Characterization of Semi-Insulating 4H Silicon Carbide for Radiation Detectors

Mandal, Krishna C.; Krishna, Ramesh M.; Muzykov, Peter G.; Das, Sandip; Sudarshan, Tangali S.

doi:10.1109/tns.2011.2152857

Cited by 45 publications

(29 citation statements)

References 17 publications

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“…1 Diode-type detectors fabricated using SiC epitaxial layers 2,3 perform well in high-resolution detection of low penetration depth a-radiation, whereas the resolution of the detectors based on bulk semi-insulating SiC grown by physical vapor transport (PVT) is not yet adequate presumably due to high density of defects and deep level centers, 4 implying that further quality improvement of these crystals is necessary.…”

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confidence: 99%

Highly sensitive x-ray detectors in the low-energy range on n-type 4H-SiC epitaxial layers

2012

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Highly sensitive x-ray detectors in the low-energy range on n-type 4H-SiC epitaxial layers

2012

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“…SiC allows operability at extreme conditions of temperature and pressure [4][5][6][7][8][9][10][11]. It is regarded as a strong candidate for high-power, high-frequency, and high-temperature devices due to its excellent physical properties, that is, a wide band gap ensuring a very low leakage current, excellent chemical properties, high thermal conductivity, high saturation velocity of carriers and high breakdown field as well as it significant high radiation tolerance [12][13][14][15][16][17].…”

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confidence: 99%

Structural and defects induced phenomena in γ-rays irradiated 6H-SiC

Sibuyi

Ngom

Kotsedi

et al. 2016

Radiation Physics and Chemistry

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“…To fulfill this task, we have successfully applied TSC spectroscopy, which is known to be a very sensitive technique for investigating point-defects and impurity-related traps in various semiconductors and it was used to characterize deep level centers in high purity bulk SI SiC substrates. [11][12][13] …”

Section: Introductionmentioning

confidence: 99%

Characterization of deep levels in n-type and semi-insulating 4H-SiC epitaxial layers by thermally stimulated current spectroscopy

Muzykov

Krishna

Mandal

2012

Journal of Applied Physics

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We have investigated deep level centers in n-type and semi-insulating (SI) 4H-SiC epitaxial layers by thermally stimulated current (TSC) spectroscopy. The epitaxial layers were grown using chemical vapor deposition utilizing a dichlorosilane precursor. Both epitaxial layers exhibited relatively shallow levels related to Al, B, L- and D-centers. A deep level center with an activation energy of 1.1 eV, peaked at ∼400 K, was detected in the n-type epitaxial layer and correlated with the IL2 level and the 1.1 eV center in a high purity bulk SI 4H-SiC. The TSC spectra of the SI epitaxial layer was dominated by the peaks at 525–585 K that we attributed to intrinsic defects and their complexes with energy levels close to the middle of the bandgap. The TSC spectra of SI epitaxial layer exhibited peaks with different current polarity which is explained by thermoelectric effect and the built-in electric field reversal. The results of the transfer length method measurements of the SI epitaxial layer and the room temperature current-voltage (I-V) characteristics of both epitaxial layers are also reported.

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Characterization of Semi-Insulating 4H Silicon Carbide for Radiation Detectors

Cited by 45 publications

References 17 publications

Highly sensitive x-ray detectors in the low-energy range on n-type 4H-SiC epitaxial layers

Highly sensitive x-ray detectors in the low-energy range on n-type 4H-SiC epitaxial layers

Structural and defects induced phenomena in γ-rays irradiated 6H-SiC

Characterization of deep levels in n-type and semi-insulating 4H-SiC epitaxial layers by thermally stimulated current spectroscopy

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