Characterization of Semiconductor Nanowires Using Optical Tweezers

Abstract

We report on the optical trapping characteristics of InP nanowires with dimensions of 30 (±6) nm in diameter and 2-15 μm in length. We describe a method for calibrating the absolute position of individual nanowires relative to the trapping center using synchronous high-speed position sensing and acousto-optic beam switching. Through brownian dynamics we investigate effects of the laser power and polarization on trap stability, as well as length dependence and the effect of simultaneous trapping multiple nanowires.

An optically actuated surface scanning probe

“…the precision with which the sensing element can be positioned). Increased attention has recently been directed towards the optical trapping and control of micro-and nano-rods, not only for their applications in high precision force and torque sensing [14,15], but also in order to investigate their properties [16], and their potential in device fabrication [17].…”

Optical binding between knotted and chiral nanoparticles

“…11 While optical tweezers has been widely applied to the task of nanoparticle manipulation, [12][13][14][15][16][17] there is increasing interest in techniques for promoting self-organisation. 18,19 Optical binding offers one such possibility.…”

Optical binding between nanowires

“…11,12 While optical tweezers have been successfully applied to the task of nanoparticle manipulation, [13][14][15][16][17] the application of optical binding has been focused, to a great extent, on the behaviour of spherical particles. Here we study the behaviour of dielectric nanowires held in linearly-polarised counter-propagating plane waves.…”