Characterization of Surface Variation of Chemically Amplified Photoresist to Evaluate Extreme Ultraviolet Lithography Stochastics Effects

Atomistic Modeling Approach for Predicting Association of Photoacid Generators in Extreme Ultraviolet Polymeric Photoresists

“…The results in Figure and Figure S20 in the SI show an increase of about 15.5 and 4 kcal/mol in ΔG S and ΔG D barriers, respectively, compared to the PtBMA homopolymer. This suggests that PS segments in any polymer medium will hinder the dispersibility of ionic PAGs, which is consistent with reported experimental observation of a higher fraction of perfluoro ionic PAG aggregates in a polymer containing PS and/or acrylic segments. , …”

“…This suggests that PS segments in any polymer medium will hinder the dispersibility of ionic PAGs, which is consistent with reported experimental observation of a higher fraction of perfluoro ionic PAG aggregates in a polymer containing PS and/or acrylic segments. 20,63 In the second consistency test, we calculated the effective dipole moment of the single nonionic and associated ionic PAGs in implicit and explicit solvation media from DFT methods (see Section II.E for more details) where a higher dipole moment in low-polar solvation medium would be expected to correlate with higher ΔG D barriers from HREX MD simulations. A similar trend was also observed in a saltdoped polymer electrolyte system where decreasing the polymer polarity led to the formation of larger Li-TFSi aggregates.…”

Chemically Amplified Molecular Glass Photoresist Regulated by 2-Aminoanthracene Additive for Electron Beam Lithography and Extreme Ultraviolet Lithography

“…In order to comprehensively understand the effect of photoresist formulation on LWR, power density spectrum (PSD) was used to analyze the roughness and gave more detailed information on photolithography patterns, which can provide theoretical guidance for the design of new photoresists. − PSD regards roughness as noise and studies the spatial variation period of roughness with the length of the line or trench. PSD function describes the random process of line edge profile waveform from the perspective of frequency domain, decomposes the surface profile into different Fourier components, and can reflect most of the information on line edge spatial frequency characteristics.…”

Modular Synthesis of Phthalaldehyde Derivatives Enabling Access to Photoacid Generator-Bound Self-Immolative Polymer Resists with Next-Generation Photolithographic Properties

“…It emerges from a combination of photon and material stochastics, including deprotection efficiency and dark loss . A strong correlation between surface roughness and line edge roughness has been repeatedly demonstrated across multiple forms of exposure and processing conditions. − Measuring surface roughness after coating and comparing it to the roughness after exposure and development allows the inhomogeneity induced by the resist’s initial non-uniformity and adhesion to the substrate to be decoupled from stochastics caused by the efficiency of the resist’s chemical amplification reaction as well as reaction disparities driven by dark loss . We conducted surface roughness measurements on PA 3 before coating and after development and compared these with unfunctionalized PPA mixed with an equivalent 10 mol % of PAG 3 .…”

“…83−86 Measuring surface roughness after coating and comparing it to the roughness after exposure and development allows the inhomogeneity induced by the resist's initial non-uniformity and adhesion to the substrate to be decoupled from stochastics caused by the efficiency of the resist's chemical amplification reaction as well as reaction disparities driven by dark loss. 86 We conducted surface roughness measurements on PA 3 before coating and after development and compared these with unfunctionalized PPA mixed with an equivalent 10 mol % of PAG 3. The root mean square (RMS) values in Table 1 indicate that both the PAG-tethered and PAG-blended systems exhibited outstanding film formation behavior.…”