Characterization of silicon wafer bonding for Power MEMS applications

Ayón, Arturo A.; Zhang, Xin; Turner, Kevin T.; Choi, Dongwon; Miller, Bruno; Nagle, Steven F.; Spearing, S. Mark

doi:10.1016/s0924-4247(02)00329-1

Cited by 34 publications

(18 citation statements)

References 14 publications

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“…Remarkably, all obtained data for the four material pairs plotted in Fig. 2(c) are similar to or higher than the toughness data for silicon wafer bonding measured elsewhere 9 10 11 although each joining here is achieved without external forces during thermal processing as opposed to wafer bonding techniques. Yet, it is worthwhile to mention that for the Si-Au blister test specimen, ~150 kPa is applied during thermal processing to form hermetic sealing in the microcavity.…”

Section: Discussionsupporting

confidence: 72%

“…6 and elsewhere 4 . The receiving substrate with the transferred ink is thermally processed subsequently to join the ink and a surface where it is placed by fusion 9 10 , eutectic 11 or adhesive 12 bonding in an appropriate condition ( Supplementary Table 1 ). This transferring and joining cycle is repeated until an anticipated 3D architecture is achieved as presented in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Four different materials are processed into inks, assembled into spatially organized 3D architectures via reversible adhesion-based transfer printing followed by thermal processing-based material joining. Depending on assembled material pairs, diverse joining mechanisms including fusion 9 10 , eutectic 11 , and adhesive 12 bonding are explored at the microscale. The joining strength for each mechanism is examined utilizing blister tests 13 14 not only for systematic comparison of joining characteristics of four different assembled material pairs but also for quantitative validation of the structural integrity enabled by micro-Lego.…”

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confidence: 99%

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Microassembly of Heterogeneous Materials using Transfer Printing and Thermal Processing

Keum

Yang

Han

et al. 2016

Sci Rep

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Enabling unique architectures and functionalities of microsystems for numerous applications in electronics, photonics and other areas often requires microassembly of separately prepared heterogeneous materials instead of monolithic microfabrication. However, microassembly of dissimilar materials while ensuring high structural integrity has been challenging in the context of deterministic transferring and joining of materials at the microscale where surface adhesion is far more dominant than body weight. Here we present an approach to assembling microsystems with microscale building blocks of four disparate classes of device-grade materials including semiconductors, metals, dielectrics, and polymers. This approach uniquely utilizes reversible adhesion-based transfer printing for material transferring and thermal processing for material joining at the microscale. The interfacial joining characteristics between materials assembled by this approach are systematically investigated upon different joining mechanisms using blister tests. The device level capabilities of this approach are further demonstrated through assembling and testing of a microtoroid resonator and a radio frequency (RF) microelectromechanical systems (MEMS) switch that involve optical and electrical functionalities with mechanical motion. This work opens up a unique route towards 3D heterogeneous material integration to fabricate microsystems.While monolithic microfabrication has been quite successful in the manufacturing of microsystems such as integrated circuits (IC) and microelectromechanical systems (MEMS) 1,2 , continued innovation towards three dimensional (3D) architectures and heterogeneous integration has been limited, which would otherwise enable improvements in performance and novel functionalities of microsystems. Associated challenges originate from layer-by-layer thin film processing on a single substrate and dissimilar nature of materials that may need different techniques to process. Consequently, 3D heterogeneous integration often requires independent fabrication of constituents followed by microassembly rather than monolithic microfabrication. In this context, transfer printing 3,4 has emerged as a method that utilizes highly reversible surface adhesion of a polymeric stamp to deterministically transfer microscale solid objects called "inks". The ability to transfer inks from a donor substrate where inks are grown and processed to a receiving substrate where inks are finally assembled reduces the complexity of manufacturing processes regarding heterogeneous material integration. Furthermore, previously reported micro-masonry 5 which relies on transfer printing demonstrates that after proper thermal processing, direct bonding between transferred silicon inks can be achieved, which may be sufficiently strong to produce various MEMS devices 6-8 . However, limited assembling material classes and quantitatively unknown interfacial characteristics between joined inks suppress broader adaptation of this transfer printing-based microasse...

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Section: Discussionsupporting

confidence: 72%

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

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Microassembly of Heterogeneous Materials using Transfer Printing and Thermal Processing

Keum

Yang

Han

et al. 2016

Sci Rep

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“…If very severe, wafer bow can also prohibit wafer bonding. Wafer bonding of excessively bowed wafers with thick oxide films was found to be extremely challenging (Nagle 2000;Frechette 2000;Ayon et al 2003). Furthermore, as the film is made thicker and thicker, the wafer simply cannot bow enough to relieve the stress, and the films crack.…”

Section: Plasma Enhanced Chemical Vapor Deposition (Pecvd) Is a Specimentioning

confidence: 99%

Residual Stress and Fracture of PECVD Thick Oxide Films for Power MEMS Structures and Devices

Zhang¹

2007

Self Cite

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Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, seerching data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden to Washington Headquarters Service, Directorate for Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and SUPPLEMENTARY NOTES14. ABSTRACT Plasma enhanced chemical vapor deposited (PECVD) silicon oxide (SiOx) is the most commonly used interlayer dielectric (ILD) in MEMS devices and structures. In this project, PECVD SiOx is chosen as an example for the systematic study of mechanical behavior and underlying casual mechanisms of amorphous thin films for MEMS applications, which are generally less well understood because of the complex interplay among the deformation mechanisms. In this project, PECVD SiO, is chosen as an example for the systematic study of mechanical behavior and underlying causal mechanisms of amorphous thin films for MEMS applications, which are generally less well understood because of the complex interplay among the deformation mechanisms. SUBJECT TERMSMechanical behaviors of the PECVD SiOx thin films are probed at 1) different size scales (from wafer level down to micro/nano-scale, and different lengthscale within each realm); 2) different temperatures (from room temperature up to 1100 0C); and 3) with a combination of different experimental techniques (such as substrate curvature measurements, nanoindentation tests, and a novel "microbridge testing" technique, etc.). A broad range of mechanical analysis is covered, including film stress and related material properties changes, elastic properties, plastic properties (both time-independent and time-dependent), deformation mechanisms (both at room temperature and elevated temperatures).Wherever applicable, materials analysis techniques such as SEM, AFM, FTIR, XRD, and SIMS were employed to strengthen the discussions on the structureproperties relationship and the causal mechanisms of the mechanical responses of the PECVD SiOx. These experiments reveal various interesting arid disiirictive characteristics of the mechanical responses of the PECVD SiOx thin films, and the microstructural causal mechanisms for each of them are analyzed in depth.The outcome of this work will provide a comprehensive characterization of the mechanical responses of the PECVD SiOx thin films under different thermal conditions, stress levels, size scales, and in both elastic and plastic regions. In addition, both new experimental methodologies and theoretical models for data 3 analysis are resulted, which can be readily applied to a wide variety of thin film materials for various different applications. Last but not least, the physical causal mechanisms for the experimental results are elucidated, ...

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“…It uses ultrasonic energy (10 to 400 MHz) to propagate inside the objects and characterise the material properties and changes 5 -. 6 On the other hand, Piotrowski et al 7 proposed a transmission method using infrared radiation for detecting the voids and defects of bonded wafers from the measured transmission coefficient. Based on the same principle, in this paper, we introduce the possibility of using the quasi-optical technique at mm-wave frequencies.…”

Section: Introductionmentioning

confidence: 99%