1998
DOI: 10.1016/s0924-4247(97)01658-0
|View full text |Cite
|
Sign up to set email alerts
|

Characterization of orientation-dependent etching properties of single-crystal silicon: effects of KOH concentration

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

3
165
0
2

Year Published

2000
2000
2021
2021

Publication Types

Select...
5
3

Relationship

1
7

Authors

Journals

citations
Cited by 281 publications
(184 citation statements)
references
References 5 publications
3
165
0
2
Order By: Relevance
“…The etch rate for {100} faces (i.e. the top of the wafer) is 1-2 orders of magnitude faster than for {111} faces, 8,9 resulting a DPO with beveled {111} edges and a bottom face which extends approximately 212µm beyond the top face along all edges.…”
Section: Annealingmentioning
confidence: 99%
“…The etch rate for {100} faces (i.e. the top of the wafer) is 1-2 orders of magnitude faster than for {111} faces, 8,9 resulting a DPO with beveled {111} edges and a bottom face which extends approximately 212µm beyond the top face along all edges.…”
Section: Annealingmentioning
confidence: 99%
“…Wet etching in KOH allows for better selectivity of material removal, since the rate of etching of SiN is negligible [38], however, the rate of silicon removal depends upon the crystallographic properties [42,43]. The {111} family has a much smaller etching rate than other faces, and so should be used for the side-walls of the "trench".…”
Section: Fabrication Of a Resonator With Nanoscale Silicon Nitridmentioning
confidence: 99%
“…For the (110) process, the {311} faces are removed more slowly than the others, apart from {111} [42]. Thus, the process is dependent upon the {311} faces.…”
Section: Fabrication Of a Resonator With Nanoscale Silicon Nitridmentioning
confidence: 99%
“…In order to easily visualize the anisotropy of an etchant, the etch rates values of the different orientations are assigned to different colors and stereographic representations are coloured accordingly. A thorough characterization of KOH and TMAH etchants was performed by Sato et al by etching silicon hemispheres [188,189]. Nevertheless, another method that consists in etching a silicon structure similar to a wagon wheel was used to characterize KOH [190] and it has recently been proved to obtain accurate characterizations for KOH and TMAH [191].…”
Section: Etch Rate Crystallographic Orientation Dependentmentioning
confidence: 99%
“…Nevertheless, the shape of the resulting structures is difficult to predict due to multiple experimental parameters, such as crystallographic orientations [176,191,276,277], composition of etchant solution (e.g. KOH [188,193] or TMAH [177,278]), its concentration and temperature [191,192], and usage of additives (e.g. Triton [175,195] or IPA [193,194]).…”
Section: Introduction and Drawbacks Of Previous Wet Etching Simulatorsmentioning
confidence: 99%