Characterization of TiN films prepared by a conventional magnetron sputtering system: influence of nitrogen flow percentage and electrical properties

Kawamura, Midori; Abe, Yoshio; Yanagisawa, Hideto; Sasaki, Katsutaka

doi:10.1016/s0040-6090(96)08749-4

Cited by 88 publications

(27 citation statements)

References 18 publications

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“…The electrons in polycrystalline films are considered to be scattered diffusely, therefore p can be neglected ( p ¼ 0). [21] The fitted curve is shown as the solid line in Figure 8, whereby the bulk resistivity is 380 mV cm and the mean free path is calculated as 21 nm, which is in agreement with published values. [21] The effect of the TiN electrodes on the quality of HfO 2 -based MIM capacitors is studied at frequencies up to 1 MHz.…”

supporting

confidence: 87%

“…[21] The fitted curve is shown as the solid line in Figure 8, whereby the bulk resistivity is 380 mV cm and the mean free path is calculated as 21 nm, which is in agreement with published values. [21] The effect of the TiN electrodes on the quality of HfO 2 -based MIM capacitors is studied at frequencies up to 1 MHz. The quality reduction due to finite electrode resistance can be evaluated in a simple way.…”

supporting

confidence: 87%

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Atomic Vapor Deposition of Titanium Nitride as Metal Electrodes for Gate‐last CMOS and MIM Devices

Lukosius

Wenger

Pasko

et al. 2008

Chemical Vapor Deposition

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Pure and diluted Ti[N(Et) 2 ] 4 precursors are used to grow TiN layers at 400-600 -C by using atomic vapor deposition (AVD 1 ). The composition, microstructure, and electrical properties of TiN films with various thicknesses are investigated. The determined work function of 4.7 eV indicates the possibility of using AVD 1 -grown TiN as a metal gate electrode for PMOSFET and metal-insulator-metal (MIM) devices. TiN/HfO 2 /SiO 2 stacks are integrated into gate-last PMOS transistors, and the extracted parameters are compared to poly-Si/SiO 2 reference transistors. The optimized films grown at 400 -C with a thickness of 20 nm exhibit a resistivity of 400 mV cm.

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supporting

confidence: 87%

supporting

confidence: 87%

Atomic Vapor Deposition of Titanium Nitride as Metal Electrodes for Gate‐last CMOS and MIM Devices

Lukosius

Wenger

Pasko

et al. 2008

Chemical Vapor Deposition

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show abstract

“…Resistivities of polycrystalline films are typ- ically in the range of 25-1000 µΩ cm [75,[83][84][85]. Such an increase in resistivity from a single-crystal to a polycrystalline film is due to scattering from the grain boundaries, vacancies and possibly also oxynitrides associated with the polycrystalline TiN [83,86]. Moreover, there is also an influence of the layer thickness and grain size on the resistivity.…”

Section: Electronic and Optical Propertiesmentioning

confidence: 99%

High-resolution characterization of TiN diffusion barrier layers

Mühlbacher¹

2015

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Titanium nitride (TiN) films are widely applied as diffusion barrier layers in microelectronic devices. The continued miniaturization of such devices not only poses new challenges to material systems design, but also puts high demands on characterization techniques. To gain understanding of diffusion processes that can eventually lead to failure of the barrier layer and thus of the whole device, it is essential to develop routines to chemically and structurally investigate these layers down to the atomic scale. In the present study, model TiN diffusion barriers with a Cu overlayer acting as the diffusion source were grown by reactive magnetron sputtering on MgO(001) and thermally oxidized Si(001) substrates. Cross-sectional transmission electron microscopy (XTEM) of the pristine samples revealed epitaxial, single-crystalline growth of TiN on MgO(001), while the polycrystalline TiN grown on Si(001) exhibited a [001]-oriented columnar microstructure. Various annealing treatments were carried out to induce diffusion of Cu into the TiN layer. Subsequently, XTEM images were recorded with a high-angle annular dark field detector, which provides strong elemental contrast, to illuminate the correlation between the structure and the barrier efficiency of the single- and polycrystalline TiN layers. Particular regions of interest were investigated more closely by energy dispersive X-ray (EDX) mapping. These investigations are completed by atom probe tomography (APT) studies, which provide a three-dimensional insight into the elemental distribution at the near-interface region with atomic chemical resolution and high sensitivity. In case of the single-crystalline barrier, a uniform Cu-enriched diffusion layer of 12 nm could be detected at the interface after an annealing treatment at 1000 °C for 12 h. This excellent barrier performance can be attributed to the lack of fast diffusion paths such as grain boundaries. Moreover, density-functional theory calculations predict a stoichiometry-dependent atomic diffusion mechanism of Cu in bulk TiN, with Cu diffusing on the N-sublattice for the experimental N/Ti ratio. In comparison, the polycrystalline TiN layers exhibited grain boundaries reaching from the Cu-TiN interface to the substrate, thus providing direct diffusion paths for Cu. However, the microstructure of these columnar layers was still dense without open porosity or voids, so that the onset of grain boundary diffusion could only be found after annealing at 900 °C for 1 h. The present study shows how to combine two high resolution state-of-the-art methods, TEM and APT, to characterize model TiN diffusion barriers. It is shown how to correlate the microstructure with the performance of the barrier layer by two-dimensional EDX mapping and three-dimensional APT. Highly effective Cu-diffusion barrier function is thus demonstrated for single-crystal TiN(001) (up to 1000 °C) and dense polycrystalline TiN (900 °C)

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“…In the evaluation of the atomic composition of the TiN film by AES, complete separation between the N (KL 2 L 3 ) peak and Ti (L 3 M 2,3 M 2,3 ) peak is difficult because the signals overlap. Thus, the N/Ti atomic ratio in the TiN film was determined from the ratio of the positive excursion for the N (KL 2 L 2 ) peak to the negative excursion for the Ti (L 3 M 2,3 M 4,5 ) peak by comparing it with that of bulk TiN [11]. The resistivity of the film was measured by the four-point probe method.…”

Section: Introductionmentioning

confidence: 99%

“…The resistivity of the film was measured by the four-point probe method. According to the results of Kawamuras group [11], TiN films with a resistivity of 24 mWcm can be prepared at a substrate temperature of 400 °C. The formation process of Ti-N films on 7059 glass substrate was similarly examined at 400 °C by varying the N 2 flow ratio from 0% to 16%.…”

Section: Introductionmentioning

confidence: 99%

Orientational growth of Al(111) caused by interposing Al3Ti layer on a highly oriented TiN(200) film

Oishi

Yanagisawa

Sasaki

et al. 1998

Electron. Comm. Jpn. Pt. II

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Characterization of TiN films prepared by a conventional magnetron sputtering system: influence of nitrogen flow percentage and electrical properties

Cited by 88 publications

References 18 publications

Atomic Vapor Deposition of Titanium Nitride as Metal Electrodes for Gate‐last CMOS and MIM Devices

Atomic Vapor Deposition of Titanium Nitride as Metal Electrodes for Gate‐last CMOS and MIM Devices

High-resolution characterization of TiN diffusion barrier layers

Orientational growth of Al(111) caused by interposing Al3Ti layer on a highly oriented TiN(200) film

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