Characterization of thallium bromide nuclear detectors

Shah, K.S.; Olschner, F.; Moy, L.; Lund, J.C.; Squillante, Michael R.

doi:10.1016/0168-9002(90)90747-t

Cited by 39 publications

(25 citation statements)

References 4 publications

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“…In [4] it was shown that multipass horizontal zone refining of commercially available material (99,99%) is able to greatly improve the purity of TlBr crystals. Using crystals grown by the "Bridgman-Stockbarger" technique it has been possible to produce radiation detectors of area 2 mm and thickness 0.1 mm with energy resolutions of 1.5 keV at 5.9 keV [5]. In addition, [6], [7] also used multipass zone refining before the growth of TlBr crystals by the traveling molten zone method.…”

Section: Introductionmentioning

confidence: 99%

Single detectors and pixel arrays based on TlBr

Gostilo

Owens

Bavdaz

et al. 2002

IEEE Trans. Nucl. Sci.

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TlBr crystals, grown by hydrothermal and "Bridgman-Stockbarger" methods, were investigated as potential single and pixel detectors of X-and gamma radiation. Technology of detectors manufactured from TlBr crystals is reported. The spectra of the radionuclides Fe-55, Am-241, Cd-109, Co-57, and Cs-137, measured by single TlBr detectors are presented. Full-width at half-maximum (FWHM) energy resolutions of 500 eV at 5.9 keV; 518 eV at 9.87 keV; 670 eV at 13.92 keV; 777 eV at 22.1 keV; 2.7 keV at 59.5 keV; 3.7 keV at 88 keV; 4.4 keV at 122 keV, and 29 keV at 662 keV have been achieved. Small format (3 3) pixel detectors with pads 0.35 0.35 mm and gap 0.1 mm were also fabricated on single TlBr crystals of dimensions 2.7 2.7 1.0 mm 3 . The interpixel resistivities measured at a bias of 50 V were 400-600 GOhm. The pixel leakage currents at a bias of 250 V were typically less than 0.5 nA. The best spectra were obtained at a temperature of 30 C, a shaping time constant of 6 s and high voltage of 400 V. Energy resolutions of 2.2, 3.0, 3.7 and 29 keV were measured at input energies of 59.5, 88, 122, and 662 keV, respectively. Values of have been evaluated for two different ingots produced by the "Bridgman-Stockbarger" method. They are = 2 5 10 4 cm 2 V 1 and 10 6 cm 2 V 1for one ingot at 30 C and = 7 10 5 cm 2 V 1 , and = 1 5 10 5 cm 2 V 1 for the other ingot at 10 C.

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Section: Introductionmentioning

confidence: 99%

Single detectors and pixel arrays based on TlBr

Gostilo

Owens

Bavdaz

et al. 2002

IEEE Trans. Nucl. Sci.

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“…Thallium bromide (TlBr) has many attractive properties as a γ-ray detector in application such as homeland security, astrophysics, and medical x-ray imaging [1]. The density of TlBr is 7.5 g/cm 3 which is higher than that for all common semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Investigation of TlBr detector response under high-flux x-rays

et al. 2007

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Thallium bromide (TlBr) is a compound semiconductor with high density, high atomic numbers and wide bandgap. In addition, recent results indicate that the mobility-lifetime product of electrons can be quite high, approaching the values for CdTe and CZT. These properties make TlBr a very promising material for nuclear radiation detector at room temperature. In this paper we report on our investigation of the performance of planar TlBr detector under high flux x-rays irradiation. This study proposes an alternate contact method that reduces the polarization effects, and the afterglow for a wide range of high flux applications.

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“…[Z], (b) energia de banda proibida [Eg] larga e (c) valor do produto da mobilidade por tempo de vida [µτ] deve ser alto (6,7) . O semicondutor deve ser selecionado de acordo com o material e propriedades elétricas que melhor combinarem com as características das medidas da radiação que se deseja avaliar, isto é, partículas carregadas (preferindo-se materiais com Z baixo) ou radiações eletromagnéticas (materiais com Z alto) (2,8) .…”

Section: Introductionunclassified

“…O processo para obtenção do detector de radiação envolve: (a) purificação do material de partida, (b) crescimento do cristal, (c) preparação da superfície, (d) deposição dos eletrodos, (e) montagem sobre um substrato rígido e (f) encapsulamento. Cada um desses estágios afeta a qualidade cristalina e pode introduzir defeitos e imperfeições, deteriorando a resposta do detector de radiação (5,7,9) . Para fabricação de detectores a partir destes compostos semicondutores é essencial dominar a metodologia dos processos de purificação e crescimento destes cristais.…”

Section: Introductionunclassified

Desenvolvimento do cristal semicondutor de iodeto de mercúrio para aplicação como detector de radiação

Martins¹

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Characterization of thallium bromide nuclear detectors

Cited by 39 publications

References 4 publications

Single detectors and pixel arrays based on TlBr

Single detectors and pixel arrays based on TlBr

Investigation of TlBr detector response under high-flux x-rays

Desenvolvimento do cristal semicondutor de iodeto de mercúrio para aplicação como detector de radiação

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