Characterization of PbxMn1−xS thin films prepared by flash evaporation technique

Swain, P. K.; Sehgal, H.K.

doi:10.1016/s0040-6090(96)08554-9

Cited by 4 publications

(5 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…CBD is a technique in which thin films are deposited on a substrate immersed in dilute solutions containing metal ions and sulfide or selenide ions, the starting chemical are commonly available and cheap, low temperature deposition avoids oxidation and corrosion of metallic substrates . Structural, optical, and electrical investigation of Pb 1−x Mn x S thin films deposited by flash evaporation technique indicates the applicability of this material for IR detectors and other optoelectronic devices . But so far no detailed work has been reported on the influence of lead on the properties of MnS thin film by CBD method.…”

Section: Introductionmentioning

confidence: 99%

“…[18] Structural, optical, and electrical investigation of Pb 1−x Mn x S thin films deposited by flash evaporation technique indicates the applicability of this material for IR detectors and other optoelectronic devices. [21] But so far no detailed work has been reported on the influence of lead on the properties of MnS thin film by CBD method. In this paper, CBD has been carried out to prepare Pb x 2 CS] as a source of sulfar ions (S 2− ), and ammonia (NH 3 ) solution acts as a buffer solution.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Synthesis and Characterization of Pb‐Doped MnS Thin Films

Sonavane¹,

Jare²,

Shaikh³

et al. 2019

Macromolecular Symposia

View full text Add to dashboard Cite

Pure and Pb‐doped MnS thin films are prepared by chemical bath deposition (CBD) method onto glass substrates at 60 °C temperature. The films are characterized by X‐ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X‐ray analysis, and optical absorption spectroscopy. The particle size of the crystalline is determined from the XRD patterns using Scherrer formula and is 47 nm for MnS thin films. The particle size shows a change in the case of the Pb‐doped film. The optical band gap of MnS thin film is found to be 3.1 eV, which decreases on doping with Pb. SEM graphs of doping of Pb in MnS confirmed the formation of spherical superstructure and indicate that the Pb2+ is successfully substituted into the MnS host structure of the Mn2+ site.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Synthesis and Characterization of Pb‐Doped MnS Thin Films

Sonavane¹,

Jare²,

Shaikh³

et al. 2019

Macromolecular Symposia

View full text Add to dashboard Cite

show abstract

“…PbS, a material of interest with a narrow band gap energy (E g = 0.37 eV) and large excitation Bohr radius of 18 nm, [4][5][6][7] has been alloyed with many other binary sulfides to form variable band gap ternary semiconductors of the type Pb 1−x M x S (M = Cd, Mn, Sr) [8][9][10][11][12] over wide wavelength range. Considering that the band gaps of bulk PbS and bulk CdS are 0.37 and 2.4 eV, respectively, a bulk ternary alloy of the type Cd x Pb 1−x S should show a variation of the band gaps between the limiting values of 0.37 and 2.4 eV.…”

Section: Introductionmentioning

confidence: 99%

Mid-IR band gap engineering of CdxPb1−xS nanocrystals by mechanochemical reaction

Tan

Liu

2014

AIP Advances

View full text Add to dashboard Cite

Composition-tunable ternary CdxPb1−xS nanocrystals (NCs) are very important materials for remote sensing and detecting in the infrared (IR) wavelength region. They are, however, almost exclusively prepared by wet chemical routes which lead to surface-capped nanoparticles. The surface capping molecules could move their absorption peaks from mid-IR to near IR wavelength region. However, surface clean CdxPb1−xS nanocrystals (NCs) would demonstrate intrinsic optical spectrum in the mid-IR region. Herein, we present a physical mechanical alloying (MA) process being applied to prepare tens of grams of surface clean CdxPb1−xS nanocrystals within the composition range of x = 0.0 to 0.4. The average particle size is smaller than 9 nm. The as-milled nanocrystals are chemically homogenous. The CdxPb1−xS nanocrystals show a continuous lattice contraction with Cd content. There is an exponential indirect band gap-composition relationship. This MA method shows the ability to continuously and precisely tune the band gap energies of ternary CdxPb1−xS semiconductor nanocrystals from mid-IR region (2638 nm) to NIR wavelength region (1240 nm) through chemical composition.

