1996
DOI: 10.1016/0040-6090(95)08505-x
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Characterization of thin buffer layers for strongly mismatched heteroepitaxy

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Cited by 7 publications
(4 citation statements)
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“…They were grown by conventional metal-organic vapor-phase epitaxy in the low-pressure mode. 18 After depositing an InP buffer layer on top of the semi-insulating InP substrate the In 0.53 Ga 0.47 As/InP MQW's were grown. The well thickness L W was nominally 8 nm for both samples, whereas the nominal barrier thickness L B was 10 nm for sample I and 6.6 nm for sample II.…”
Section: Methodsmentioning
confidence: 99%
“…They were grown by conventional metal-organic vapor-phase epitaxy in the low-pressure mode. 18 After depositing an InP buffer layer on top of the semi-insulating InP substrate the In 0.53 Ga 0.47 As/InP MQW's were grown. The well thickness L W was nominally 8 nm for both samples, whereas the nominal barrier thickness L B was 10 nm for sample I and 6.6 nm for sample II.…”
Section: Methodsmentioning
confidence: 99%
“…Comparing the two curves of the optical absorption coefficient in figure 1(a), we find that the optical absorption in GaAs/Si is much larger than that in the GaAs bulk below the bandgap. The optical absorption below the bandgap is caused by the metamorphic layers of GaAs/Si, rather than the Si substrate [23,24]. The high-density dislocations and rough surfaces are the main reason for the optical absorption.…”
Section: Optical Absorption Of Metamorphic Layers On Siliconmentioning
confidence: 99%
“…The dislocations degrade the internal quantum efficiency of the active regions. However, another important issue easily ignored is the optical loss resulting from the dislocations through the mechanism of the electric micro-field at dislocation cores and optical scattering [23][24][25].…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, it is reasonable to consider an average dislocation to be effective for optical absorption. For a 2-pm-thick layer as in the case of sample #633 an average dislocation density of Kls = 2x109 cm-2 can be calculated from the measured dislocation-density depth profile [6,9]. Figure 1 c shows the absorption coefficient of two representative layers.…”
Section: Resultsmentioning
confidence: 99%