2014
DOI: 10.1016/j.mssp.2013.12.006
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Characterization of p-AlxGa1−xAs/p-GaAs structure studied by surface photovoltage in metal–insulator–semiconductor configuration

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Cited by 4 publications
(1 citation statement)
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“…Among various elements of semiconductor NCs, silicon (Si) NCs are recently investigated intensively because of the high compatibility to the complementary metal-oxide semiconductor (CMOS) technology. 9,[18][19][20][21][22] We have recently developed a colloidal Si NC having heavily boron (B) and phosphorus (P) codoped shells. [23][24][25][26][27][28] The codoped Si NC is dispersible in polar solvents without organic ligands because of a negative electrostatic potential induced on the surface.…”
Section: Methodsmentioning
confidence: 99%
“…Among various elements of semiconductor NCs, silicon (Si) NCs are recently investigated intensively because of the high compatibility to the complementary metal-oxide semiconductor (CMOS) technology. 9,[18][19][20][21][22] We have recently developed a colloidal Si NC having heavily boron (B) and phosphorus (P) codoped shells. [23][24][25][26][27][28] The codoped Si NC is dispersible in polar solvents without organic ligands because of a negative electrostatic potential induced on the surface.…”
Section: Methodsmentioning
confidence: 99%