2015
DOI: 10.1016/j.jallcom.2015.07.236
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Characterization of ternary (Ni,Co,Mn)3O4 thin films for microbolometer applications

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Cited by 13 publications
(12 citation statements)
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“…The detailed information of the grain size of the annealed films is listed in Table 1. In addition, Figure 3(a-c) indicates an increase in grain size with respect to the Cu adding, similar to the case of the Comodified (Ni,Mn) 3 O 4 films [20]. As the grain was enlarged, the film surface became rougher.…”
Section: Microstructure and Crystal Structure Of Films Annealed At 400 °Csupporting
confidence: 60%
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“…The detailed information of the grain size of the annealed films is listed in Table 1. In addition, Figure 3(a-c) indicates an increase in grain size with respect to the Cu adding, similar to the case of the Comodified (Ni,Mn) 3 O 4 films [20]. As the grain was enlarged, the film surface became rougher.…”
Section: Microstructure and Crystal Structure Of Films Annealed At 400 °Csupporting
confidence: 60%
“…The best value, 200 Ω cm, achieved when x = 0.025 was far lower than 6,300 Ωcm for the Cu-free sample, demonstrating an improved conductivity for the films. Furthermore, the specific resistivity value (200 Ω cm) corresponds to the Cu substitution of only 2.5 mol%, was much lower than those of the nickel-manganite films (ρ > 600 Ωcm), modified with 6.5 ~ 8.2 mol% Co, via the same route [20]. This result gave the evidence of stronger effects of the copper substitution on the conductive behavior of nickel-manganite films, when compared to that of cobalt.…”
Section: Electrical Propertiesmentioning
confidence: 83%
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