2011
DOI: 10.1007/978-1-4419-8198-1
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Characterization of Terahertz Emission from High Resistivity Fe-doped Bulk Ga0.69In0.31As Based Photoconducting Antennas

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Cited by 4 publications
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“…These spectral bandwidths are comparable to the values measured for the InP PC THz emitters. The emitted THz electric field amplitude is estimated according to 44 …”
Section: Resultsmentioning
confidence: 99%
“…These spectral bandwidths are comparable to the values measured for the InP PC THz emitters. The emitted THz electric field amplitude is estimated according to 44 …”
Section: Resultsmentioning
confidence: 99%
“…The design in the normal bulk material and the microwave region shows intrinsic impedance losses 41 .Physics of bulk material depends on the carrier dynamics for example Fe doped in bulk GaInAs 42 .Carrier lifetime should be ultrashort in these materials for possible photoconductive switching. It is found that Fe doped GaInAs is highly resistive and has sub picoseconds carrier lifetime 42 . Permittivity and permeability can be controlled by static E and H field consecutively in Ferroelectric bulk material 43 .…”
Section: Comparison Of Modelling Graphene Antenna With Normal Bulk Materials Antennamentioning
confidence: 99%
“…THz pulses are also generated through optical rectification, a nonlinear optical process based on degenerate difference frequency mixing [30]. Both methods require an ultrafast (~100 fs) optical laser source to drive the processes.…”
Section: Generation and Detection Of Thz Pulsesmentioning
confidence: 99%