2013
DOI: 10.1063/1.4800830
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Characterization of space charge layer deep defects in n+-CdS/p-CdTe solar cells by temperature dependent capacitance spectroscopy

Abstract: Temperature Dependent Capacitance Spectroscopy (TDCS) was used to identify carrier trapping defects in thin film n þ -CdS/p-CdTe solar cells, made with evaporated Cu as a primary back contact. By investigating the reverse bias junction capacitance, TDCS allows to identify the energy levels of depletion layer defects. The trap energy levels and trap concentrations were derived from temperature-dependent capacitance spectra. Three distinct deep level traps were observed from the high-temperature (T > 300 K) TDCS… Show more

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Cited by 19 publications
(5 citation statements)
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“…Three characteristic activation energies, including ( E a1 = 0.368 ± 0.008 eV) for the HI‐etched device and ( E a1 = 0.430 ± 0.009 eV) and ( E a2 = 0.409 ± 0.023 eV) for the control device, are extracted from fitting with Equation . The values of 0.430 and 0.368 eV for the non‐HI and HI‐etched devices, respectively, are most likely related to H2‐type (hole trap) defects and their ionization by hole emission over the back‐contact potential barrier . Note that the E a1 values determined by TAS are in good agreement with the barrier heights that were calculated from J – V – T curves, with values of 0.404 and 0.377 eV for the control and HI‐etched devices, respectively …”
Section: Resultssupporting
confidence: 72%
“…Three characteristic activation energies, including ( E a1 = 0.368 ± 0.008 eV) for the HI‐etched device and ( E a1 = 0.430 ± 0.009 eV) and ( E a2 = 0.409 ± 0.023 eV) for the control device, are extracted from fitting with Equation . The values of 0.430 and 0.368 eV for the non‐HI and HI‐etched devices, respectively, are most likely related to H2‐type (hole trap) defects and their ionization by hole emission over the back‐contact potential barrier . Note that the E a1 values determined by TAS are in good agreement with the barrier heights that were calculated from J – V – T curves, with values of 0.404 and 0.377 eV for the control and HI‐etched devices, respectively …”
Section: Resultssupporting
confidence: 72%
“…The characteristic activation energy is calculated from fitting the curves of Arrhenius plot, Figure S5, by using Equation (3). The activation energy extracted from C-F spectra at temperature varies between 150 and 210 K (labeled E a1 ) and is most likely related to H2-type (hole trap) defects and their ionization by hole emission over the backcontact potential barrier, 12,26,[31][32][33] as confirmed by bias-dependent AS measurements showing that E a1 is altered by bias voltage ( Figure 6A). Note that the E a1 values determined by AS are in good agreement with the barrier heights calculated from IS analysis and J-V-T curves ( Figure S3).…”
Section: Admittance Spectroscopy Measurementsmentioning
confidence: 89%
“…Solar cells are becoming an essential energy source for society as the demand for greener approaches for production of electricity is on the rise. Various types of solar cells include thin film solar cells, traditional silicon solar cells, 120 polymer solar cells, 24,118,119 CdTe solar cells, [121][122][123][124] and other novel solar cells 125,126 (shown in Figure 6A). GQDs can be used to fabricate solar cells due to their strong fluorescence, intense absorption in the UV range, and easy functionalization.…”
Section: Solar Cellsmentioning
confidence: 99%