Characterization of tunnel oxide passivated contact fabricated by sputtering and ion implantation technique

Abstract

Tunnel oxide passivated contact (TOPCon) structures using highly doped n-type polycrystalline silicon (poly-Si) were fabricated by using facing target sputtering and ion implantation techniques for SiH4 free fabrication process of high efficiency silicon solar cells. We investigated structural and electrical properties of the highly doped n-type poly-Si layers to optimize the ion implantation process. We also investigated the surface passivation quality of our TOPCon structure. Effective carrier lifetime of 2.01 ms and implied open circuit voltage of 704 mV was obtained for our sample annealed at 950 °C. The sample also shows low contact resistance of 3.22×10-3 Ωcm-2. Our results open the way for SiH4 free fabrication process of silicon solar cell using TOPCon structure.