Characterization of SiGe Layer during Ge Condensation Process by X-ray Diffraction Methods

Shimura, Takayoshi; Shimokawa, Daisuke; Hosoi, Takuji; Imai, Yasuhiko; Sakata, Osami; Kimura, Shigeru; Watanabe, Heiji

doi:10.1143/jjap.50.010112

Cited by 4 publications

(2 citation statements)

References 15 publications

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“…This is another advantage in our SGOI process, distinguishable from methods using MBE or CVD. [25][26][27][28][29][30] The surface roughness was investigated by atomic force microscope (AFM) after removal of the upper SiO 2 layer by dHF acid, indicating a root mean square (RMS) of 0.436 nm at 2 Â 2 m 2 , which is a very encouraging value in terms of preparation for further research.…”

Section: Omega [Deg] Intensity [Cps]mentioning

confidence: 89%

SiGe Synthesis by Ge Ion Implantation

Yuk

Lim

2012

Jpn. J. Appl. Phys.

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We report here the successful synthesis of SiGe by Ge ion implantation into Si-on-insulator (SOI) substrates. The fundamental principle for our SiGe synthesis is a chemical reaction preference by nature; oxygen molecules preferentially combine with Si atoms rather than Ge atoms since the formation energy of SiO2 is lower than GeO/GeO2, and the chemical bond strength of SiO2 is higher. This phenomenon consequently retards the diffusion of implanted Ge ions from the desired area, offering them sufficient time and chances to homogeneously unite with Si atoms and curing implantation damage during O2 gas annealing. Thus, the result is practical synthesis of SiGe that can flexibly create various Ge concentrations along with high crystalline quality. Ge ions with a dose of 1017 cm-2 are implanted at 100 keV into 193-nm-thick top Si layers of SOIs at room temperature. The Ge-implanted samples are subsequently annealed at 1100 or 1200 °C in an O2 gas ambient for 5 to 180 min. It is found that the implanted Ge ions mostly remain in the desired area during O2 gas annealing. An apparent increase in Ge concentration and a significant decrease in defect density by increasing annealing time are also observed. A theoretical basis and useful simulation for this material synthesis method are presented in this study, being supported by evidential experimental data and comparison of theoretical calculation and measured values.

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Section: Omega [Deg] Intensity [Cps]mentioning

confidence: 89%

SiGe Synthesis by Ge Ion Implantation

Yuk

Lim

2012

Jpn. J. Appl. Phys.

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“…Control of oxidation process and annealing allow transforming the silicon layer of FDSOI to a highly concentrated SiGe alloy. This complex process needs to be monitored in terms of film quality, composition homogeneity but also strain distribution [20].…”

Section: Characterization Of Sige Condensation Processmentioning

confidence: 99%

Micro‐Raman spectroscopy as a complementary technique to high resolution X‐ray diffraction for the characterization of Si_1‐xGe_x thin layers

Durand

Rouchon

Le-Cunff

et al. 2015

Phys. Status Solidi C

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In advanced transistor technology, Silicon‐Germanium alloy (SiGe) is being used as a replacement for Si channels to achieve higher mobility. Among the various characterization techniques μ‐Raman spectroscopy is a promising candidate due to a good spatial resolution and low detection threshold. This study presents the evaluation of the technique for the measurement of Ge concentration and comparison to other metrology techniques. As a first step to evaluate the μ‐Raman capability, we considered a simple case of thin SiGe films from 12nm down to 4 nm thickness. Assuming an epitaxial pseudomorphic structure, the Ge content has been extracted for all samples with an average 0.3% stability and at least 1% accuracy as confirmed by high resolution X‐ray diffraction (HRXRD) and secondary ion mass spectrometry analysis (SIMS). We then studied a more complex structure of SiGe on fully depleted‐silicon on insulator (FD‐SOI) as being critical for the development of condensation process of advanced transistor technology. Since μ‐Raman requires prior knowledge of the structural state of the layer, we discuss the interest to combine μ‐Raman measurements with X‐rays diffraction in order to extract the Ge composition on such stacks. μ‐Raman shows a real potential for thin SiGe film characterization and it does not suffers of the lack of precision for very thin films as HRXRD does, however there are still some developments to be made before using it as a metrology technique. Moreover, it could be interesting to couple the technique with HRXRD measurement. The approach to control SiGe condensation process on FD‐SOI might suggest interesting experiment. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Gate stack technology for advanced high-mobility Ge-channel metal-oxide-semiconductor devices – Fundamental aspects of germanium oxides and application of plasma nitridation technique for fabrication of scalable oxynitride dielectrics

Watanabe

Kutsuki

Atsushi

et al. 2012

Current Applied Physics

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Characterization of SiGe Layer during Ge Condensation Process by X-ray Diffraction Methods

Cited by 4 publications

References 15 publications

SiGe Synthesis by Ge Ion Implantation

SiGe Synthesis by Ge Ion Implantation

Micro‐Raman spectroscopy as a complementary technique to high resolution X‐ray diffraction for the characterization of Si_1‐xGe_x thin layers

Gate stack technology for advanced high-mobility Ge-channel metal-oxide-semiconductor devices – Fundamental aspects of germanium oxides and application of plasma nitridation technique for fabrication of scalable oxynitride dielectrics

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Characterization of SiGe Layer during Ge Condensation Process by X-ray Diffraction Methods

Cited by 4 publications

References 15 publications

SiGe Synthesis by Ge Ion Implantation

SiGe Synthesis by Ge Ion Implantation

Micro‐Raman spectroscopy as a complementary technique to high resolution X‐ray diffraction for the characterization of Si1‐xGex thin layers

Gate stack technology for advanced high-mobility Ge-channel metal-oxide-semiconductor devices – Fundamental aspects of germanium oxides and application of plasma nitridation technique for fabrication of scalable oxynitride dielectrics

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Micro‐Raman spectroscopy as a complementary technique to high resolution X‐ray diffraction for the characterization of Si_1‐xGe_x thin layers