Characterization of phosphorus implantation in 4H-SiC

Khemka, V.; Patel, R. N.; Ramungul, N.; Chow, T. Paul; Ghezzo, M.; Kretchmer, J.

doi:10.1007/s11664-999-0008-z

Cited by 52 publications

(17 citation statements)

References 12 publications

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“…However, recent published data show that phosphorus implantation can yield sheet resistances of 200 Ω/s s or less, more than a factor of two reduction from the value listed above for nitrogen. 11,12 The objective of this article is to explore the use of implanted phosphorus as a donor for 4H-SiC, and to determine how easily phosphorus implantation technology can be incorporated into a process flow for 4H-SiC metal-oxide-semiconductor devices. To accomplish this objective, the time-dependent variation of the sheet resistance for phosphorus implanted 4H-SiC materials, annealed at four temperatures, is investigated.…”

Section: Introductionmentioning

confidence: 99%

Phosphorus implantation into 4H-silicon carbide

Capano

Santhakumar

Venugopal

et al. 2000

J. Electron. Mater.

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Section: Introductionmentioning

confidence: 99%

Phosphorus implantation into 4H-silicon carbide

Capano

Santhakumar

Venugopal

et al. 2000

J. Electron. Mater.

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“…Nitrogen, phosphorus, arsenic, and antimony are the possible donors in SiC, with comparable ionization energies. [11][12][13] The purpose of this study is to thoroughly investigate the relationship between P-doping concentration and its activa-tion in SiC over a wide implant doping concentration range. At high doping concentrations (Ͼ3ϫ10 19 cm Ϫ3 ) the electrical activation of N donors is poor, 7-11 raising the minimum sheet resistance of the contact regions of high-power and high-frequency devices, limiting the optimum device performance.…”

Section: Introductionmentioning

confidence: 99%

“…5,6 Nitrogen is widely used because of the versatility associated with its low atomic mass. [11][12][13][14][15][16][17] However, complex semiconductor devices require a range of doping levels. High residual implant damage, resulting from large ion mass, and low solid solubility limits yield high sheet resistances for As and Sb.…”

Section: Introductionmentioning

confidence: 99%

Variable-dose (1017–1020 cm−3) phosphorus ion implantation into 4H–SiC

Handy

Rao

Holland

et al. 2000

Journal of Applied Physics

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Articles you may be interested inFluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H-SiC J. Appl. Phys. 97, 033513 (2005); 10.1063/1.1844618 Damage evolution and recovery on both Si and C sublattices in Al-implanted 4H-SiC studied by Rutherford backscattering spectroscopy and nuclear reaction analysis J. Appl. Phys. 91, 6388 (2002); 10.1063/1.1469204 High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes Comparison of the annealing behavior of high-dose nitrogen-, aluminum-, and boron-implanted 4H-SiC Appl.Multiple-energy box profile elevated-temperature ͑700°C͒ phosphorus ion implantations were performed into 4H-SiC in the doping range of 1ϫ10 17 -1ϫ10 20 cm Ϫ3 . The implanted material was annealed at 1500, 1600, or 1650°C with an AIN encapsulant to prevent degradation of the SiC surface. Within this temperature range the sheet resistance does not change significantly for a given dose. The percentage of electrical activation of the P donors initially decreased with increasing implant dose for P-implant concentration up to 3ϫ10 19 cm Ϫ3 and then increased again at higher doses. For 1ϫ10 20 cm Ϫ3 P implant, a carrier concentration of 4ϫ10 19 cm Ϫ3 was measured at room temperature. In the 10 17 cm Ϫ3 P doping concentration range substitutional activation greater than 85% was measured. Despite performing the implants at 700°C, a significant amount of as-implanted damage was observed in the Rutherford backscattering ͑RBS͒ spectrum, even for 10 18 cm Ϫ3 range P implantations. The RBS yield after annealing is near the virgin level for P concentrations up to 1ϫ10 19 cm Ϫ3 , but above this concentration the RBS yield is above the virgin level, indicating a significant amount of residual lattice damage in the crystal.

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“…19,20 The source/drain implant species do not have any impact on MOSFETs made with long channel length (30-100 µm) but in practical devices with short channel length, 3-6 the source/drain series resistance may affect the device characteristics. Phosphorus has been shown to achieve a lower sheet resistance in n + implanted layers compared to nitrogen.…”

Section: Fabrication Proceduresmentioning

confidence: 99%