Characterization of PCB Embedded Package Materials for SiC MOSFETs

Hou, Fengze; Wang, Wenbo; Lin, Tingyu; Cao, Liqiang; Zhang, G. Q.; Ferreira, J.A.

doi:10.1109/tcpmt.2019.2904533

Cited by 21 publications

(13 citation statements)

References 25 publications

(25 reference statements)

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“…This loss is proportional to the switching frequency. The consideration of the cooling design for these components is an important issue mentioned in this study [24,25].…”

Section: Methodsmentioning

confidence: 99%

Design of a High-Power Multilevel Sinusoidal Signal and High-Frequency Excitation Module Based on FPGA for HIFU Systems

et al. 2021

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High-intensity focused ultrasound (HIFU) is a noninvasive therapy that uses focused ultrasound to treat a part of the tissue; high temperatures can damage tissues by heat. HIFU has many applications in the field of surgery and aesthetics and is used increasingly in everyday life. In this article, we discuss the mainboard design that controls the HIFU system with the ability to create a multistep sine wave compatible with many different applications. The signal used to trigger the transducer is a sinusoidal signal with a frequency adjustable from 0.1 to 3 MHz. In addition, the power supplied to the HIFU transducer is also controlled easily by the configuration parameters installed in the control circuit board. The proposed control and design method generates a voltage signal that doubles the supply voltage, thereby reducing the current on the MOSFET. The hardware design is optimized for a surface-mounted device-type MOSFET without the need for an external heat sink. In tests, we conducted a harmonious combination of two output signals to activate the same HIFU probe. The results showed that the energy transferred to the HIFU transducer increased by 1.5 times compared to a single channel. This means that the HIFU treatment time is reduced when using this method, with absolutely no changes in the system structure.

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“…This loss is proportional to the switching frequency. The consideration of the cooling design for these components is an important issue mentioned in this study [24,25].…”

Section: Methodsmentioning

confidence: 99%

Design of a High-Power Multilevel Sinusoidal Signal and High-Frequency Excitation Module Based on FPGA for HIFU Systems

et al. 2021

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“…Besides, proper thermal-mechanical and dielectric performance are necessary. A study from the Delft University of Technology proposed that bismaleimide-triazine (BT) for embedding materials is a good selection for embedding material [91], [102]. BT is characterized to have a high Tg as 260℃ and a matched CTE of 5.3×10 -6 /℃.…”

Section: B Pcb Embedded Technologymentioning

confidence: 99%

“…In this way, different packaging technologies can easily be combined and compensate for each other's limitations to better meet the requirements of future automotive applications. For example, in [90] and [102], the designs have the features of both a 3D package and a PCB embedded package. While in [90], the module integrated the gate driver and other components.…”

Section: High Complexity 3d Packagingmentioning

confidence: 99%

Automotive Power Module Packaging: Current Status and Future Trends

et al. 2020

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Semiconductor power modules are core components of power electronics in electrified vehicles. Packaging technology often has a critical impact on module performance and reliability. This paper presents a comprehensive review of the automotive power module packaging technologies. The first part of this paper discusses the driving factors of packaging technology development. In the second section, the design considerations and a primary design process of module packaging are summarized. Besides, major packaging components, such as semiconductor dies, substrates, and die bonding, are introduced based on the conventional packaging structure. Next, technical details and innovative features of state-of-the-art automotive power modules from major suppliers and original equipment manufacturers are reviewed. Most of these modules have been applied in commercial vehicles. In the fourth part, the system integration concept, printed circuit board embedded packaging, three-dimensional packaging, press pack packaging, and advanced materials are categorized as promising trends for automotive applications. The advantages and drawbacks of these trends are discussed, and it is concluded that a preferable overall performance could be achieved by combining multiple technologies. INDEX TERMS Electric vehicles, power electronics, semiconductor device packaging TABLE I PRIMARY DESIGN CONSIDERATIONS OF MODULE PACKAGING Design considerations Details Size Volume, weight, power density, energy density. Electrical performance Current rating, voltage rating, switching frequency range, power loss, electrical insulation, electromagnetic interference (EMI). Thermal management Temperature distribution, thermal resistance (Rth), heat capacity, coefficient of thermal expansion (CTE). Mechanical strength Thermal stress distribution, material properties (Tensile strength, flexural strength, peel strength, etc.), external shock and vibration. Reliability and fatigue Joints failure, crack propagation, delamination, lifetime under temperature and power cycling. Manufacturability and assembly Manufacture procedure, process temperature and pressure, external connections.

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“…In order to obtain the BT laminate with almost the same thickness as the SiC die, BT prepreg was used. In our previous work [27], characterization of the PCB-embedded package materials for SiC MOSFETs were performed. The experimental results showed that the PCB-embedded materials could withstand high temperatures beyond 200 • C and high voltages above 1200 V. Tg was as high as over 260 • C and CTE matched well with SiC.…”

Section: B Packaging Materialsmentioning

confidence: 99%

Fan-Out Panel-Level PCB-Embedded SiC Power MOSFETs Packaging

Hou

Wang²,

Chen

et al. 2020

IEEE J. Emerg. Sel. Topics Power Electron.

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In this article, a novel fan-out panel-level printed circuit board (PCB)-embedded package for phase-leg silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module is presented. Electro-thermomechanical co-design was conducted, and the maximum package parasitic inductance was found to be about 1.24 nH at 100 kHz. Compared with wire-bonded packages, the parasitic inductances of the PCB-embedded package decreased at least by 87.6%. Compared with blind via structure, the thermal resistance of the proposed blind block structure reduced at most by about 26%, and the stress of the SiC MOSFETs decreased by about 45.2%. Then, a novel PCB-embedded packaging process was developed, and three key packaging processes were analyzed. Furthermore, effect of PCB-embedded package on static characterization of SiC MOSFET was analyzed, and it was found that: 1) Output current of PCB-embedded package was decreased under a certain gate-source voltage compared to SiC die; 2) Miller capacitance of SiC MOSFET was increased thanks to parasitic capacitance induced by package; and 3) compared with SiC die, nonflat miller plateau of the PCB-embedded package extends, and as drain-source voltage increases, the nonflat miller plateau extends. Lastly, switching characteristics of the PCB-embedded package and TO-247 package were compared. The results show that the PCB-embedded package has smaller parasitic inductances.

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Characterization of PCB Embedded Package Materials for SiC MOSFETs

Cited by 21 publications

References 25 publications

Design of a High-Power Multilevel Sinusoidal Signal and High-Frequency Excitation Module Based on FPGA for HIFU Systems

Design of a High-Power Multilevel Sinusoidal Signal and High-Frequency Excitation Module Based on FPGA for HIFU Systems

Automotive Power Module Packaging: Current Status and Future Trends

Fan-Out Panel-Level PCB-Embedded SiC Power MOSFETs Packaging

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