Characterization of the nitrogen state in HPHT diamonds grown in an Fe–C melt with a low sulfur addition

Abstract

This paper reports the results of high-pressure high-temperature (HPHT) diamonds growing in an Fe–C melt with introduction of 1 wt% sulfur.

Relationship between Co-related optical centres and nitrogen impurities in large single crystals of diamond grown in Co–C system under HPHT conditions

“…The effects of annealing and elemental doping on diamonds have been reported recently. For example, Denis Bogdanov et al 4 proposed that detonation nanodiamond cores grow in the form of graphite and diamond phases after annealing at a pressure of 5 GPa and a temperature of 1100–1500 °C; A. P. Yelisseyev et al 5 characterized a significant reduction in nitrogen in HPHT diamonds grown in Fe–C melts with low sulfur additions; Y. N. Palyanov et al 6 introduced the method of high-pressure synthesis of silicon diamond doped in Mg–Si–C system, and studied the influence of silicon on diamond crystal and spectral characteristics. For the optical centres in diamond, the effects of nitrogen concentration on the optical centres of Ib-type diamonds grown in FeNi alloys has been studied previously; 7 the successful entry of silicon into the diamond lattice as Si–C bonds in crystals synthesised with SiC as an additive in the FeNi–C system, laying the groundwork for further studies on the formation of Si–V colour centres; 8 and Miao et al have studied the PL spectra of B-rich diamonds grown in NiMnCo solvent before and after annealing and analysed the effect of boron doping and HPHT annealing on the optical centres of diamonds containing both Ni, Co, B and N impurities.…”