Characterization of Pt/Bi3.15Nd0.85Ti3O12/HfO2/Si structure using a hafnium oxide as buffer layer for ferroelectric-gate field effect transistors

Xie, Dan; Luo, Yafeng; Han, Xing; Ren, Tian‐Ling; Liu, Litian

doi:10.1063/1.3267153

Cited by 13 publications

(6 citation statements)

References 19 publications

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“…Moreover, the surface roughness of the lm deposited on Pt substrate is larger than that on Si substrate, this phenomenon is attributed to the lattice mismatch. 17,18 Because the BNT lm and Si substrate have similar lattice parameters (about 0.5 nm), but lattice parameter of Pt substrate is about 0.39 nm. In addition, the root-meansquare (RMS) roughness of the 13 nm thick BNT lm is about 0.55 nm.…”

Section: Resultsmentioning

confidence: 99%

Size effect on the ultrathin ferroelectric film directly grown on silicon for electronic devices

et al. 2013

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We demonstrate that the size effects impact on the electrical properties of the ultrathin Bi 3.15 Nd 0.85 Ti 3 O 12 (BNT) film grown directly on silicon. The remnant polarization is observed for the 2 nm thick BNT film by direct quantitative P-V measurements and the corresponding obvious contrast images are confirmed by scanning probe microscopy. We address the physical mechanism of the ferroelectric behavior of the ultrathin films deposited on Si substrates which is different from those grown on the metal and oxide substrates. Moreover, the results also reveal low leakage current, good fatigue and retention characteristics. This opens the way for the ultrathin ferroelectric films directly grown on Si substrates for Si-based integrated microelectronics while they still retain excellent electrical properties. In addition, we also discuss the possible microcosmic mechanism of the performance of the ultrathin film integrated with current Si technology in electronic miniaturization devices.

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Section: Resultsmentioning

confidence: 99%

Size effect on the ultrathin ferroelectric film directly grown on silicon for electronic devices

et al. 2013

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“…Bi 4 Ti 3 O 12 (BIT)-based layered ferroelectric thin films have always been one of the most potential ferroelectric materials to replace the commercial (Pb, Zr)TiO 3 (PZT)-based ferroelectric random access memory (FRAM) for its high curie temperature, large remanent polarization, and good anti-fatigue properties [1–3]. The lattice constants of BIT crystal along the c -axis, a -axis, and b -axis were 3.284 nm, 0.544 nm, and 0.541 nm at 300 K, respectively.…”

Section: Introductionmentioning

confidence: 99%

Effect of orientation on polarization switching and fatigue of Bi3.15Nd0.85Ti2.99Mn0.01O12 thin films at both low and elevated temperatures

et al. 2019

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Bi 3.15 Nd 0.85 Ti 2.99 Mn 0.01 O 12 (BNTM) thin films with (200)-orientations, (117)-orientations, and mixed-orientations were prepared by sol-gel methods. The influence of orientations on polarization fatigue behaviors of BNTM thin films were systematically investigated at both low and elevated temperatures. It was found that the changed trends of the polarization fatigue of (200)-oriented and (117)-oriented BNTM thin films at elevated temperatures were opposite. The fatigue properties become exacerbated for the (200)-oriented ones and become improved for the (117)-oriented ones, while the reduction of remanent polarization first decreases and then increases for the mixed-oriented ones. It can be assumed that the different roles played by domain walls and interface layer with increasing T in these thin films have caused such differences, which was certified by the lower activation energies (0.12–0.13 eV) of (200)-oriented BNTM thin films compared to those of BNTM thin films (0.17–0.31 eV) with other orientations through the temperature-dependent impedance spectra analysis. With the aid of piezoresponse force microscopy (PFM), the non-neutral tail-to-tail or head-to-head polarization configurations with greater probabilities for (117)-oriented and mixed-oriented thin films were found, while a majority of the neutral head-to-tail polarization configurations can be observed for (200)-oriented ones.

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“…The Bi 4 Ti 3 O 12 (BIT)-based layered ferroelectric thin film has always been one of ferroelectric materials with the most potential to replace the commercial (Pb,Zr)TiO 3 (PZT)-based ferroelectric random access memory (FRAM) for its high curie temperature, large remnant polarization, and good anti-fatigue properties [1,2,3]. Until now, many works on Nd-substituted BIT thin films, such as Bi 3.15 Nd 0.85 Ti 3 O 12 (BNT) thin films have been carried out [2,3,4]. Large remnant polarization ( P r ) and imprinting, and fatigue-free characteristics have been observed in these thin films.…”

Section: Introductionmentioning

confidence: 99%

Temperature-Dependent Domain Dynamics and Electrical Properties of Nd-doped Bi4Ti2.99Mn0.01O12 Thin Films in Fatigue Process

et al. 2018

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Bi4Ti2.99Mn0.01O12 (BTM) thin films with different ratio of neodymium (Nd) doping were prepared on Pt(111)/Ti/SiO2/Si(100) substrates through a sol-gel method. The effects of Nd doping on domain dynamics and temperature-dependent fatigue behaviors of BTM thin films were systematically studied. The polarization fatigues of BTM (not doped) and Bi3.5Nd0.5Ti2.99Mn0.01O12 (BNTM05) thin films first get better with the increasing temperature (T) from 300 to 350 K and then become worse from 350 to 400 K, while Bi3.15Nd0.85Ti2.99Mn0.01O12 (BNTM85) thin films show enhanced fatigue endurance from 300 to 400 K. It can be shown that the long-range diffusion of oxygen vacancies in BTM thin film happens more easily through the impedance spectra analysis with T from 300 to 475 K, which can be verified by a lower activation energies (0.13–0.14 eV) compared to those of BNTM05 and BNTM85 (0.17–0.21 eV). Using a temperature-dependent piezoresponse force microscopy (PFM), we have found more responsive domain fragments in Nd-substituted films. The microscopic domain evolution from 298 to 448 K was done to further explain that the domain wall unpinning effect has been enhanced with increasing T. The correlation between microscopic domain dynamics and macroscopic electrical properties clearly demonstrates the effects of charged domain wall in Nd-doped BTM thin films during the fatigue tests.

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Characterization of Pt/Bi3.15Nd0.85Ti3O12/HfO2/Si structure using a hafnium oxide as buffer layer for ferroelectric-gate field effect transistors

Cited by 13 publications

References 19 publications

Size effect on the ultrathin ferroelectric film directly grown on silicon for electronic devices

Size effect on the ultrathin ferroelectric film directly grown on silicon for electronic devices

Effect of orientation on polarization switching and fatigue of Bi3.15Nd0.85Ti2.99Mn0.01O12 thin films at both low and elevated temperatures

Temperature-Dependent Domain Dynamics and Electrical Properties of Nd-doped Bi4Ti2.99Mn0.01O12 Thin Films in Fatigue Process

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