2015
DOI: 10.1016/j.saa.2015.05.014
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Characterization of sprayed TiO2 on ITO substrates for solar cell applications

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Cited by 36 publications
(19 citation statements)
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“…And also, all samples have a polycrystalline structure. This result is confirmed by some studies in the literature (Lee and Liu, 2002;Ramírez-Santos et al, 2012;Arunachalam et al, 2015;Tsega and Dejene, 2017;Biswas et al, 2018).…”
Section: Xrd Measurementssupporting
confidence: 86%
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“…And also, all samples have a polycrystalline structure. This result is confirmed by some studies in the literature (Lee and Liu, 2002;Ramírez-Santos et al, 2012;Arunachalam et al, 2015;Tsega and Dejene, 2017;Biswas et al, 2018).…”
Section: Xrd Measurementssupporting
confidence: 86%
“…They found that; PEG added precursor solution films were crack-free and formed a porous structure after annealing at 500 °C (Ramírez-Santos et al, 2012). Arunachalam et al (2015) produced TiO2 thin film by spray pyrolysis method for solar cell applications. In their study, Titnyl Acetylacetonate (Tiacac) as a precursor solution of TiO2 was prepared in three different molarity (0.05 M, 0.10 M and 0.15 M).…”
Section: Introductionmentioning
confidence: 99%
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“…There are a variety of substrates being used for the growth of TiO 2 nanorods, such as fluorine-doped tin oxide (FTO) (Lei et al, 2010), indium-doped tin oxide (ITO) (Arunachalam et al, 2015), magnesium oxide (MgO) (Garapon et al, 1996), silicon (Si) (Long et al, 2008) and glass (Li et al, 2009) etc. Each substrate has specific features: ITO offers very less resistance and is usually used as bottom electrode in the case of thin film samples (Utsumi et al, 1998).…”
Section: Selection Of Substratesmentioning
confidence: 99%
“…There are several methods for the preparation of TiO 2 thin films, and the physicochemical properties strongly depend on the selected method [16][17][18][19]. Among all the techniques, the dip-coating sol-gel method is the most widely used because of its good homogeneity, simplicity, low cost, and low temperature during the process [20].…”
Section: Introductionmentioning
confidence: 99%