Characterization of Radiation Damage by Transmission Electron Microscopy

Jenkins, M. L.; Kirk, Marquis A.

doi:10.1887/075030748x

Cited by 141 publications

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“…They appeared as white dots surrounded by a dark Fresnel fringe in underfocused images, and as dark dots surrounded by a bright Fresnel fringe in overfo cused images [17]. This is illustrated in Fig.…”

Section: Tempered Ods/fe12cr and Reference Fe12cr Alloysmentioning

confidence: 78%

Microstructural characterization of Y2O3 ODS–Fe–Cr model alloys

Castro

Muñóz

Monge

et al. 2009

Journal of Nuclear Materials

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Abstract:Two Fe 12 wt% Cr alloys, one containing 0.4 wt% Y 2 O 3 and the other Y 2 O 3 free, have been produced by mechanical alloying followed by hot isostatic pressing. These oxide dispersion strengthened and refer ence alloys were characterized both in the as HIPed state and after tempering by transmission electron microscopy and atom probe tomography. The as HIPed alloys exhibited the characteristic microstructure of lath martensite and contained a high density of dislocations. Small voids with sizes <10 nm were also observed. Both alloys also contained M 3 C and M 23 C 6 carbides (M Cr, Fe) probably as a result of C ingress during milling. After tempering at 1023 K for 4 h the microstructures had partially recovered. In the recovered regions, martensite laths were replaced by equiaxed grains in which M 23 C 6 carbides decorated the grain boundaries. In the ODS alloy nanoparticles containing Y were commonly observed within grains, although they were also present at grain boundaries and adjacent to large carbides.

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Section: Tempered Ods/fe12cr and Reference Fe12cr Alloysmentioning

confidence: 78%

Microstructural characterization of Y2O3 ODS–Fe–Cr model alloys

Castro

Muñóz

Monge

et al. 2009

Journal of Nuclear Materials

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“…In order to characterise the damaged structure, we used a FEI Tecnai T20 with LaB 6 crystal and an FEI Titan G2 80-200 aberration-corrected S/TEM with an X-FEG and ChemiSTEM TM technology [24], both microscopes operating at 200kV. The thickness of the disc area studied by TEM was derived from the fringes spacing of the convergent beam electron diffraction pattern, the interstitial or vacancy nature of the defects using the inside-outside method, and the Burgers vector from the g.b=0 invisibility criterion [25,26]. Vickers hardness measurements were taken using a load of 0.025g, resulting in an indentation depth of 8μm, which is close to the 60% of the Bragg peak position from the irradiated sample surface.…”

Section: ) Direct Comparison With the Results Of Neutron-irradiatiomentioning

confidence: 99%

Monolayer-thick TiO precipitation in V-4Cr-4Ti alloy induced by proton irradiation

et al. 2017

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We have characterised to atomic resolution the mono-layer thick TiO-type precipitate induced by proton irradiation in V-4Cr-4Ti alloy at the coarsening radiation-induced interstitial a/2⟨111⟩ dislocation loops expected to exert a minimal effect on the precipitate formation. This monolayer-thick precipitate constitutes an early stage in the radiationinduced aging process of V-4Cr-4Ti at low temperatures, and can potentially absorb additional light elements in reactor environments. 1Moor Row, November 24, 2016 Dear Prof. Beyerlein, Please find attached the resubmitted manuscript SMM-16-1716 entitled 'Monolayer-thick TiO precipitation in V-4Cr-4Ti alloy induced by proton irradiation' which has been significantly revised on the basis of the comments received by the reviewers.The detailed response to the reviewers' comments, together with the revised version of the manuscript, is attached. We would like to thank the reviewers for their time and effort in appraising the manuscript. The comments received were pertinent and helpful in improving the manuscript. All the points raised have been addressed and the manuscript has been amended accordingly. We believe that the revisions made adequately address the points raised and should therefore present no further obstacle to publication. We thank the reviewers for carefully reading the manuscript and the useful comments. We have addressed all those comments, which we feel have improved the article's quality.Detailed response:1.) In figure 2, images for SA and SACW irradiated at 350C are necessary for better understanding of temperature effects. We have included additional text in the manuscript about the temperature effect. The novelty and impact of this work lies in the recovery of the CWed structure already at 300°C (Fig. 2) before the formation of monolayer-thick RIPs at 350°C (Fig. 3). 2.) What is the relationship between the observed microstructure and the hardness? For example, for SA irradiated at 300C and 350C, where does the difference in hardening come?We have added some text to clarify the observed hardening behaviour at different temperatures in terms of the observed microstructure. 3.) As the observed RIPs in this study is platelet, the description as "average size" may mislead.We have changed the average size of the monolayer-thick RIPs by their average length. 4.) The description about recovery of the pre-existing dislocation network in SACW is contradicting in page 6 and page 7.We have clarified the contradiction in page 6 and 7. 5.) Direct comparison with the results of neutron-irradiation might be difficult since the damage rate is exceedingly large.We have added some text about the difference in dose rate and particle fluence between neutron and proton irradiation. The formation and evolution of a/2 ⟨111⟩ unfaulted dislocation loops in our proton irradiated samples correspond to the observations reported in neutron-irradiated material. However the average loop size at 350C in the proton irradiated samples (85nm) is lower than the value repo...

