Characterization of the temperature sensitivity of gain and recombination mechanisms in 1.3-/spl mu/m AlGaInAs MQW lasers

Houle, T.J.; Yong, J.C.L.; Marinelli, C.; Yu, S.; Rorison, Judy M; White, IH; White, J.K.; SpringThorpe, A. J.; Garrett, B.

doi:10.1109/jqe.2004.840450

Cited by 33 publications

(15 citation statements)

References 36 publications

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“…This conclusion is consistent with measurements of the monomolecular recombination coefficient on the related GaInNAs/ GaAs material system. 13 Using a differential carrier lifetime technique based on impedence matching, 14 an order of magnitude increase over conventional GaAs and InP based materials was recorded.…”

Section: Results: Gain Dynamicsmentioning

confidence: 99%

Ultrafast gain and refractive index dynamics in GaInNAsSb semiconductor optical amplifiers

Piwoński¹,

Pulka²,

Madden³

et al. 2009

Journal of Applied Physics

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The gain and refractive index dynamics of dilute nitride antimonide semiconductor optical amplifiers are studied using heterodyne pump probe spectroscopy, both in forward and reverse bias regimes. In the forward biased absorption regime, both gain and refractive index relax on the same timescale indicating that both quantities are linked to the same relaxation process, interband recombination. Above transparency, in the forward biased gain regime, the gain and phase exhibit differing timescales resulting in a dynamical alpha factor that varies strongly with time. Reversed bias measurements suggest a recombination dominated absorption recovery where the recovery timescale increases with increasing reversed bias, possibly due to charge separation effects.

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Section: Results: Gain Dynamicsmentioning

confidence: 99%

Ultrafast gain and refractive index dynamics in GaInNAsSb semiconductor optical amplifiers

Piwoński¹,

Pulka²,

Madden³

et al. 2009

Journal of Applied Physics

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“…9 However, it is comparable to the value of 1.9 cm −1 / mA measured in AlGaInAs/ InP lasers. 10 The peak wavelength of modal gain as a function of subthreshold current is also plotted in Fig. 4.…”

Section: Resultsmentioning

confidence: 99%

“…The usual blueshift of the maximum gain over the bias current is observed, where the average rate of the shift is −0.25 nm/ mA. Compared to the strong blueshift of −1 nm/ mA to − 3 nm/ mA in 1.3 m AlGaInAs-InP, InGaAsP-InP, and highly strained InGaAs-GaAs QW structures, [9][10][11] these GaInNAs/ GaAs QWs exhibit a weaker band filling effect. Figure 5 depicts the full width at half maximum ͑FWHM͒ of the gain spectra as a function of subthreshold current measured at 30 and 50°C, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…This result is similar to the InP-based and highly strained InGaAs-GaAs materials, in which the peak modal gain increased at rates of 0.3-0.5 nm/°C. [9][10][11] The significant redshift of the peak modal gain is associated with the temperature-induced band gap shrinkage. Beside the redshift, the peak modal gain decreases at an average rate of −0.15 cm −1 /°C as the temperature increases over this 20°C interval.…”

Section: Resultsmentioning

confidence: 99%

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Gain spectra of 1.3μm GaInNAs laser diodes

Zhang

Gupta

Barrios

et al. 2006

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Access and use of this website and the material on it are subject to the Terms and Conditions set forth at Gain spectra of 1.3 μm GaInNAs laser diodes Zhang, X.; Gupta, J. A.; Barrios, P. J.; Pakulski, G.; Wu, X.; Delâge, A.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=fr L'accès à ce site Web et l'utilisation de son contenu sont assujettis aux conditions présentées dans le site LISEZ CES CONDITIONS ATTENTIVEMENT AVANT D'UTILISER CE SITE WEB. NRC Publications Record / Notice d'Archives des publications de CNRC:http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?lang=en http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?lang=fr READ THESE TERMS AND CONDITIONS CAREFULLY BEFORE USING THIS WEBSITE.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=en Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Questions? Contact the NRC Publications Archive team atPublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://doi.org/10.1116/1.2186662 A, 24, 3, pp. 787-790, 2006-05 We present an experimental investigation of the optical gain properties of 1.3 m GaInNAs double quantum well ridge waveguide laser diodes. High-resolution gain spectra versus injection current and temperature were obtained by measuring the modulation depth introduced into the spontaneous emission spectrum by the Fabry-Pérot resonances. As the injection current increases, the modal gain spectral peak experiences a small blueshift over the photon energy, and the magnitude increases asymptotically, saturating at the lasing threshold level of 24.4 cm −1 . The peak of the modal gain spectra exhibits a redshift with an average rate of 0.58 nm/°C as the temperature increases from 30 to 50°C. For wavelengths corresponding to photon energy below the band gap, the modal gain spectra converge to the internal loss of 7 cm −1 . The full width at half maximum of the gain spectrum is 41.1 meV at 30°C, 40 mA and increases with injection current at a rate of 0.42 meV/ mA. The high optical gain and low internal loss indicate that GaInNAs is a promising active material for long wavelength laser diodes. Journal of vacuum science and technology

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“…There are, however, relatively few reports on 1.55 µm InGaAlAs BH lasers [3][4][5][6]. Semiconductor lasers emitting at 1.55 µm are the most desired light sources for high speed optical transmission due to the lowest loss window region of silica-based fiber optics occurring around this wavelength [7]. Conventional InGaAsP/InP based QW lasers are inefficient as at these wavelengths their characteristics have relatively high temperature sensitivity.…”

Section: Introductionmentioning

confidence: 99%

Thermal performance of 1.55μm InGaAlAs quantum well buried heterostructure lasers

Sayid

Marko

Cannard³

et al. 2010

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

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Abstract-We have investigated the threshold current I th and differential quantum efficiency as the function of temperature in InGaAlAs/InP multiple quantum well (MQWs) buried heterostructure (BH) lasers. We find that the temperature sensitivity of I th is due to non-radiative recombination which accounts for up to ~80% of J th at room temperature. Analysis of spontaneous emission emitted from the devices show that the dominant non-radiative recombination process is consistent with Auger recombination. We further show that the above threshold differential internal quantum efficiency, i η , is ~80% at 20°C remaining stable up to 80°C . In contrast, the internal optical loss, i α , increases from 15 cm -1 at 20°C to 22 cm -1 at 80°C, consistent with inter-valence band absorption (IVBA). This suggests that the decrease in power output at elevated temperatures is associated with both Auger recombination and IVBA.

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Characterization of the temperature sensitivity of gain and recombination mechanisms in 1.3-/spl mu/m AlGaInAs MQW lasers

Cited by 33 publications

References 36 publications

Ultrafast gain and refractive index dynamics in GaInNAsSb semiconductor optical amplifiers

Ultrafast gain and refractive index dynamics in GaInNAsSb semiconductor optical amplifiers

Gain spectra of 1.3μm GaInNAs laser diodes

Thermal performance of 1.55μm InGaAlAs quantum well buried heterostructure lasers

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Characterization of the temperature sensitivity of gain and recombination mechanisms in 1.3-/spl mu/m AlGaInAs MQW lasers

Cited by 33 publications

References 36 publications

Ultrafast gain and refractive index dynamics in GaInNAsSb semiconductor optical amplifiers

Ultrafast gain and refractive index dynamics in GaInNAsSb semiconductor optical amplifiers

Gain spectra of 1.3μm GaInNAs laser diodes

Thermal performance of 1.55&#x03BC;m InGaAlAs quantum well buried heterostructure lasers

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Thermal performance of 1.55μm InGaAlAs quantum well buried heterostructure lasers