Characterization of N-type and P-type Aluminum Antimonides on Si substrates for room-temperature optoelectronic devices

Cheewajaroen, Kulthawat; Saengkaew, Phannee; Sanorpim, Sakuntam; Yordsri, Visittapong; Thanachayanont, Chanchana; Nuntawong, Noppadon; Rathanasakulthong, Watcharee

doi:10.1016/j.mssp.2018.08.007

Cited by 5 publications

(2 citation statements)

References 20 publications

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“…When Zn atoms substituted Al atoms, the crystal lattice of AlSb would have changed for the different atomic radius sizes of Al and Zn atoms, causing the AlSb crystal lattice to be distorted. Thus, the crystal lattice distortion appeared as a shift in Raman spectrum [19,20]. Approximately the same Raman shift indicated similar structural stress among the three AlSb:Zn thin films [21].…”

Section: Resultsmentioning

confidence: 96%

The Properties of Zn-Doped AlSb Thin Films Prepared by Pulsed Laser Deposition

Tang

Wang

et al. 2019

Coatings

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Aluminum antimony (AlSb) is a promising photovoltaic material with a band gap of about 1.62 eV. However, AlSb is highly deliquescent and not stable, which has brought great difficulties to the applications. Based on the above situation, there are two purposes for preparing our Zn-doped AlSb (AlSb:Zn) thin films: One is to make P-type AlSb and the other is to find a way to suppress the deliquescence of AlSb. The AlSb:Zn thin films were prepared on glass substrates at different substrate temperatures by using the pulsed laser deposition (PLD) method. The structural, surface morphological, optical, and electrical properties of AlSb:Zn films were investigated. The crystallization of AlSb:Zn thin films was enhanced and the electrical resistivity decreased as the substrate temperature increased. The scanning electron microscopy (SEM) images indicated that the grain sizes became bigger as the substrate temperatures increased. The Raman vibration mode AlSb:Zn films were located at ~107 and ~142 cm−1 and the intensity of Raman peaks was stronger at higher substrate temperatures. In the experiment, a reduced band gap (1.4 eV) of the AlSb:Zn thin film was observed compared to the undoped AlSb films, which were more suitable for thin-film solar cells. Zn doping could reduce the deliquescent speed of AlSb thin films. The fabricated heterojunction device showed the good rectification behavior, which indicated the PN junction formation. The obvious photovoltaic effect has been observed in an FTO/ZnS/AlSb:Zn/Au device.

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Section: Resultsmentioning

confidence: 96%

The Properties of Zn-Doped AlSb Thin Films Prepared by Pulsed Laser Deposition

Tang

Wang

et al. 2019

Coatings

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“…[ 26 ] AlSb also possesses a cubic crystal with a 5.9588 Å lattice. [ 37 ] Therefore, there is a lattice discrepancy between CTS and AlSb as well. Due to this disparity in lattice between the heterointerfaces, defects of 10 11 cm −2 were used in each heterostructure.…”

Section: Device Architecture and Methodologymentioning

confidence: 99%

Current Remedy in Ultrathin Crystalline Si Solar Cell by Cu₂SnS₃ Thin Film toward High Efficiency

Mondal,

Abir,

Hossain

2024

Energy Tech

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An ultrathin 15 μm wafer‐based c‐Si solar cell is designed and simulated, wherein the current remedy is done by Cu2SnS3 (CTS) thin film. The ZnSe and AlSb are incorporated as window and back surface field (BSF) layers, respectively, in this model. The ultrathin Si‐based n‐ZnSe/p‐Si exhibits the short‐circuit current density of 30.66 mA cm−2 with an efficiency of 18.80%. The inclusion of p+‐CTS thin film as a second absorber layer has enhanced this current to 42.14 mA cm−2. By absorbing sunlight up to 1200 nm, the CTS layer is able to successfully overcome the constraint of thinner Si wafers on longer‐wavelength photon absorption leading to current augmentation. The addition of p++‐AlSb as the BSF layer also boosts the open‐circuit voltage by 300 mV. The rise in VOC is a result of the larger built‐in potential in ZnSe/Si, Si/CTS, and CTS/AlSb interfaces. With enriched current and voltage, the final proposed n‐ZnSe/p‐Si/p+‐CTS/p++‐AlSb heterostructure theoretically records an efficiency of 35.48% in ultrathin Si solar cells. The current compensation obtained using CTS thin film in this work can give optimism about the future of ultrathin Si solar cells.

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Preparation of AlSb film by screen printing and sintering method

Xiao

Yan

Pei

et al. 2019

J Mater Sci: Mater Electron

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Characterization of N-type and P-type Aluminum Antimonides on Si substrates for room-temperature optoelectronic devices

Cited by 5 publications

References 20 publications

The Properties of Zn-Doped AlSb Thin Films Prepared by Pulsed Laser Deposition

The Properties of Zn-Doped AlSb Thin Films Prepared by Pulsed Laser Deposition

Current Remedy in Ultrathin Crystalline Si Solar Cell by Cu₂SnS₃ Thin Film toward High Efficiency

Preparation of AlSb film by screen printing and sintering method

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Characterization of N-type and P-type Aluminum Antimonides on Si substrates for room-temperature optoelectronic devices

Cited by 5 publications

References 20 publications

The Properties of Zn-Doped AlSb Thin Films Prepared by Pulsed Laser Deposition

The Properties of Zn-Doped AlSb Thin Films Prepared by Pulsed Laser Deposition

Current Remedy in Ultrathin Crystalline Si Solar Cell by Cu2SnS3 Thin Film toward High Efficiency

Preparation of AlSb film by screen printing and sintering method

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Product

Resources

About

Current Remedy in Ultrathin Crystalline Si Solar Cell by Cu₂SnS₃ Thin Film toward High Efficiency