Characterization of Ru layer for capping/buffer application in EUVL mask

Kim, Tae Geun; Lee, Seung Yoon; Kim, Chung Yong; Park, In Sung; Kang, In-Yong; Lee, Nae‐Eung; Chung, Yong‐Chae; Ahn, Jinho

doi:10.1016/j.mee.2006.01.125

Cited by 16 publications

(4 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…TaN is a strong candidate for an absorber material owing to its high absorption in the EUV wavelength region and low etch bias, and Ru has been proposed as a capping material owing to its high oxidation resistance and high EUV reflectivity. 8) It is possible to eliminate the buffer layer with a combination of TaN and Ru owing to the high etch selectivity of TaN to Ru. 8) To meet the EUV reflectivity requirement (<0:5%) of the SEMI standard, the absorber thickness should be at least 70 nm.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Effect of Attenuated Phase Shift Mask Structure on Extreme Ultraviolet Lithography

Shin

Jeoung

Kim

et al. 2009

jjap

Self Cite

View full text Add to dashboard Cite

Optimization of the absorber stack is becoming a critical issue in extreme ultraviolet (EUV) lithography. The attenuated phase shift mask (att-PSM) can be a long-term solution for continued technological improvements. The designed structure is based on the Fabry-Perot structure that consists of a TaN attenuator, an Al 2 O 3 spacer, and a Mo phase shifter. The total thickness of the absorber stack is 52 nm. The characteristics of the designed att-PSM are an EUV reflectivity (9.5% at 13.5 nm) and phase shift effect (180 at 13.5 nm) that maximize the image contrast in EUV exposure, and a low deep ultraviolet (DUV) reflectivity (1.72% at 257 nm) for high efficiency DUV inspection. All the simulations were carried out with the EM-Suite simulation tool. As a result, we determined that the att-PSM shows a higher image contrast, a larger process window, and a lower horizontal-vertical (H-V) CD bias than a binary image mask.

show abstract

Section: Resultsmentioning

confidence: 99%

“…8) It is possible to eliminate the buffer layer with a combination of TaN and Ru owing to the high etch selectivity of TaN to Ru. 8) To meet the EUV reflectivity requirement (<0:5%) of the SEMI standard, the absorber thickness should be at least 70 nm. 9) However, a thicker absorber pattern causes problems related to the shadowing effect.…”

Section: Resultsmentioning

confidence: 99%

Effect of Attenuated Phase Shift Mask Structure on Extreme Ultraviolet Lithography

Shin

Jeoung

Kim

et al. 2009

jjap

Self Cite

View full text Add to dashboard Cite

show abstract

“…A typical EUVL mask consists of several layers: absorber layer for EUV absorption, buffer layer for absorber etch stop and damage prevention during repair, capping layer for oxidation resistance of multilayer, and Mo/Si multilayer for EUV reflection. [29][30][31] During the EUV exposure the pressure in the chamber was maintained at $5 Â 10 À7 Torr. Figure 4(a) shows a carbon contamination image on Mo/Si multilayer pad measured by optical microscope and contamination thickness measured by Zygo interferometer and Fig.…”

Section: Experiments and Discussionmentioning

confidence: 99%

Effect on Critical Dimension Performance for Carbon Contamination of Extreme Ultraviolet Mask Using Coherent Scattering Microscopy and In-situ Contamination System

Doh

Lee

et al. 2012

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

The impact of carbon contamination on imaging performance was analyzed using an in-situ accelerated contamination system (ICS) combined with coherent scattering microscopy (CSM) which was installed at 11B extreme ultraviolet lithography (EUVL) beamline of the Pohang Accelerator Laboratory (PAL). The CSM/ICS is composed of CSM for measuring imaging properties and ICS for implementing acceleration of carbon contamination. The mask critical dimension (CD) and reflectivity were compared before and after carbon contamination through accelerated exposure. The reflectivity degradation was measured as 1.3, 2.0, and 2.8% after 1, 2, and 3 h exposure, respectively, due to carbon contamination of 5, 10, and 20 nm as measured by Zygo interferometer. The mask CD change for 88 nm line and space pattern was analyzed using CSM and a CD scanning electron microscope (SEM), and the result shows CD-SEM and CSM give large difference of 3.8 times in mask ΔCD after carbon contamination. This difference confirms the importance of using actinic inspection technique that employs exactly the same imaging condition as exposure tool.

show abstract

“…2. This topography might create "shadow effect" during cleaning process [3]. In this paper, the effect of pattern topography on the particle removal was investigated on trench patterns using LSC.…”

Section: Introductionmentioning

confidence: 99%

Effect of Laser Shock Wave Cleaning Direction on Particle Removal Behavior at Trenchs

Kim,

Busnaina,

Park

2009

Meet. Abstr.

View full text Add to dashboard Cite

show abstract

Characterization of Ru layer for capping/buffer application in EUVL mask

Cited by 16 publications

References 12 publications

Effect of Attenuated Phase Shift Mask Structure on Extreme Ultraviolet Lithography

Effect of Attenuated Phase Shift Mask Structure on Extreme Ultraviolet Lithography

Effect on Critical Dimension Performance for Carbon Contamination of Extreme Ultraviolet Mask Using Coherent Scattering Microscopy and In-situ Contamination System

Effect of Laser Shock Wave Cleaning Direction on Particle Removal Behavior at Trenchs

Contact Info

Product

Resources

About