Characterization of Ni(Si,Ge) films on epitaxial SiGe(100) formed by microwave annealing

Hu, Chaoying; Xu, Peng; Fu, Cuiping; Zhu, Zhiwei; Gao, Xindong; Jamshidi, Asghar; Noroozi, Mohammad; Radamson, Henry H.; Wu, Depei; Zhang, Shi-Li

doi:10.1063/1.4748111

Cited by 31 publications

(26 citation statements)

References 13 publications

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“…MWA is a process that heats materials by bombarding it with electromagnetic radiation in the microwave spectrum, causing polarized molecules in the material to rotate and build up thermal energy. The most important purpose of the low-energy MWA process is to effectively repair destroyed lattices and to activate the dopant-ions without dopant diffusion [4][5][6][7]. The heating level of MWA energy is lower than traditional heating levels.…”

Section: Introductionmentioning

confidence: 99%

Study on Ultra Shallow Junction n-MOS with 350°C Microwave Annealing for Activation of Phosphorus Dopants in Germanium

Shih¹

2017

JEEE

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Abstract:In this study, low-energy microwave annealing is used to fabricate ultra-shallow junctions for less than 20 nm IC node applications in a potential material: Germanium (Ge). Germanium is a new promising material and might replace silicon in the future. A novel microwave annealing technique with two steps for the solid phase epitaxial recrystallization (SPER) and phosphorus dopants activation was applied to Germanium. The purpose of the first step, microwave annealing of 1.2 kW for 75 s, is to re-grow the amorphous layer and repair the destroyed crystal lattices caused by ion implantation. In the second-step of annealing, low-energy microwave, 0.9 kW (≈350°C) for 300 s, is used to activate the phosphorus dopants effectively without diffusion and de-activation. The target dopant activation concentration level will achieve 10 20 cm -3. The sheet resistance will decrease to 78 ohm/sq. The low resistance after activating is reflected to the performance of the n-MOS device fabricated by the Ge substrate. The S. S. factor is 900 mV/dec, and the I on/off ratio rise to 2.6×101 . This has demonstrated that the two-step MWA has excellent control, significantly regarding leakage current.

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Section: Introductionmentioning

confidence: 99%

Study on Ultra Shallow Junction n-MOS with 350°C Microwave Annealing for Activation of Phosphorus Dopants in Germanium

Shih¹

2017

JEEE

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“…Some novel solutions e.g., co-implantation, cryogenic implantation or Cluster implant were developed to reduce the dopant's diffusion in the substrate during activation step [102][103][104][105][106]. For co-implantation, carbon was proved to be an appropriate species with good control of dopant diffusion in both silicon or germanium based transistors [107,108].…”

Section: Dopant Implantation In Cmosmentioning

confidence: 99%

The Challenges of Advanced CMOS Process from 2D to 3D

Radamson

Zhang

et al. 2017

Applied Sciences

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Abstract:The architecture, size and density of metal oxide field effect transistors (MOSFETs) as unit bricks in integrated circuits (ICs) have constantly changed during the past five decades. The driving force for such scientific and technological development is to reduce the production price, power consumption and faster carrier transport in the transistor channel. Therefore, many challenges and difficulties have been merged in the processing of transistors which have to be dealed and solved. This article highlights the transition from 2D planar MOSFETs to 3D fin field effective transistors (FinFETs) and then presents how the process flow faces different technological challenges. The discussions contain nano-scaled patterning and process issues related to gate and (source/drain) S/D formation as well as integration of III-V materials for high carrier mobility in channel for future FinFETs.

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“…In the case of implantation at room temperature(RT), an amorphous layer(a-layer) extending about 35 nm from the surface of the specimen as shown in figure 2(a). It is known that avoiding amorphization by increasing the implantation temperature results in higher dopant activation in III-V compound semiconductors [8].…”

Section: Effect Of Ion Implantation Temperaturementioning

confidence: 99%

Studies on Activation of High-Mobility III-V Group Semiconductor Materials by Using Microwave Annealing

Shih¹,

Lee²

2017

IJMSA

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Abstract:As semiconductors devices scale down, silicon transistors would reach its limitation below 10 nm. Researching for the novel materials, which could replace silicon, is important. In this study, the new potential materials III-V Group compound semiconductors which are ion implanted with low energy and low dose. In order to keep the ultra-shallow junction and get the best activation, the new annealing technology ─ microwave annealing (MWA) is employed. Microwave annealing is a processing with low energy and longer period. In contrast to the conventional high thermal annealing methods such as rapid thermal annealing (RTA), it is a process with high temperature and ultra-short time. However, the high temperature could cause the dopants diffusion and the ultra-short time might make the destroyed lattices repaired not completely. Ion implant with silicon at different temperature (80°C, and 150°C) into In 0.47 Ga 0.53 As(300 nm)/InP substrate, and annealed by low-energy MWA and traditional RTA, respectively to research SPER and electrical activation. By using Raman spectrum, we discover that using MWA energy 2.5P(1.5kW) for 100 s could make the III-V materials achieve SPER by repairing fully. From TEM images, the amorphous layer caused by ion implantation could be recovered to crystal lattices during implantation temperature at 150°C. After annealing by MWA 2.5P(1.5kW) for 100 s, the defects of stacking faults are repaired completely to attain SPER, and it can correspond the Raman results. By using SIMS analysis, it can demonstrate that MWA has better ability to control dopants diffusion. Finally, by using Photoluminescence spectroscopy analysis, the MWA energy 3P(1.8kW) for 100 s could just make silicon dopants get activation. After annealing by MWA 3.5P(2.1kW) for 100 s of implantation at 150°C has the best activation that it has the highest peak.

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Characterization of Ni(Si,Ge) films on epitaxial SiGe(100) formed by microwave annealing

Cited by 31 publications

References 13 publications

Study on Ultra Shallow Junction n-MOS with 350°C Microwave Annealing for Activation of Phosphorus Dopants in Germanium

Study on Ultra Shallow Junction n-MOS with 350°C Microwave Annealing for Activation of Phosphorus Dopants in Germanium

The Challenges of Advanced CMOS Process from 2D to 3D

Studies on Activation of High-Mobility III-V Group Semiconductor Materials by Using Microwave Annealing

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