Characterization of surface processes during oxide CMP by in situ FTIR spectroscopy

Künzelmann, U.; Schumacher-Härtwig, H.

doi:10.1016/b978-0-12-821791-7.00008-3

Cited by 2 publications

(3 citation statements)

References 81 publications

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“…8 it can be seen, that both absorption bands of the water show equal values in the decreased intensity, on average (−17 to −27) % at 200 kPa (29 psi). Since both bands have different penetration depths by a factor of 2 (450 nm vs 200 nm, cf 20,22 ), it indicates that the polishing pad displaces approximately equal volumes of water at a distance from substrate. Thus, in the static case, the upper limit of the RCA can be approximately equated with the displaced volume measured.…”

Section: Resultsmentioning

confidence: 99%

“…ATR-FTIR spectroscopy.-All measurements are done in attenuated total reflection (ATR) method 20 using micro-structured single-reflection elements (mSRE) build from standard 100 mm double side polished silicon wafers described in earlier publications by Schumacher et al 21 and Künzelmann and Schumacher. 22 As illustrated in Fig. 1, a grid of parallel V-grooves on the backside serves to couple IR light into and out of the mSRE.…”

Section: Methodsmentioning

confidence: 99%

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Characterization of Pad–Wafer Contact Area and Distance in Chemical-Mechanical Polishing

Schumacher-Härtwig

2023

ECS J. Solid State Sci. Technol.

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Chemical-mechanical polishing (CMP) has been an important process step in microelectronic device manufacturing for more than three decades. Physical CMP modeling utilizes the interactions between the polishing pad and the wafer. This requires data on important physical properties such as the real contact area and the effective pad-to-wafer distance under near-process conditions, as these are directly related to the removal rate, defects, etc. In the present study, a FTIR spectrometer and a custom ATR equipment with micro-structured single reflection elements (mSRE) were used to quantify the volume fraction and contact area of a IC1000 polishing pad in dry and wet state under different static loads. No stable contact over time was observed even at very high pressures of up to 350 kPa. Viscoelastic behavior of an air-dried and water-soaked pad was proven on a microscale by using load response, creep-recovery and stress relaxation tests. This leads to a memory effect of the pad that should be taken into account during dynamic loading as the wafer-pad contact has a direct impact on the material removal. The presented method can therefore provide valuable information about dynamic effects of the pad behavior in near-process environment and thus help to improve the CMP modelling.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Characterization of Pad–Wafer Contact Area and Distance in Chemical-Mechanical Polishing

Schumacher-Härtwig

2023

ECS J. Solid State Sci. Technol.

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“…For n-type poly-Si contacts, the absorption peaks located at $890 cm À1 (Si H bond) 32,33 and $970 cm À1 (Si O H bond) 34,35 slightly increased in intensity after firing, while the height of the peaks at 2330 to 2360 cm À1 (Si H x [x = 1, 2, 3] bonds) increased substantially. 36,37 It is also noted that peak intensity of the Si O Si bonds detected at 1120 cm À1 was unchanged upon firing, [38][39][40] suggesting that the stoichiometry of the interfacial SiO x layers were not significantly altered by the 800 C firing treatment. 37,41 In contrast to n-type poly-Si, p-type poly-Si/SiO x passivating contacts showed nearly identical FTIR spectra before and after firing.…”

Section: Impact Of Firing Temperature On N-and P-type Poly-simentioning

confidence: 99%

Comparison of firing stability between p‐ and n‐type polysilicon passivating contacts

Kang

Sio

Stückelberger

et al. 2022

Progress in Photovoltaics

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This work compares the firing response of ex‐situ doped p‐ and n‐type polysilicon (poly‐Si) passivating contacts and identifies possible mechanisms underlying their distinct firing behavior. The p‐type poly‐Si shows greater firing stability than n‐type poly‐Si, particularly at a higher firing temperature, which results in a substantial increase in the recombination current density parameter J0 from 9 to 96 fA/cm2 upon firing at 900°C for n‐type poly‐Si, in comparison to an increase from 11 to 30 fA/cm2 for p‐type poly‐Si. It is observed that p‐type poly‐Si contacts only suffer a slight degradation or even exhibit a small improvement in J0 after firing at 800°C, depending on the boron diffusion temperature. Secondary ion mass spectrometry (SIMS) results demonstrate that the hydrogen concentration near the interfacial SiOx increases with the peak firing temperature in n‐type poly‐Si, whereas the hydrogen profile remains unchanged for p‐type poly‐Si upon firing at various temperatures. Moreover, we observe that injecting additional hydrogen into the poly‐Si/SiOx stacks fired with SiNx coating layers further degrades n‐type poly‐Si, but recovers the J0 of p‐type poly‐Si to the value before firing. In contrast, removing hydrogen from the fired poly‐Si/SiOx stacks leads to an initial recovery and then a second degradation of J0 in n‐type poly‐Si, but no substantial impact on p‐type poly‐Si. It is hypothesized that the distinct difference in the firing impact on p‐ and n‐type poly‐Si is related to the different effective hydrogen diffusivity, which determines the hydrogen content surrounding the SiOx layer and hence the passivation quality after firing.

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Characterization of surface processes during oxide CMP by in situ FTIR spectroscopy

Cited by 2 publications

References 81 publications

Characterization of Pad–Wafer Contact Area and Distance in Chemical-Mechanical Polishing

Characterization of Pad–Wafer Contact Area and Distance in Chemical-Mechanical Polishing

Comparison of firing stability between p‐ and n‐type polysilicon passivating contacts

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