Characterization of the Diamond Wire Sawing Process for Monocrystalline Silicon by Raman Spectroscopy and SIREX Polarimetry

Würzner, Sindy; Herms, M.; Kaden, Thomas A.; Möller, Hans Joachim; Wagner, Matthias

doi:10.3390/en10040414

Cited by 21 publications

(2 citation statements)

References 11 publications

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“…In the MDWS process, surface quality is a crucial indicator for assessing its quality and process efficiency. This, in turn, directly impacts the subsequent processing costs [42,43]. SiC has covalent Si and C bonds with two different polarities of Si and C-face, leading to notable variations in its physical, chemical, and electrical properties [44].…”

Section: Surface Roughnessmentioning

confidence: 99%

Assessment of Sustainable and Machinable Performance Metrics of Monocrystalline Silicon Carbide Wafer with Electrophoretic Assisted Multi-Diamond Wire Sawing

Sefene,

Chen,

Tsai

et al. 2024

Preprint

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The rapacious demand for energy in semiconductor wafer manufacturing industries has significant implications for global warming and wafer manufacturing costs. Assessing sustainability in the multi-diamond wire sawing (MDWS) process is crucial for reducing costs and mitigating environmental impacts. However, sustainability assessment integrated with machinability performance metrics in this process has not been investigated. This novel study extensively analyzes sustainability metrics such as processing time, energy consumption, carbon dioxide emission, machining cost, and machinability characteristics, including surface roughness, diamond wear rate, and sawing temperature in monocrystalline silicon carbide (mono-SiC) sawing process. Experiments were conducted using traditional MDWS (T-MDWS), reactive MDWS (R-MDWS), and electrophoretic-assisted reactive MDWS (ER-MDWS) coolants. An autoregressive integrated moving average (ARIMA) model were used to predict the overall energy consumption of the MDWS machine. Results showed significant improvements across various responses such as processing time, energy consumption, carbon dioxide emissions, machining cost, surface roughness, diamond wear rate, and sawing temperature, with reductions of 2.95%, 3.87%, 6.80%, 12.82%, 4.68%, 16.32%, and 4.39%, respectively. Furthermore, the ARIMA model results indicate that the total energy consumption prediction accuracy reaches 98.813%. The findings demonstrated that the ER-MDWS cooling strategy is well-suited for large-scale wafer production without compromising surface quality while minimizing environmental impact.

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Section: Surface Roughnessmentioning

confidence: 99%

Assessment of Sustainable and Machinable Performance Metrics of Monocrystalline Silicon Carbide Wafer with Electrophoretic Assisted Multi-Diamond Wire Sawing

Sefene,

Chen,

Tsai

et al. 2024

Preprint

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“…Würzner et al studied the residual stress on the surface layer of silicon wafers sawn by fixed diamond wire sawing using Raman characterization. Their experimental results show that higher wire speed leads to lower residual stress, but with more amorphous silicon formation [ 11 ]. Yang et al used the infrared polariscope method to measure the residual stress on the surface of the full-size wafer, and studied the effects of residual stress and surface defects on the fracture strength of silicon wafers [ 12 ].…”

Section: Introductionmentioning

confidence: 99%

The Influence of Wire Speed on Phase Transitions and Residual Stress in Single Crystal Silicon Wafers Sawn by Resin Bonded Diamond Wire Saw

Liu

2021

Micromachines

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Lower warp is required for the single crystal silicon wafers sawn by a fixed diamond wire saw with the thinness of a silicon wafer. The residual stress in the surface layer of the silicon wafer is the primary reason for warp, which is generated by the phase transitions, elastic-plastic deformation, and non-uniform distribution of thermal energy during wire sawing. In this paper, an experiment of multi-wire sawing single crystal silicon is carried out, and the Raman spectra technique is used to detect the phase transitions and residual stress in the surface layer of the silicon wafers. Three different wire speeds are used to study the effect of wire speed on phase transition and residual stress of the silicon wafers. The experimental results indicate that amorphous silicon is generated during resin bonded diamond wire sawing, of which the Raman peaks are at 178.9 cm−1 and 468.5 cm−1. The ratio of the amorphous silicon surface area and the surface area of a single crystal silicon, and the depth of amorphous silicon layer increases with the increasing of wire speed. This indicates that more amorphous silicon is generated. There is both compressive stress and tensile stress on the surface layer of the silicon wafer. The residual tensile stress is between 0 and 200 MPa, and the compressive stress is between 0 and 300 MPa for the experimental results of this paper. Moreover, the residual stress increases with the increase of wire speed, indicating more amorphous silicon generated as well.

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On the Bulk Photovoltaic Effect in the Characterization of Strained Germanium Microstructures

Zaitsev,

Spirito,

Frigerio

et al. 2024

Physica Rapid Research Ltrs

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Strain engineering serves as an effective method for optimizing electronic and optical properties in semiconductor devices, with applications including the enhancement of optical emission in Ge and GeSn‐based devices, improvement of carrier mobility, and second harmonic generation in silicon photonics structures. Current methods for deformation characterization in semiconductors, such as X‐ray diffraction and Raman spectroscopy, often require bulky and expensive setups and are limited in vertical resolution. Consequently, techniques capable of measuring lattice strain while overcoming these drawbacks are highly desirable. This study proposes a proof of concept for a cost‐effective, compact, fast, and non‐destructive approach to probe non‐uniform strain fields and additional material properties by exploiting the bulk photovoltage effect. The method is benchmarked with an array of silicon nitride stripes deposited under varying pressure conditions on a germanium substrate. Initially, their surface strains are verified through Raman spectroscopy. The deformations are replicated in a finite element method platform by integrating mechanical simulations with deformation potential theory, thereby estimating the band edge energy landscape. Finally, the study discusses the theoretical behavior of the photovoltage signal, considering semiconductor properties, defects, doping, and deformation. The findings offer insights into the development of advanced techniques for strain and transport analysis in semiconductor materials.

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Characterization of the Diamond Wire Sawing Process for Monocrystalline Silicon by Raman Spectroscopy and SIREX Polarimetry

Cited by 21 publications

References 11 publications

Assessment of Sustainable and Machinable Performance Metrics of Monocrystalline Silicon Carbide Wafer with Electrophoretic Assisted Multi-Diamond Wire Sawing

Assessment of Sustainable and Machinable Performance Metrics of Monocrystalline Silicon Carbide Wafer with Electrophoretic Assisted Multi-Diamond Wire Sawing

The Influence of Wire Speed on Phase Transitions and Residual Stress in Single Crystal Silicon Wafers Sawn by Resin Bonded Diamond Wire Saw

On the Bulk Photovoltaic Effect in the Characterization of Strained Germanium Microstructures

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