To cope with environments with high levels of radiation,
non-silicon semiconductors such as silicon carbide detectors are
being proposed for instrumentation.
4H-SiC diodes for radiation detection have been fabricated in the
IMB-CNM Clean Room, for which different strategies to define the
electrical contact of the implants had been implemented, in an
attempt to optimise the technology for, e.g., medical applications
or low energy radiation detection, as the material choice can affect
the sensitivity of the device. Among these technologies, it is
included an epitaxially-grown graphene layer as part of the
electrical contact.
In this paper, a selection of four configurations of the IMB-CNM SiC
diodes are characterised in terms of radiation detector response.
Photodiode performance under 20 keV X-rays irradiation in the XALOC
beam line at ALBA Synchrotron is presented. Over-responses in the
range of 12–19% linked to the interaction of the radiation with the
metallic layers are observed. A good uniformity response as well as
a good linearity at 0 V bias is reported, even in the under-depleted
devices. This work exemplifies the good performance of SiC
detectors fabricated at IMB-CNM specifically for low-energy X ray
characterization at high X-ray intensities.