Adsorption of 3,4,9,10-perylenetetracarboxylic
dianhydride (PTCDA)
on the Ge(001) surface was studied using scanning tunneling microscopy
(STM), scanning tunneling spectroscopy (STS), and the density-functional
theory (DFT) calculations. Only single adsorption configuration of
the PTCDA molecule was observed at low coverages on the Ge(001) at
room temperature, unlike on the Si(001) where several adsorption configurations
were reported. This indicates that the PTCDA molecules on the Ge(001)
were more mobile than those on the Si(001). Atomic structure of the
adsorption configuration on the Ge(001) was determined by comparison
between the STM experiments and the DFT calculations. Bias-dependent
STM images, STS, and calculated projected density of state curves
show nontrivial hybridization of molecular orbitals with surface states
of the Ge substrate. Interactions of the PTCDA molecule with the Ge
and the Si surfaces were in detail analyzed by the DFT calculation,
considering five main competing contributions to the adsorption energy:
formation energy of polar covalent Ge–O (Si–O) bonds,
energy of molecular deformation, interaction energy of Ge atoms with
the perylene core of PTCDA, energy of dimer buckling deformation,
and van der Waals interaction energy. The analysis explains different
adsorption behaviors between the Ge and the Si substrates.