Characterization of single-crystal diamond grown from the vapor phase on substrates of natural diamond

Altukhov, A. A.; Vikharev, A. L.; Горбачев, А. М.; Dukhnovsky, M. P.; Zemlyakov, V. E.; Ziablyuk, K. N.; Mitenkin, A. V.; Muchnikov, A. B.; Radishev, D.B.; Ratnikova, A. K.; Fedorov, Yu. Yu.

doi:10.1134/s106378261103002x

Cited by 11 publications

(4 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is seen that on dependence 𝜎(𝑇) three portions of different low activation energy varyingat low temperatures from Ea=0.03 eV up to Ea=0.07 eV at high temperatures have been obviously observed. Similar dependence of conductivity on the temperature with low activation energy Ea=0.05-0.11 eV is evident in polycrystalline CVD diamond implanted by boron with high energy 60 keV and high dose 2 • 10 16 𝑐𝑚 2 (Figure 4) [25].…”

Section: Electrophysical Properties Of Diamondsupporting

confidence: 63%

“…Because of low hole concentration in sample 5 their mobility (520 cm 2 /(V⋅c)) comparing with other crystals is substantially increased. The record hole mobility 1150 cm 2 /(V⋅c) at layer concentration, an order magnitude lower than for sample 5) has been obtained in paper [25], CVD diamond films implanted by boron and annealed under the conditions which are analogous with ones that are mentioned in Table . Thus, ion implantation of boron large doses allows the conducting layers with high hole mobility and high conductivity even at room temperature to be obtained that is due to the low activation energy of implanted boron at high concentration. The conductivity of hydrogenated diamond is superficial since it disappears even after short-term (~1 min or less) treatment in air plasma at a pressure of 0.5 Torr at which etching of the crystal does not occur.…”

Section: Electrophysical Properties Of Diamondmentioning

confidence: 75%

See 1 more Smart Citation

Growth of synthetic diamond films and their electrophysical properties

Nabiyev,

Huseynov

2023

UNEC j. eng. appl. sci.

View full text Add to dashboard Cite

The possibilities of formation of single-crystal homoepitaxial diamond structures grown by the method of vapor-phase chemical deposition are investigated. Optimal technological conditions for the formation of structures are suggested. The layer with p-type conductivity formation process depending on the temperature and time is determined. It was shown that applied thermal treatment method in hydrogen can be an alternative to the conventional method of H layer formation in microwave hydrogen plasma due to simpler and more reproducible. The profile distribution of boron atoms in a diamond crystal was determined under different implantation modes. The temperature dependence of specific conductivity in the temperature range 80–700 K was studied, and the activation energy was calculated. The results of Hall measurements of the electrophysical parameters of implanted samples are presented, and the effect of nitrogen concentration on the electrophysical parameters is revealed. The electrophysical parameters of the structures obtained under various modes of ion implantation of boron in a crystal and subsequent annealing are presented. The possibility of creating a field effect transistor on a hydrogenated diamond surface is shown. The current-voltage characteristic of the manufactured sample was studied and it was shown that it demonstrates low leakage through the gate.

show abstract

Section: Electrophysical Properties Of Diamondsupporting

confidence: 63%

Section: Electrophysical Properties Of Diamondmentioning

confidence: 75%

Growth of synthetic diamond films and their electrophysical properties

Nabiyev,

Huseynov

2023

UNEC j. eng. appl. sci.

View full text Add to dashboard Cite

show abstract

“…To obtain combined substrates, we used an experi mental setup [10] in which a plasma chemical reactor was based on a microwave cavity. A quartz vessel, in which the microwave discharge in a gas mixture of hydrogen and methane was ignited and maintained, was placed into the cylindrical cavity excited by a mag netron (at a frequency of 2.45 GHz) in the TM 0.13 mode.…”

Section: Resultsmentioning

confidence: 99%

Combined single-crystalline and polycrystalline CVD diamond substrates for diamond electronics

Vikharev

Горбачев

Dukhnovsky³

et al. 2012

Semiconductors

Self Cite

View full text Add to dashboard Cite

“…Single‐crystal diamond was grown in a home‐made 5 kW, 2.45 GHz MPACVD reactor based on a resonant microwave cavity . The parameters of the growth process were identical for all substrates: 3% CH 4 in H 2 , a microwave power of 4 kW, a gas pressure of 150 Torr, a growth time of 90 min, and a CVD layer thickness of 3 μm.…”

Section: Experimental Methodsmentioning

confidence: 99%

Homoepitaxial growth of CVD diamond after ICP pretreatment

Muchnikov

Vikharev

Butler

et al. 2015

Physica Status Solidi (a)

Self Cite

View full text Add to dashboard Cite

The surface morphology of vicinal (100) single-crystal diamond surfaces homoepitaxially grown in a microwave plasma-assisted chemical vapor deposition (MPACVD) reactor is studied. High-pressure and high-temperature (HPHT) single-crystal diamond substrates produced by different vendors are used as substrates. Prior to the CVD growth, substrates were mechanically polished and etched in a separate inductively coupled plasma/reactive ion etching (ICP/RIE) tool using an Ar/Cl 2 gas mixture. The impact of (a) ICP etching regime of the HPHT substrate, (b) substrate polishing, and (c) the HPHT substrate misorientation (off-axis) vicinal angle on the surface morphology is examined. It was found that the ICP etching removes polishing-induced defects in the bulk and also removes diamond particles which are left on the surface of single-crystalline diamond after polishing. The morphology of the surface of the homoepitaxial CVD diamond grown on a substrate, which is free of polishing defects, depends not only on the parameters of the growth process (substrate temperature, composition of the gas mixture, pressure, etc.), but also on the value and direction of the off-axis angle.

show abstract

Characterization of single-crystal diamond grown from the vapor phase on substrates of natural diamond

Cited by 11 publications

References 8 publications

Growth of synthetic diamond films and their electrophysical properties

Growth of synthetic diamond films and their electrophysical properties

Combined single-crystalline and polycrystalline CVD diamond substrates for diamond electronics

Homoepitaxial growth of CVD diamond after ICP pretreatment

Contact Info

Product

Resources

About