titanium lattice and its electrochemical performance were investigated by a combination of several spectroscopy and microscopy techniques using samples prepared by CVD of NH 3 at different temperatures and successive electrochemically tested in 1 M of HClO 4 . We found that nitrogen is incorporated in either the interstitial or substitutional site of the lattice depending on the preparation temperature modifying strongly its corrosion resistance which was ascribed to the N 2p hybridization with the Ti 3d orbitals. It was found that at low temperature the N 2p orbitals were more likely to hybridize with Ti 3d -t 2g orbitals while higher temperature favours the hybridization with the Ti 3d -e g orbitals. This is responsible for the corrosion resistance shown by the samples prepared at higher temperature.

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Section: Methodsmentioning

confidence: 99%

Exploring the incorporation of nitrogen in titanium and its influence on the electrochemical corrosion resistance in acidic media

et al. 2016

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“…However, it is generally accepted that a N component at approximately 396 eV corresponds to N substituted for O in the TiO2 phase [12,[51][52][53][54][55][56][57][58][59]. It has recently been shown that a peak at approximately 400 eV is observed on many surfaces due to the presence of Ncontaining organic contamination [60], but a peak can also occur at a similar binding energy due to the presence of interstitial NO species [51,54,[61][62][63][64]. Furthermore, the peak at approximately 402 eV is associated with surface contamination [60].…”

Section: Alumina Membranementioning

confidence: 99%

Surface characterisation and photocatalytic performance of N-doped TiO2 thin films deposited onto 200 nm pore size alumina membranes by sol–gel methods

Grilli

Camillo

Lozzi

et al. 2015

Materials Chemistry and Physics

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“…The role of oxygen vacancies following substitution of nitrogen for oxygen has recently become more and more appreciated. Chan and Lu [42] attributed the red-shift of absorption edge in substitutionally doped nitrogen TiO 2−x N x films to presence of the oxygen vacancies.…”

Section: Resultsmentioning

confidence: 99%

Study of N-doped TiO₂ thin films for photoelectrochemical hydrogen generation from water

et al. 2015

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Abstract:The present work deals with nitrogen-doped stoichiometric TiO 2 :N and non-stoichiometric TiO 2−x :N thin films deposited by means of dc-pulsed reactive sputtering for application as photoanodes for hydrogen generation from water, using solar energy. Stoichiometric thin films of TiO 2 crystallize as a mixture of anatase and rutile while rutile phase predominates in TiO 2 :N at higher nitrogen flow rates as shown by X-ray diffraction at grazing incidence, XRD GID. Lack of bulk nitridation of stoichiometric TiO 2 :N is indicated by valence-to-core X-ray emission spectroscopy, XES, analysis. The energy band gap as well as flat band potential remain almost unaffected by increasing nitrogen flow rate in this case. In contrast to that, non-stoichiometric thin films of TiO 2-x :N demonstrate systematic evolution of the structural, morphological, optical and photolectrochemical properties upon increasing level of nitrogen doping. Pronounced changes in the growth pattern of non-stoichiometric TiO 2-x :N upon varied nitrogen flow rate, demonstrated by scanning electron microscopy, SEM, can be easily correlated with the crystallographic properties studied by XRD GID. Relative positions of Kβ'' XES lines of the TiO 2-x :N thin films, which depend strongly on the nature of the ligands and their local coordination, change with the increasing nitrogen flow. Doping of nonstoichiometric titanium dioxide with nitrogen shifts the absorption spectrum towards the visible range and increases considerably the flat band potential which is beneficial for water photolysis.

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Characterization of N-doped TiO2 films prepared by reactive sputtering using air/Ar mixtures

Cited by 42 publications

References 26 publications

Exploring the incorporation of nitrogen in titanium and its influence on the electrochemical corrosion resistance in acidic media

Exploring the incorporation of nitrogen in titanium and its influence on the electrochemical corrosion resistance in acidic media

Surface characterisation and photocatalytic performance of N-doped TiO2 thin films deposited onto 200 nm pore size alumina membranes by sol–gel methods

Study of N-doped TiO₂ thin films for photoelectrochemical hydrogen generation from water

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Characterization of N-doped TiO2 films prepared by reactive sputtering using air/Ar mixtures

Cited by 42 publications

References 26 publications

Exploring the incorporation of nitrogen in titanium and its influence on the electrochemical corrosion resistance in acidic media

Exploring the incorporation of nitrogen in titanium and its influence on the electrochemical corrosion resistance in acidic media

Surface characterisation and photocatalytic performance of N-doped TiO2 thin films deposited onto 200 nm pore size alumina membranes by sol–gel methods

Study of N-doped TiO2 thin films for photoelectrochemical hydrogen generation from water

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Study of N-doped TiO₂ thin films for photoelectrochemical hydrogen generation from water