Characterization of optical and crystal qualities in InxGa1–xN/InyGa1–yN multi-quantum wells grown by MOCVD

Investigation of microstructure and V-defect formation in InxGa1−xN/GaN MQW grown using temperature-gradient metalorganic chemical vapor deposition

“…In order to compromise between these two extreme requirements, the growth temperatures for In x Ga 1-x N (0 Ͻ x Ͻ1) are chosen between 500°C and 800°C. [7][8][9] The GaN films are known to contain a high density of microstructural defects due to the hetereoepitaxial deposition on lattice mismatched substrates (usually sapphire or SiC). In addition, the difference in the thermal expansion coefficient between the GaN and the foreign substrate facilitates in high defect densities for the layer.…”

Effect of thermal damage on optical and structural properties of In0.08Ga0.92N/In0.02Ga0.98N multi-quantum wells grown by MOCVD

“…Recently, epitaxial growth of III-nitrides has been focused on the improvement of optical and crystal qualities of InGaN multi-quantum wells (MQWs) since they are used as active layers of GaN-based optoelectronic devices such as blue/ green light emitting diodes (LEDs) and violet/blue laser diodes (LDs) [1][2][3]. However, the growth of high-quality InGaN layer by metalorganic chemical vapor deposition (MOCVD) has been a challenging issue due to extensive decomposition of InN at temperature above 500 1C and low cracking efficiency of ammonia (NH 3 ) below 1000 1C [1].…”

Inhomogeneity of InGaN quantum wells in GaN‐based blue laser diodes

“…Therefore, we can guess that the inhomogeniety of InGaN QWs would be quite restricted in deep InGaN QWs of GaN based blue LDs which results in significantly in homogeneities of QWs. 1 Introduction III-nitrides have attracted much attention for optoelectronic device applications whose emission wavelengths ranging from green to ultraviolet light due to their wide band gap [1][2][3]. Especially, GaN based blue-violet laser diodes with emission wavelength of 405 nm have attracted interest as light source for next generation digital versatile disk application.…”

“…In addition to this optical storage application [4,5], GaN based blue LDs for the full color laser displays have also been developed [6]. A lot of research groups have reported the difficulties of high efficiency in the blue/green light emitting InGaN based device by the followings; the significantly high vapor pressure of nitrogen over InGaN and the high volatility of In at a high growth temperature, the increase of non-radiative recombination center as the point defect, and the existence of strain induced piezoelectric field [1][2][3]. Additionally, in order to achieve the longer wavelength, the uniformity of InGaN MQWs is more deteriorated with increasing the In content as well as the number of well in the laser diode structure [7].…”