Characterization of stress induced in SOS and Si/γ-Al2O3/Si heteroepitaxial thin films by Raman spectroscopy

Wang, Qiyuan; Wang, Jun; Wang, Jianhuan; Liu, Zhongli; Li, Lin

doi:10.1016/j.jcrysgro.2005.03.056

Cited by 6 publications

(2 citation statements)

References 17 publications

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“…In addition, there is a problem in that the leakage current density rapidly increases due to tunneling of the oxide film. Accordingly, studies are being conducted to replace a material with a high dielectric constant (high-k) with a gate oxide film. , Typically, Al 2 O 3 is used as a gate oxide material due to its relatively high dielectric constant, high breakdown voltage, and stable thermodynamic properties. , However, in the case of Al 2 O 3 directly formed on a silicon substrate, interfacial defects due to lattice mismatch occur, and thus a buffer layer capable of reducing the difference in lattice constant and reducing interfacial defects is required. − …”

Section: Introductionmentioning

confidence: 99%

Dipole Formation and Electrical Properties According to SiO₂ Layer Thickness at an Al₂O₃/SiO₂ Interface

et al. 2021

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Interfacial and electrical properties of Al 2 O 3 /SiO 2 /Si were analyzed to determine the change in interfacial defects and suboxide density according to the thickness of the SiO 2 layer and to determine the effect on dipole and flat-band voltage. As the thickness of the SiO 2 layer increased (5/7/10 nm), the density of the suboxide present at the interface (2.23/3.23/4.73 × 10 14 atoms/cm 2 ) also increased, respectively. In addition, the slow state density, fixed oxide charge density, and interface state density calculated through the capacitance−voltage (C−V) curve all differ depending on the thickness of the SiO 2 layer and are further reduced by postmetallization annealing (PMA). The flat-band voltages (V FB ) of the SiO 2 /Si sample with thicknesses of 5, 7, and 10 nm before PMA are −1.27, −1.32, and −2.20 V, respectively, and further decreased after PMA (−0.64, −0.80, and −1.74 V). Consequently, it was demonstrated that there was a difference in interfacial defects and suboxides according to the thickness. In addition, it was confirmed that when the interfacial defects and suboxides were reduced, the oxide charge state density and oxygen diffusion decreased, and thus the dipole layer strength and V FB shift decreased.

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Section: Introductionmentioning

confidence: 99%

Dipole Formation and Electrical Properties According to SiO₂ Layer Thickness at an Al₂O₃/SiO₂ Interface

et al. 2021

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“…Hughes [4] theoretically estimated the residual stress induced by differences of thermal expansion coefficients between silicon and sapphire materials, and correlated it with the piezoresistanceeffects. Raman Scattering [5] is another method of estimating the residual stresses in SOS, which has been regarded as a powerful tool to characterize the average stress in as_grown and epi-fixed SOS wafers after ion-implantation and annealing [6,7,8]. X-Ray Diffraction (XRD) method [9] has also been utilized to measure strains for stress calculation.…”

Section: Introductionmentioning

confidence: 99%

Determining the Complete Residual Stress Tensors in SOS Hetero-Epitaxial Thin Film Systems by the Technique of X-Ray Diffraction

Liu

Zhang

Brawley

et al. 2010

KEM

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This paper investigates residual stress of epitaxial silicon film on SOS thin film systems. The emphasis was to develop a method to obtain accurately the complete residual stress tensors. It was found that using the multiple asymmetric X-ray diffraction method to measure strains in 13 [hkl] directions, the complete residual stress tensors can be determined reliably. The results were verified by both the Raman Backscattering and the substrate curvature methods.

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Residual stresses in thin film systems: Effects of lattice mismatch, thermal mismatch and interface dislocations

Moridi

Ruan

Zhang

et al. 2013

International Journal of Solids and Structures

120

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Characterization of stress induced in SOS and Si/γ-Al2O3/Si heteroepitaxial thin films by Raman spectroscopy

Cited by 6 publications

References 17 publications

Dipole Formation and Electrical Properties According to SiO₂ Layer Thickness at an Al₂O₃/SiO₂ Interface

Dipole Formation and Electrical Properties According to SiO₂ Layer Thickness at an Al₂O₃/SiO₂ Interface

Determining the Complete Residual Stress Tensors in SOS Hetero-Epitaxial Thin Film Systems by the Technique of X-Ray Diffraction

Residual stresses in thin film systems: Effects of lattice mismatch, thermal mismatch and interface dislocations

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Characterization of stress induced in SOS and Si/γ-Al2O3/Si heteroepitaxial thin films by Raman spectroscopy

Cited by 6 publications

References 17 publications

Dipole Formation and Electrical Properties According to SiO2 Layer Thickness at an Al2O3/SiO2 Interface

Dipole Formation and Electrical Properties According to SiO2 Layer Thickness at an Al2O3/SiO2 Interface

Determining the Complete Residual Stress Tensors in SOS Hetero-Epitaxial Thin Film Systems by the Technique of X-Ray Diffraction

Residual stresses in thin film systems: Effects of lattice mismatch, thermal mismatch and interface dislocations

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Dipole Formation and Electrical Properties According to SiO₂ Layer Thickness at an Al₂O₃/SiO₂ Interface

Dipole Formation and Electrical Properties According to SiO₂ Layer Thickness at an Al₂O₃/SiO₂ Interface