Characterization of transparent and conducting Sn-doped β-Ga2O3 single crystal after annealing

Ohira, Seiichi; Suzuki, Norihito; Arai, Naoki; Tanaka, Masahiko; Sugawara, Takafumi; Nakajima, Kazuo; Shishido, Toetsu

doi:10.1016/j.tsf.2007.10.083

Cited by 119 publications

(67 citation statements)

References 10 publications

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“…But the band gaps decrease with increasing Sn content. These results are consistent with the reported experimental results [11]. For the crystals, both the total energy and the intra-atomic interactions are determined by the lattice constants.…”

Section: Geometrical Structuressupporting

confidence: 93%

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Electronic structure and optical properties of Sn2x Ga2(1−x)O3 compounds

Yan

Zhang

2011

Sci. China Phys. Mech. Astron.

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Band structure, density of states, electron density difference, and optical properties of intrinsic -Ga 2 O 3 and Sn 2x Ga 2(1x) O 3 (x= 3.125%-6.25%) compounds are studied using first-principle calculations based on the density functional theory. The anisotropic optical properties are investigated by means of the complex dielectric function, which are explained by the selection rule of band-to-band transitions. All the calculation results indicate that the conductivity of Sn 2x Ga 2(1x) O 3 is super to -Ga 2 O 3 , and the calculated results consist with experiments that have been reported. electronic structure, optical properties, -Ga 2 O 3 , Sn 2x Ga 2(1x) O 3 compounds PACS: 71.20.Nr, 78.20.Ci, 81.05.Je, 71.15.Ap, 71.15.Mb -Ga 2 O 3 is an important wide band gap (4.2-4.9 eV) semi-conductor. It has high transmittance from visible to deep ultraviolet (UV) region and has high thermal stability, making it a very promising candidate for the optoelectronic devices operating at short wavelengths. The deep ultraviolet transparent conductive oxide (TCO) films have recently emerged for the uses such as antistatic electric layers of phase shift masks for photolithograph, dielectric films on GaAs substrates in metal oxide semiconductor field effect transistors [1], field effect devices [2], high-temperature gas sensors [3], and transparent electrodes for UV optoelectronic devices [4]. The refractive index value (1.8-1.9) of such films is close to the square root of most III-V semiconductors, which makes it an ideal single layer anti-reflection coating for III-V semiconductors [5]. For this purpose new TCO materials need to be explored. Creating deep-UV transparent conductive films encounters several difficulties. So the interest in its electronic and optical properties has increased because of its potential application as an ultraviolet transparent conducting oxide [6][7][8][9][10]. But the conductivity of the intrinsic -Ga 2 O 3 is too poor to meet the requirements of applications. Thus selecting the appropriate doping elements to improve the electrical conductivity is very important in this regard. Tetravalent tin ion was chosen as the dopant, for the ionic radius of Sn +4 is close to Ga +3 , and the Sn +4 ion prefers six fold coordination, and tends to substitute Ga +3 octahedral sites. Thus, we can expect that the introduction of Sn will result in the formation of shallow donor levels and oxygen vacancies in films. Many experimental studies have been carried out to explore the electronic and optical properties of the Sn 2x Ga 2(1x) O 3 compounds. Masahiro Orita [9] prepared Sn 2x Ga 2(1x) O 3 thin films using pulsed laser deposition method, and electrical conductivity of 8.2 S cm 1 was obtained. Sn 2x Ga 2(1x) O 3 single crystal with (100) plane was grown using floating zone method by Shigeo Ohira [11]. The crystal had a n-type conductivity and a resistivity of 7.92×10 −2  cm. Experimental studies indicate that the Sn 2x Ga 2(1x) O 3 compound is a deep ultraviolet transparent conducting oxide, but so far...

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Section: Geometrical Structuressupporting

confidence: 93%

“…Masahiro Orita [9] prepared Sn 2x Ga 2(1x) O 3 thin films using pulsed laser deposition method, and electrical conductivity of 8.2 S cm 1 was obtained. Sn 2x Ga 2(1x) O 3 single crystal with (100) plane was grown using floating zone method by Shigeo Ohira [11]. The crystal had a n-type conductivity and a resistivity of 7.92×10 −2  cm.…”

mentioning

confidence: 99%

Electronic structure and optical properties of Sn2x Ga2(1−x)O3 compounds

Yan

Zhang

2011

Sci. China Phys. Mech. Astron.

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“…Due to possibility of using high oxygen concentration in a growth chamber, the crucible-free OFZ method was successfully applied to growth b-Ga 2 O 3 single crystals from the melt [12,31,[35][36][37][38]40,84,85]. That method uses a sintered feed rod of Ga 2 O 3 with a seed rod located underneath.…”

Section: B-ga 2 Omentioning

confidence: 99%

“…The crystals were grown along <100>, <010>, and <001> axes. Ohira et al [40] described the following conditions for the OFZ method: growth rate of 7.5-15 mm/h, counterrotation for the feed and seed rods of 20 rpm, and a growth atmosphere of dry air. The rocking curve of the (400) peak of large b-Ga 2 O 3 by the OFZ in Ref.…”

Section: B-ga 2 Omentioning

confidence: 99%

Growth Measures to Achieve Bulk Single Crystals of Transparent Semiconducting and Conducting Oxides

Galazka

2015

Handbook of Crystal Growth

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“…β-Ga 2 O 3 is attracting much attention for its potential use in optoelectronic devices in the ultraviolet (UV) region, for example, one of the transparent conductive oxides (TCOs) [1][2][3][4][5]. β-Ga 2 O 3 crystals have monoclinic structure with the space group C2/m, being different from that of In 2 O 3 .…”

Section: Introductionmentioning

confidence: 99%