show abstract

“…PbS, a material of interest for the present study, has been alloyed with many other binary sulfides to form variable bandgap ternary semiconductors of the type Pb 1−x M x S ͑M = Mn, Sr, Sn, Hg, Zn͒ [7][8][9][10][11][12][13][14] to achieve variation in bandgap over large values. Considering that the bandgaps of PbS ͑bulk͒ and MnS ͑bulk͒ are 0.41 and 3.5 eV, respectively, a bulk ternary alloy of the type Pb 1−x Mn x S should show a variation of the bandgaps between the limiting values of 0.41 and 3.5 eV.…”

mentioning

confidence: 99%

“…The structural, electrical, and optical properties of the flashevaporated polycrystalline Pb 1−x Mn x S ternary films have been studied in the past. 8 To study the behavior of these films in nanodimensions, we made an attempt to grow these films by chemical bath deposition ͑CBD͒. CBD has been successfully used to grow thin films of Pb 1−x Fe x S, 25-27 Pb 1−x Co x S, 28 Pb 1−x Hg x S, [12][13][14] Pb 1−x Cd x S, 29 and Pb 1−x Cu x S. 30 The CBD grown Pb 1−x Mn x S nanoparticles films were studied for the dependence of their structural, optical, and electrical properties on the Mn content in present investigation.…”

mentioning

confidence: 99%

Study of Solution Grown Variable BandGap Pb[sub 1−x]Mn[sub x]S Semiconductor Nanoparticle Films

Joshi

Kumar

Sehgal

et al. 2006

J. Electrochem. Soc.

View full text Add to dashboard Cite

Single-phase Pb 1−x Mn x S ͑0.03 Յ x Յ 0.37͒ nanoparticle films were prepared using an electroless solution growth technique. Face centered cubic structure with a decrease of lattice parameter for an increase of x in the alloy films was observed. Composition dependence of optical and electrical properties is discussed. The optical bandgap ͑E g ͒ could be varied from 1.50 to 2.50 eV by changing the x in the range 0.03 Յ x Յ 0.37 for the films. Effect of the grain size and the effect of alloying on optical properties are distinguished for the ternary nanoparticle films. Variable range hopping has been identified as mechanism for conduction in the p-type semiconductor Pb 1−x Mn x S nanoparticle films. Mobility ͑ of the majority carriers shows a decrease with increase in Mn concentration x and follows a T −0.4 temperature dependence, indicating the surface scattering of carriers in the nanoparticle films.Utility of a semiconductor can be enhanced by modifying its characteristics as per requirement. Ternary alloys prepared out of binary semiconductors provide a class of semiconductors in which the lattice parameter, energy bandgap, and other operational parameters could be continuously varied within specified limits by alloying appropriate binary constituents with changes in their relative concentrations. 1-5 There has been growing interest in tailoring the properties of semiconductors and, therefore, various semiconducting materials were developed, studied, and utilized for variety of applications. 6 Criteria for the selection of binaries involve their operational characteristics and compatibility in chemical bonding and the crystal structure. Effect of compositional disorder in these ternary crystalline materials on tailoring of states into the forbidden gap is so small that, in general, these materials behave as homogeneous uniphase semiconductors. These considerations make the ternary semiconductors interesting and desirable candidates for device applications.PbS, a material of interest for the present study, has been alloyed with many other binary sulfides to form variable bandgap ternary semiconductors of the type Pb 1−x M x S ͑M = Mn, Sr, Sn, Hg, Zn͒ 7-14 to achieve variation in bandgap over large values. Considering that the bandgaps of PbS ͑bulk͒ and MnS ͑bulk͒ are 0.41 and 3.5 eV, respectively, a bulk ternary alloy of the type Pb 1−x Mn x S should show a variation of the bandgaps between the limiting values of 0.41 and 3.5 eV. Considering the fact that for maximizing the utility of the ternary system, the thin film route is the most obvious and that the grain size in the polycrystalline film is strongly dependent on growth procedure and conditions, a variety of options related to semiconducting properties of the material in thin film form become possible.Recent investigations 15-23 indicated that the reduction of particle size of semiconductors below their Bohr exciton radius has a profound effect on optical, electrical, and structural properties of materials. For example, the nanoparticles of PbS show an in...

show abstract

Characterization of PbxMn1−xS thin films prepared by flash evaporation technique

Cited by 4 publications

References 11 publications

Synthesis and Characterization of Pb‐Doped MnS Thin Films

Synthesis and Characterization of Pb‐Doped MnS Thin Films

Mid-IR band gap engineering of CdxPb1−xS nanocrystals by mechanochemical reaction

Study of Solution Grown Variable BandGap Pb[sub 1−x]Mn[sub x]S Semiconductor Nanoparticle Films

Contact Info

Product

Resources

About