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Section: Transmission Electron Microscopymentioning

confidence: 99%

“…By establishing two non-parallel diffraction vectors for which the g.b = 0 condition exists, it is possible to identify the habit plane and thus calculate the Burgers vector of a dislocation loop. See references [78][79][80] for further details.In this study the chalcopyrite structure only featured one diffraction vector which was at 90° to the Burgers vector within the confines of sample orientation and available tilt of the TEM sample rod. Therefore, diffraction vectors at 82.2° and 82.5° to the Burgers vector were used as these come close to the ideal 90° angle required for an absolute g.b = 0 condition.…”

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confidence: 99%

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Copper indium diselenide: crystallography and radiation-induced dislocation loops

Hinks

Donnelly

2011

Philosophical Magazine

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Copper indium diselenide (CIS) is a prime candidate for the absorber layer in solar cells for use in extraterrestrial environments due to its good photovoltaic efficiency and ability to resist radiation damage. Whilst CIS-based devices have been tested extensively in the laboratory using electron and proton irradiation, there is still little understanding of the underlying mechanisms which give rise to its radiation hardness. In order to gain better insight into the response of CIS to displacing radiation, transmission electron microscope samples have been irradiated in situ with 400 keV Xe ions at the Intermediate Voltage Electron Microscope facility at Argonne National Laboratory, USA. At room temperature, dislocation loops were observed to form and to grow with increasing fluence. These loops have been investigated using g.b techniques and inside/outside contrast analysis. They were found to reside on {112} planes and to be interstitial in nature. The Burgers vector has been calculated to be b = 1/6 <221>. The compositional content of these interstitial loops was found to be indistinguishable from the surrounding matrix within the sensitivity of the techniques used. To facilitate this work, experimental electron-diffraction zone-axis pattern maps were produced and these are also presented along with analysis of the [100] zone-axis pattern.Keywords: radiation damage; defect analysis; dislocation structures; crystallography; semiconductors; TEM; electron diffraction; ion irradiation; copper indium diselenide; CuInSe 2 ; CIS. IntroductionCopper indium diselenide (CIS) is a chalcopyrite semiconductor with space group ̅ .Along with its derivatives (Cu(In,Ga)Se 2 ), CIS is a prime candidate for the absorber layers in photovoltaic devices for use in extraterrestrial environments due to its good photovoltaic efficiency and its ability to withstand radiation damage. Investigations into radiation damage in these materials have largely concentrated on electron and proton irradiation of thin films and solar cells -particularly to explore the effects on photovoltaic properties . Extraterrestrial testing of CIGS-based devices has also been conducted [29,[36][37][38][39][40][41][42][43] and work using ion irradiation either to explore lattice damage and/or doping has been performed on single crystals and thin films [7,17,21,32,. In particular, work by Mullan et al. using oxygen and neon ions has looked at both electrical and structural effects including transmission electron microscopy (TEM) of ion irradiated samples [17,21,45,46,49,50].In non-irradiated CIS, structural defects have been reported in thin films (stacking faults and microtwins on {112} planes [65][66][67][68], dislocations and dislocation loops [66-70]) and in Bridgman-grown single crystals (dislocations on {110} planes [65]). Ion irradiation has been found to induce microtwins, stacking faults, dislocations, dislocation loops and amorphisation [17,45,46,71].In order to gain an understanding of the atomistic mechanisms which give rise to the radiation hard...

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Characterization of Radiation Damage by Transmission Electron Microscopy

Cited by 141 publications

References 0 publications

Microstructural characterization of Y2O3 ODS–Fe–Cr model alloys

Microstructural characterization of Y2O3 ODS–Fe–Cr model alloys

Monolayer-thick TiO precipitation in V-4Cr-4Ti alloy induced by proton irradiation

Copper indium diselenide: crystallography and radiation-induced dislocation loops

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