Characterization of through glass via (TGV) RF inductors

Hsieh, Yu-Chang; Chang, Yung-Shun; Lee, Teck Chong; Wang, Chen-Chao

doi:10.1109/impact.2016.7800071

Cited by 11 publications

(3 citation statements)

References 5 publications

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“…While IPD Technology is the high density integration of multiple passive components by etching diverse patterns on silicon, glass, or ceramic substrates utilizing a photolithographic Wafer fabrication technique, can replace bulky discrete passive components. It is classified as Thick-film or Thin-film depending on the passive device fabrication technique [6]. LTCC (Low Temperature Co-fired Ceramics) is a branch of the Thick-film technologies which are widespread and relatively low cost fabrication method of passive components.…”

Section: Integrated Passive Device (Ipd) Technology In Rf Filtermentioning

confidence: 99%

Simulation and discussion of typical radio frequency filters

Chen

2023

J. Phys.: Conf. Ser.

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The demand for filters is increasing as the frequency bands for 5G expand. RF filters become the segment with the largest market share of RF front-end chips. More crowded frequency bands, as well as thinner and lighter communication equipment, necessitate higher filter performance. In this paper, several technologies for the implementation of Radio Frequency filter are presented. Essentially three types are considered: (i) Lumped Element (LC) Filter and Integrated Passive Devices (IPD) technology; (ii) Acoustic Wave Filter; and (iii) a composite filter design that combines acoustic and IPD technologies. Benefits and drawbacks of these diverse configurations in terms of their technical performance and current applications are examined, and several models are presented and simulated using ADS software.

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Section: Integrated Passive Device (Ipd) Technology In Rf Filtermentioning

confidence: 99%

Simulation and discussion of typical radio frequency filters

Chen

2023

J. Phys.: Conf. Ser.

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“…Density (g•cm −3 ) CTE (10 wafers, glass has the characteristics of low dielectric constant and high signal isolation, so it has certain advantages in integrating radio frequency devices. Moreover, glass also has good thermal stability and is cost-effective for large panel size preparation [7][8][9]. However, it is not easy to make fine via on the glass wafers.…”

Section: Componentmentioning

confidence: 99%

Etch the borosilicate glass to form a straight through-glass-via based on the FLACE technology

xu¹,

Fang²,

Zhang³

et al. 2022

J. Micromech. Microeng.

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Interposers will become more and more important for advanced electronic systems and through substrate vias are essential for the 3-D integration. A straight via is necessary because a tapered hole is accompanied by large signal loss. This article reports a straight through-glass-via (TGV) fabricated by femtosecond laser-assisted chemical etching (FLACE). The femtosecond laser was used to modify the glass substrates, and the modified glass samples were etched with hydrofluoric acid (HF) solution to form TGV. The effects of key processing parameters, including laser pulse energy, the number of burst pulses, and the HF solution concentration, on the TGV taper profile, were systematically investigated. It was found that the TGV taper sidewall angle increased decreased with increasing laser pulse energy and HF solution. And the number of bursts should be optimized because more than 10 bursts would prevent the formation of TGV. The study shows via etched in 3wt% HF after irradiation with 3 bursts of 60 μJ can become approximately vertical. Among the three processing parameters, HF concentration was found to be the most crucial parameter. This work can serve as a critical reference for applications of TGV in high-performance 3D integrated circuits.

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“…Based on cylindrical mode expansion approaches, Li et al proposed an accurate wideband model to analyze the electrical properties of high density TGV arrays [8] . Cho et al investigated the effect of TGVs on the thermal performance of the glass interposer [9] . In addition to serving as electrical and heat transfer paths, the TGVs can also be designed as ratiofrequency (RF) passive devices.…”

Section: Introductionmentioning

confidence: 99%

Design of a 3D Wilkinson power divider using through glass via technology

Sang¹,

Qian²,

Xia³

et al. 2018

J. Semicond.

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Due to its low electrical loss and low process cost, a glass interposer has been developed to provide a compelling alternative to the silicon-based interposer for packaging of future 2-D and 3-D ICs. In this study, through glass vias (TGVs) are used to implement 3-D inductors for minimal footprint and large quality factor. Using the inductors and parallel plate capacitors, a compact 3-D Wilkinson power divider is designed and analyzed. Compared with some reported power dividers, the proposed TGV-based circuit has an ultra-compact size and excellent electrical performance.

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Characterization of through glass via (TGV) RF inductors

Cited by 11 publications

References 5 publications

Simulation and discussion of typical radio frequency filters

Simulation and discussion of typical radio frequency filters

Etch the borosilicate glass to form a straight through-glass-via based on the FLACE technology

Design of a 3D Wilkinson power divider using through glass via technology

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