Characterization of unintentional doping in localized epitaxial GaN layers on Si wafers by scanning spreading resistance microscopy

Kaltsounis, Thomas; Haas, Helge; Lafossas, Matthieu; Torrengo, S.; Maurya, Vishwajeet; Buckley, J.; Mariolle, D.; Veillerot, M.; Gueugnot, Alain; Mendizabal, L.; Cordier, Y.; Charles, Matthew

doi:10.1016/j.mee.2023.111964

Cited by 6 publications

(4 citation statements)

References 17 publications

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“…The structure from the bottom to the top, consists of AlN and AlGaN buffer layers, an undoped 300 nm-thick GaN layer and three 350 nm thick n+-GaN layers acting as current spreading layers (5 x 10 16 , 5 x 10 17 and 5 x 10 18 cm -3 Si doping densities respectively increasing from bottom to top). The spreading layer is separated into different doping levels so that they can be used as calibration layers in other studies to examine the doping level in the drift layer on cross-section analysis [15]. A 50 nm-thick Al2O3 mask was deposited on these layers by atomic layer deposition at 300 °C, and was then patterned with photolithography and etching.…”

Section: Methodsmentioning

confidence: 99%

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Study of the Leakage Current Transport Mechanisms in Pseudo-Vertical GaN-on-Silicon Schottky Diode Grown by Localized Epitaxy

EL AMRANI,

Buckley,

Kaltsounis

et al. 2024

Preprint

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In this work, a GaN-on-Si quasi-vertical Schottky diode was demonstrated on a locally grown n-GaN drift layer. The diode achieves a high current density of 2.5 kA/cm², a specific on-resistance RON,sp of 1.9 mