Characterization of silicon carbide thin films grown on Si and SiO2/Si substrates

Zanola, Paolo; Bontempi, Elza; Ricciardi, Carlo; Barucca, G.; Depero, Laura E.

doi:10.1016/j.mseb.2004.07.013

Cited by 9 publications

(5 citation statements)

References 14 publications

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“…In general, good results have been achieved with the SiO 2 , although this material has a coefficient of thermal expansion (CTE) significantly lower than the SiC, giving rise to thermal stresses at the SiC/SiO 2 interface. Many studies have shown CVD, PECVD and sputtering as appropriate techniques to deposit SiC films on SiO 2 /Si (Zanola, 2004). After the film deposition, the residual stress must be investigated.…”

Section: Requirements Of Sic Films For Piezoresistive Sensors Applicamentioning

confidence: 99%

Recent Developments on Silicon Carbide Thin Films for Piezoresistive Sensors Applications

Fraga¹,

Pessoa²,

Maciel³

et al. 2011

Silicon Carbide - Materials, Processing and Applications in Electronic Devices

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Section: Requirements Of Sic Films For Piezoresistive Sensors Applicamentioning

confidence: 99%

Recent Developments on Silicon Carbide Thin Films for Piezoresistive Sensors Applications

Fraga¹,

Pessoa²,

Maciel³

et al. 2011

Silicon Carbide - Materials, Processing and Applications in Electronic Devices

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“…Highresolution X-ray diffraction enables the characterization of thickness, crystallographic structure and stress in thin epitaxial films [168,32,195].…”

Section: X-ray Diffractionmentioning

confidence: 99%

Surface technology for automotive engineering

et al. 2009

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“…However, this information, without the knowledge of the 3D defect distribution, is often insufficient. The structural nature of the defects can be characterized by methods such as transmission electron microscopy (TEM) 124–126 and various X‐ray diffraction methods for detection of lattice imperfection 127–130 . The TEM technique provides excellent 2D resolution, but requires special sample preparation, and the interpretation of the results is often not straightforward.…”

Section: Possible Applicationsmentioning

confidence: 99%

ESR Microscopy and Nanoscopy with “Induction” Detection

Blank

Freed

2006

Israel Journal of Chemistry

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The current state‐of‐the‐art in the fields of Nuclear Magnetic Resonance (NMR) and Electron Spin Resonance (ESR) micro‐imaging is reviewed. Special attention is given to the uniqueness and the advantages of the conventional “induction” detection method with respect to other emerging sensitive magnetic resonance detection and imaging techniques. Following this, a theoretical description of the factors affecting the sensitivity and resolution in induction detection ESR is provided. Based on the theory, new approaches to substantially improve ESR capabilities, both at room temperature and at low cryogenic temperatures, are discussed. Representative results of experiments conducted at room temperature and at frequencies of 10–16 GHz show that with test samples, a sensitivity of ∼107 electron spins and a resolution of ∼3 microns are currently available. The results confirm the validity of the theoretical approach and confirm the value of striving for even higher frequencies and lower temperatures, in order to further improve the performance Finally, some of the current and potential applications of ESR microscopy and nanoscopy (involving imaging with a resolution of ∼100 nm or better) are presented.

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Characterization of silicon carbide thin films grown on Si and SiO2/Si substrates

Cited by 9 publications

References 14 publications

Recent Developments on Silicon Carbide Thin Films for Piezoresistive Sensors Applications

Recent Developments on Silicon Carbide Thin Films for Piezoresistive Sensors Applications

Surface technology for automotive engineering

ESR Microscopy and Nanoscopy with “Induction” Detection

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