Characterization of Semiconductor Devices at Very High Temperatures

Abstract

We present a dedicated measurement set-up for the electrical characterization of semiconductor devices and microsystems under very high temperature conditions. The experimental set-up comprises a vacuum system as basic unit and a number of sample stages for different applications. The system enables measurements in the temperature range between room temperature and at least 700°C. We give a detailed description of the measurement system, sample mounting techniques, and exemplary measurements on silicon and SiC devices and test structures.

Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review

“…In fact the convective and radiative thermal losses are very large and it is difficult to know precisely the real temperature of the chip. This is the reason why authors like Borthen and Wachutka [57] present experimental setups in order to do precise characterizations of high temperature semiconductor devices. In [57] the experiment allows for measurements until 700°C, a vacuum chamber is used in order to cancel the convective losses and to prevent the oxidation of the device.…”