Characterization of the Electronic Mobility Dependence on Frequency and Bias in AsGa Devices

Abstract

In this paper, a novel technique to study the evolution of the electronic mobility in GaAs microwave MESFET's devices versus both, frequency and bias condition is presented. The technique employs scattering parameters measurement over the frequency band of interest along with DC and Pulsed transconductance and output conductance device measurements. The examination of the presented results shows the need to include the variation of mobility with DC bias and frequency in device nonlinear models.