Characterization of Sb2Te3 thin films prepared by electrochemical technique

Sonawane, Shivaji M.; Chaure, Shweta; Chaure, Nandu B.

doi:10.1016/j.jpcs.2022.111095

Cited by 6 publications

(2 citation statements)

References 31 publications

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“…Meanwhile, Te 3d displays a peak at 569.7 eV for Te 3d 5/2 , and 580.1 eV for Te 3d 3/2 [15,35]. Notably, higher binding energy peaks at 573.5 eV and 582.9 eV are attributed to tellurium oxide formation resulting from surface oxidation [36]. The values measured for S 2p, W 4f, Sb 3d, and Te 3d are consistent with reported values for WS 2 and Sb 2 Te 3 .…”

Section: Resultsmentioning

confidence: 99%

Direct Selective Epitaxy of 2D Sb2Te3 onto Monolayer WS2 for Vertical p–n Heterojunction Photodetectors

Pan,

Dou,

et al. 2024

Nanomaterials

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Two-dimensional transition metal dichalcogenides (2D-TMDs) possess appropriate bandgaps and interact via van der Waals (vdW) forces between layers, effectively overcoming lattice compatibility challenges inherent in traditional heterojunctions. This property facilitates the creation of heterojunctions with customizable bandgap alignments. However, the prevailing method for creating heterojunctions with 2D-TMDs relies on the low-efficiency technique of mechanical exfoliation. Sb2Te3, recognized as a notable p-type semiconductor, emerges as a versatile component for constructing diverse vertical p–n heterostructures with 2D-TMDs. This study presents the successful large-scale deposition of 2D Sb2Te3 onto inert mica substrates, providing valuable insights into the integration of Sb2Te3 with 2D-TMDs to form heterostructures. Building upon this initial advancement, a precise epitaxial growth method for Sb2Te3 on pre-existing WS2 surfaces on SiO2/Si substrates is achieved through a two-step chemical vapor deposition process, resulting in the formation of Sb2Te3/WS2 heterojunctions. Finally, the development of 2D Sb2Te3/WS2 optoelectronic devices is accomplished, showing rapid response times, with a rise/decay time of 305 μs/503 μs, respectively.

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Section: Resultsmentioning

confidence: 99%

Direct Selective Epitaxy of 2D Sb2Te3 onto Monolayer WS2 for Vertical p–n Heterojunction Photodetectors

Pan,

Dou,

et al. 2024

Nanomaterials

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“…The peak of Te‐3d 5/2 at 571.8 eV and the peak of Te‐3d 3/2 at 582.2 eV are clearly seen in the Figure 2j , which is in accordance with the literature XPS results reported for Sb 2 Te 3 . [ 30 ] In addition, a second set of peaks can be seen at higher binding energies of 539 and 529.7 eV for Sb‐3d 5/2 and Sb‐3d 3/2 , which are oxidation peaks formed due to surface oxidation. For tellurium, there is also a second set of weak peaks at higher binding energies, attributed to surface oxidation peaks of Te‐3d 3/2 (585.9 eV) and Te‐3d 5/2 (575.5 eV), respectively.…”

Section: Resultsmentioning

confidence: 99%

High Thermoelectric Performance in Ti₃C₂T_x MXene/Sb₂Te₃ Composite Film for Highly Flexible Thermoelectric Devices

Hou

et al. 2023

Global Challenges

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Flexible thin‐film thermoelectric devices (TEDs) can generate electricity from the heat emitted by the human body, which holds great promise for use in energy supply and biomonitoring technologies. The p‐type Sb2Te3 hexagon nanosheets are prepared by the hydrothermal synthesis method and compounded with Ti3C2Tx to make composite films, and the results show that the Ti3C2Tx content has a significant impact on the thermoelectric properties of the composite films. When the Ti3C2Tx content is 2 wt%, the power factor of the composite film reaches ≈59 µW m−1 K−2. Due to the outstanding electrical conductivity, high specific surface area, and excellent flexibility of Ti3C2Tx, the composite films also exhibit excellent thermoelectric and mechanical properties. Moreover, the small addition of Ti3C2Tx has a negligible effect on the phase composition of Sb2Te3 films. The TED consists of seven legs with an output voltage of 45 mV at ΔT = 30 K. The potential of highly flexible thin film TEDs for wearable energy collecting and sensing is great.

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Highly Crystalline and Stoichiometric Growth of CdTe by Cost-Effective Hydrothermal Technique

Salve,

Ukarande,

Olusola

et al. 2024

J. Electron. Mater.

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Characterization of Sb2Te3 thin films prepared by electrochemical technique

Cited by 6 publications

References 31 publications

Direct Selective Epitaxy of 2D Sb2Te3 onto Monolayer WS2 for Vertical p–n Heterojunction Photodetectors

Direct Selective Epitaxy of 2D Sb2Te3 onto Monolayer WS2 for Vertical p–n Heterojunction Photodetectors

High Thermoelectric Performance in Ti₃C₂T_x MXene/Sb₂Te₃ Composite Film for Highly Flexible Thermoelectric Devices

Highly Crystalline and Stoichiometric Growth of CdTe by Cost-Effective Hydrothermal Technique

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Characterization of Sb2Te3 thin films prepared by electrochemical technique

Cited by 6 publications

References 31 publications

Direct Selective Epitaxy of 2D Sb2Te3 onto Monolayer WS2 for Vertical p–n Heterojunction Photodetectors

Direct Selective Epitaxy of 2D Sb2Te3 onto Monolayer WS2 for Vertical p–n Heterojunction Photodetectors

High Thermoelectric Performance in Ti3C2Tx MXene/Sb2Te3 Composite Film for Highly Flexible Thermoelectric Devices

Highly Crystalline and Stoichiometric Growth of CdTe by Cost-Effective Hydrothermal Technique

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High Thermoelectric Performance in Ti₃C₂T_x MXene/Sb₂Te₃ Composite Film for Highly Flexible Thermoelectric Devices