Characterization of self-assembled ordered ZnO nanowire networks applied to photodetection

Peng, Shiming; Su, Yan–Kuin; Ji, Liang‐Wen

doi:10.1016/j.mee.2012.04.034

Cited by 6 publications

(5 citation statements)

References 29 publications

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“…In the time domain, the speed of a PD is often characterized by the rise time (τ r , the time interval from 10% to 90% of the maximum photocurrent) and the fall (τ f , the time interval from 90% to 10% of the maximum photocurrent) of its response to an impulse signal. Further analysis of the device reveals a fast τ r of 95 μs and τ f of 100 μs, which is a very fast response compared to other reported results on NWbased photodetectors [17][18][19][20][21][22][23]. The observed time response and responsivity of our NW network photodetector is much better compared to previous reports.…”

Section: Photoresponse Of Msm Detectorssupporting

confidence: 40%

“…The barrier dominated conduction is responsible for the fast response and recovery time. Also, it should be highlighted that this light-induced barrier height modulation in the NW network is much faster than the trap discharging or oxygen diffusion processes [17][18][19][20]. Therefore, NW network devices exhibit a much faster response and relaxation time than their single NW counterparts.…”

Section: Photoresponse Of Msm Detectorsmentioning

confidence: 99%

“…However it should be noted that most of the previous reports are more focused on photodetection using single NW-based devices, which need complex lithography processes [17] with very small yield. Due to these limitations the single NWbased devices are not much use for large area applications [17][18][19][20][21][22]. Instead of single NWs, devices based on network NWs have shown significantly good performances with low cost and a simple fabrication process, which facilitates mass production [21][22][23][24][25].…”

Section: Introductionmentioning

confidence: 99%

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High speed MSM photodetector based on Ge nanowires network

Dhyani

Das

2017

Semicond. Sci. Technol.

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This paper presents the photoresponse characteristics of a high speed Ge nanowires (NWs) network metal-semiconductor-metal photodetector. Ge NWs with different diameters (30 nm-100 nm) were grown by a vapour-liquid-solid method on SiO 2 /Si (100) wafers. Responsivity up to 1.75 A W −1 has been observed for a 30 nm NWs device compared to 0.5 A W −1 for a 100 nm NWs detector. A large population of surface states results in higher responsivity in a smaller diameter NWs device. The high gain in photocurrent has been explained using back-to-back Schottky junctions in a NWs network. The 30 nm NWs detector shows a fast photoresponse with a rise time of 95 μs and a fall time of 100 μs. The observed diameter-dependent time response in network NWs devices has been explained using barrier-dominant photo-conductance.

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Section: Photoresponse Of Msm Detectorssupporting

confidence: 40%

Section: Photoresponse Of Msm Detectorsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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High speed MSM photodetector based on Ge nanowires network

Dhyani

Das

2017

Semicond. Sci. Technol.

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“…Moreover, various nanostructures are recently reported in published literature, were used to compare to this present work of which the PDs performance, as displayed in Table I. [27][28][29][30][31] The Ga-ZnO NSs have higher UV/vis rejection ratio and larger photo to dark current ratio than other In this paper nanostructure. Hence, the enhancement PDs performance can be attributed to Ga dopant and NSs shape, high surface to volume ratio of 2D NS structures and its unconventional properties.…”

Section: Resultsmentioning

confidence: 99%

Low-Frequency Noise Characteristics of Gallium-Doped ZnO Nanosheets as Photodetectors

Yang

Hsiao

et al. 2014

J. Electrochem. Soc.

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This study reports the growth of vertically aligned gallium (Ga)-doped ZnO (GZO) nanosheets (NSs) on a glass substrate using low temperature (90 • C) hydrothermal method. The GZO NSs exhibited hexagonal wurtzite structures with a sharp morphology, with average length and diameter of approximately 720 and 26 nm, respectively. A GZO NS metal-semiconductor-metal (MSM) ultraviolet photodetector (PD) was also fabricated. The UV-to-visible rejection ratio of the fabricated PD was approximately 81 when biased at 1 V with a sharp cutoff at 340 nm. With an incident light wavelength of 340 nm and an applied bias of 1 V, the measured responsivity of the PD was 2.83 × 10 −5 A/W. Furthermore, the noise equivalent power (NEP) and detectivity of the fabricated GZO NS MSM PD were 5.92 × 10 −9 W and 2.24 × 10 9 cm • Hz 0.5 • W −1 , respectively.

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“…Recently, numerous vertically-oriented one-dimensional nanostructures fabrication methods, using bottom-up synthesis processes have attracted interest owing to their simplicity of synthesis and high electromechanical performance. Materials such as carbon nanotubes (CNTs), 1 wide band-gap semiconductors, 2 metal nanowires 3 and several oxides such as In 2 O 3 , 4 ZnO, 5 SnO 2 6 and Ga 2 O 3 7 8 have stimulated considerable interest. Some of these materials have low work function and/or high chemical stability.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Ga<SUB>2</SUB>O<SUB>3</SUB> Nanorods with Ultra-Sharp Tips for High-Performance Field Emission Devices

Bayam¹,

Logeeswaran²,

Katzenmeyer³

et al. 2015

sci adv mater

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We synthesized catalyst-free-Ga 2 O 3 nanorods with terminated ultra-sharp tips by heat treating single crystalline GaAs in a chemical vapor deposition (CVD) chamber without introducing a precursor. The unique, straightforward , synthetic route and a possible growth mechanism are discussed to explain the different morphology of the grown nanorods and the ultra-sharp nanostructures. The morphology and structure of the nanorods were characterized by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD) and Raman-spectroscopy. The ultra-sharp tips were found to have radii of ∼3-5 nm and were utilized to achieve enhanced field emission. The field emission characteristics demonstrated a turn-on field of 2.1 V m −1 , a threshold electric field of 5.6 V m −1 , and a geometrical field enhancement factor of 3786, making them comparable to nanostructured diamond and highly oriented single wall carbon nanotubes.

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Characterization of self-assembled ordered ZnO nanowire networks applied to photodetection

Cited by 6 publications

References 29 publications

High speed MSM photodetector based on Ge nanowires network

High speed MSM photodetector based on Ge nanowires network

Low-Frequency Noise Characteristics of Gallium-Doped ZnO Nanosheets as Photodetectors

Synthesis of Ga<SUB>2</SUB>O<SUB>3</SUB> Nanorods with Ultra-Sharp Tips for High-Performance Field Emission Devices

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