Characterization of tin doped indium oxide films prepared by electron beam evaporation

Whiskers in indium tin oxide films obtained by electron beam evaporation

“…The appearance of interference maxima and minima suggests a reduction of the surface roughness on annealing. Table VI 4,17 The lattice constant decreases slightly when annealing in air, and so does the apparent conductivity of the film. This would indicate that, besides Sn as metallic phase, there are some Sn atoms as interstitials that take the ''normal'' substitutional position in the In sublattice and/or leave the crystal segregating to the surface.…”

“…The optical band gaps are reported to shift to higher energies, this being related to the carrier concentration through the Burstein-Moss shift. 4,7 Frank and coworkers in their study of the properties of sintered ITO powders report a Sn solubility limit of 6Ϯ2 at. % in In 2 O 3 and conclude that all Sn atoms in solution are active donors.…”

“…The presence of In metal observed in ITO films when deposited by sputtering, without oxygen in the discharge, was reported by Andrade and Moehlecke. 1 Banerjee et al 4 concentrate on the effect of T s , oxygen partial pressure ͑2 -8ϫ10 Ϫ5 Torr range͒, and growth rates ͑20-300 Å/min͒ on transmittance and resistance, having obtained the best transmittance/sheet resistance ratio at 300°C, 8ϫ10 Ϫ5 Torr O 2 partial pressure, and grain sizes of 300 to 400 Å. For T s Ͼ250°C, the effect of O 2 partial pressure is thought to limit the concentration of oxygen vacancies, which affects the electrical and optical properties, without affecting either the crystalline phase ͑cubic In 2 O 3 ͒ or the grain size.…”

“…The optical and electrical properties of the resulting compact films have been studied. [4][5][6] Substrate temperature and oxygen partial pressure during deposition have been reported to affect crystalline phase, grain size, electrical conductivity, and optical transmittance of thin films. The presence of In metal observed in ITO films when deposited by sputtering, without oxygen in the discharge, was reported by Andrade and Moehlecke.…”

Characterization and Structural Property of Indium Tin Oxide Thin Films

“…Also ITO thin films find different applications in optoelectronic system, for example, organic light-emitting diodes (OLEDs) [7] [10] [11], transparent electrodes, transparent heating elements, coating electrodes in optoelectronics instruments (flat panel displays (FPDs)), photovoltaic cells, charge-coupled tools, electro-luminescence instruments [12] [13] [14], photo-diodes [15] [16] [17], windows with energy efficient, electro chromic instruments, liquid crystal displays (LCDs) [18], image sensors [19] [20], solar cells [21]- [28], gas sensors, photo crystal and photo electro crystal and heat reflector mirrors [29] [30] [31]. ITO thin films can be produced by different deposition techniques such as direct current (DC) and radio frequency (RF) magnetron sputtering although a variety of production methods have been used for making ITO films [32]- [41], for example electron beam evaporation [42] [43] [44], chemical vapor deposition [45] [46], spray pyrolysis [47] [48] and reactive thermal evaporation [49]. One of the techniques, important for studying physical and structural feature of thin films is X-ray reflectivity (XRR).…”