Characterization of the interfacial reaction between sputter-deposited Ni film and Si substrate

Zhou, Rong; Chen, C.C.; Hashimoto, Mituru; Shi, Ji; Nakamura, Yoshio

doi:10.1007/s00339-003-2448-2

Cited by 5 publications

(1 citation statement)

References 18 publications

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“…The significant decrease in intensity of the NiSi peaks ͓especially the ͑112͒ peak͔ for the Ni 0.8 Tb 0.2 -silicided gate stack is indicative of a decrease in the crystalline quality in the film. 15 As it was reported that a decrease in the crystallinity of metal films reduces the gate work function, 16 a similar change in the NiSi layer could have lowered the Ni͑Tb͒Si gate work function. The structural change in NiSi could have been influenced by the formation of Ni-Tb intermetallic phases during silicidation, as reported for an alloy of a rare earth and near-noble metal ͑Pd-Er alloy͒.…”

Section: Resultsmentioning

confidence: 96%

Full Silicidation of Silicon Gate Electrodes Using Nickel-Terbium Alloy for MOSFET Applications

Lim

Lee

Tung

et al. 2006

J. Electrochem. Soc.

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The full silicidation of silicon gate electrodes using Ni-Tb alloy was investigated for metal oxide semiconductor field effect transistor ͑MOSFET͒ applications. Results showed that a dual-layer silicide gate consisting of a top NiTb silicide layer and a bottom NiSi layer was formed. Full silicidation using Ni 0.8 Tb 0.2 resulted in a gate work function of 4.41 eV. This is lower than a work function of 4.68 eV obtained from full Ni silicidation. The work function lowering was linked to structural changes in the underlying NiSi layer. No physical or electrical degradation was observed after forming gas annealing at 420°C for 30 min. NiTb-silicided gate electrodes have work functions suitable for application in advanced transistor structures.Due to aggressive scaling of complementary metal-oxidesemiconductor ͑CMOS͒ devices, metal gates electrodes are required for replacing conventional poly-Si gates to overcome polydepletion and dopant penetration problems. 1 However, in selecting suitable metal gate materials, their work functions must be considered to control the transistor's threshold voltage ͑V TH ͒. 2,3 To obtain low and symmetrical V TH for optimal device performance, the gate work function must be close to the conduction and valence bands for nand p-channel bulk CMOS transistors, respectively, or about 0.2 eV above and below the intrinsic Si Fermi level for advanced transistor structures ͑surround-gate or double-gate transistors͒. 2 In recent years, fully-silicided ͑FUSI͒ NiSi has become an attractive metal electrode candidate because of its compatibility with the current CMOS process and its tunable work function. 4-8 It was demonstrated that a wide work function range ͑4.29-4.99 eV͒ for NiSi can be obtained by the total silicidation of doped poly-Si gates using various dopants ͑e.g., As, P, and B͒. 8 Alternatively, the formation of a FUSI ternary silicide with Ni and a second metal is another attractive work function tuning method. For example, Co x Ni 1−x Si 2 was reported by Sim and co-workers to show a linear work function tunability from the intrinsic Si Fermi level to ϳ0.2 eV above it. 9 In addition, it was also proven that by incorporating a large concentration of Pt ͑ϳ33%͒ into a ternary silicide with Ni, a suitable p-MOS metal gate work function can be obtained. 10 Still, the prospect of forming ternary silicides using a Ni-rare earth metal alloy for lower work function modulation has not been explored. Terbium ͑Tb͒, which is one of the rare-earth ͑or lanthanide͒ group of elements, has been reported to possess a low work function ͑ϳ3.0 eV͒. 11 In this study we investigated the effect of alloying Ni with Tb for FUSI metal gate applications. Experimentalp-Type Si͑100͒ substrates were used for FUSI MOS capacitor fabrication. After standard pregate cleaning, a SiO 2 gate dielectric ͑10 nm͒ was thermally grown and etched to obtain different thicknesses for work function extraction. Undoped amorphous Si ͑60 nm͒ was deposited by low-pressure chemical vapor deposition. The Si gate was then patterned and Ni ...

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Section: Resultsmentioning

confidence: 96%

Full Silicidation of Silicon Gate Electrodes Using Nickel-Terbium Alloy for MOSFET Applications

Lim

Lee

Tung

et al. 2006

J. Electrochem. Soc.

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Formation of Crystalline and Amorphous Phases During Deposition of Ni _x Ti _1‐x Thin Film on Si Substrate ‐ Interpretation of Experimental Results Using Molecular Dynamics Simulations

Aich

Priyadarshini

Gupta

et al. 2012

Supplemental Proceedings

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NiSi Tb alloy interlayer properties at NiSi/Si junctions for improving thermal stability and contact resistance

Babu

Song

et al. 2021

Microelectronic Engineering

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Characterization of the interfacial reaction between sputter-deposited Ni film and Si substrate

Cited by 5 publications

References 18 publications

Full Silicidation of Silicon Gate Electrodes Using Nickel-Terbium Alloy for MOSFET Applications

Full Silicidation of Silicon Gate Electrodes Using Nickel-Terbium Alloy for MOSFET Applications

Formation of Crystalline and Amorphous Phases During Deposition of Ni _x Ti _1‐x Thin Film on Si Substrate ‐ Interpretation of Experimental Results Using Molecular Dynamics Simulations

NiSi Tb alloy interlayer properties at NiSi/Si junctions for improving thermal stability and contact resistance

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Characterization of the interfacial reaction between sputter-deposited Ni film and Si substrate

Cited by 5 publications

References 18 publications

Full Silicidation of Silicon Gate Electrodes Using Nickel-Terbium Alloy for MOSFET Applications

Full Silicidation of Silicon Gate Electrodes Using Nickel-Terbium Alloy for MOSFET Applications

Formation of Crystalline and Amorphous Phases During Deposition of Ni x Ti 1‐x Thin Film on Si Substrate ‐ Interpretation of Experimental Results Using Molecular Dynamics Simulations

NiSi Tb alloy interlayer properties at NiSi/Si junctions for improving thermal stability and contact resistance

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Formation of Crystalline and Amorphous Phases During Deposition of Ni _x Ti _1‐x Thin Film on Si Substrate ‐ Interpretation of Experimental Results Using Molecular Dynamics Simulations