Characterization of threading dislocations in GaN (0001) substrates by photoluminescence imaging, cathodoluminescence mapping and etch pits

Yao, Yongzhao; Ishikawa, Yukari; Sudo, Masaki; Sugawara, Yoshihiro; Yokoe, Daisaku

doi:10.1016/j.jcrysgro.2017.01.017

Cited by 27 publications

(18 citation statements)

References 18 publications

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“…Gallium nitride is chosen to perform numerical applications because of its technological interest for electronic devices that can work under high power density and at relatively high temperature [4,5]. The growth of GaN can be stabilized by epitaxial growth on bulky GaN substrates or a foreign substrate, for example, (111)Si, SiC, or sapphire [2,4,5,15].…”

Section: Application To Ganmentioning

confidence: 99%

“…The growth of GaN can be stabilized by epitaxial growth on bulky GaN substrates or a foreign substrate, for example, (111)Si, SiC, or sapphire [2,4,5,15]. An investigation on GaN thin films is of particular interest because of its TDs that have anisotropic electrical properties regarding cathodoluminescence and photoluminescence.…”

Section: Application To Ganmentioning

confidence: 99%

“…An investigation on GaN thin films is of particular interest because of its TDs that have anisotropic electrical properties regarding cathodoluminescence and photoluminescence. These properties are sensitive to the Burgers vectors and also to the TD directions [5]. The thickness of the GaN layer is assumed to be large enough to neglect the elastic interaction of the TD with the GaN/substrate interface.…”

Section: Application To Ganmentioning

confidence: 99%

“…Epitaxial growth of semiconductor materials offers opportunities in combining and modifying structural and electronic parameters [1][2][3][4][5]. Unfortunately, the thin crystalline film deposited on the substrate often contains high densities of dislocations piercing the free surface, the so-called threading dislocations (TDs), which affect adversely device properties.…”

Section: Introductionmentioning

confidence: 99%

“…These latter are compared to a third approach developed previously for a plate of finite thickness [11] from stress potentials [12]. Since wurtzite gallium nitride (GaN) has attractive optoelectronic applications, such as light emitting diode and laser diodes [1,[3][4][5], this compound is used in the present work to perform numerical applications.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Threading Dislocations Piercing the Free Surface of an Anisotropic Hexagonal Crystal: Review of Theoretical Approaches

Neily

Dhouibi

Bonnet

2018

Advances in Condensed Matter Physics

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Inclined threading dislocations (TDs) piercing the oriented free surface of a crystal are currently observed after growth of oriented thin films on substrates. Up to date the unique way to treat their anisotropic elastic properties nearby the free surface region is to use the integral formalism, which assumes no dislocation core size and needs numerical double integrations. In a first stage of the work, a new and alternative approach to the integral formalism is developed using double Fourier series and the concept of a finite core size, which is often observed in high-resolution transmission electron microscopy. In a second stage, the integral formalism and the Fourier series approaches are applied to the important case of a TD piercing the basal free surface of a hexagonal crystal. For this particular geometry, easy-to-use expressions are derived and compared to a third approach previously known for a plate-like crystal. Finally, the numerical interest and the convergence of these approaches are tested using the basal free surface of the GaN compound, in particular for TDs with Burgers vectors c and (a + c).

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Section: Application To Ganmentioning

confidence: 99%

Section: Application To Ganmentioning

confidence: 99%

Section: Application To Ganmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Threading Dislocations Piercing the Free Surface of an Anisotropic Hexagonal Crystal: Review of Theoretical Approaches

Neily

Dhouibi

Bonnet

2018

Advances in Condensed Matter Physics

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High‐Brightness Blue Light‐Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer

et al. 2018

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Single-crystalline GaN-based light-emitting diodes (LEDs) with high efficiency and long lifetime are the most promising solid-state lighting source compared with conventional incandescent and fluorescent lamps. However, the lattice and thermal mismatch between GaN and sapphire substrate always induces high stress and high density of dislocations and thus degrades the performance of LEDs. Here, the growth of high-quality GaN with low stress and a low density of dislocations on graphene (Gr) buffered sapphire substrate is reported for high-brightness blue LEDs. Gr films are directly grown on sapphire substrate to avoid the tedious transfer process and GaN is grown by metal-organic chemical vapor deposition (MOCVD). The introduced Gr buffer layer greatly releases biaxial stress and reduces the density of dislocations in GaN film and In Ga N/GaN multiple quantum well structures. The as-fabricated LED devices therefore deliver much higher light output power compared to that on a bare sapphire substrate, which even outperforms the mature process derived counterpart. The GaN growth on Gr buffered sapphire only requires one-step growth, which largely shortens the MOCVD growth time. This facile strategy may pave a new way for applications of Gr films and bring several disruptive technologies for epitaxial growth of GaN film and its applications in high-brightness LEDs.

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Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer

Inotsume

Kokubo

Yamada

et al. 2020

Physica Status Solidi (b)

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Threading dislocations (TDs) in the GaN substrate and homoepitaxial layer are nondestructively evaluated using X‐ray topography (XRT), Raman spectroscopy, and multiphoton photoluminescence (MPPL) imaging. When the XRT and Raman mapping images are compared, TDs in the GaN substrate are identified as threading edge dislocations (TEDs), threading mixed dislocations (TMDs), and threading screw dislocations (TSDs). TDs are observed to propagate from the GaN substrate to the epitaxial layer. From MPPL imaging, the TEDs are found to be inclined in the [1true1¯00] direction, which is at 90° from the Burgers vector. The TMD studied in detail is found to be inclined in the [true1¯2true1¯0] direction, which is parallel to the Burgers vector. The feasibility of identifying TDs via analysis of the inclined direction of the dislocations in the GaN epitaxial layer is suggested.

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Characterization of threading dislocations in GaN (0001) substrates by photoluminescence imaging, cathodoluminescence mapping and etch pits

Cited by 27 publications

References 18 publications

Threading Dislocations Piercing the Free Surface of an Anisotropic Hexagonal Crystal: Review of Theoretical Approaches

Threading Dislocations Piercing the Free Surface of an Anisotropic Hexagonal Crystal: Review of Theoretical Approaches

High‐Brightness Blue Light‐Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer

Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer

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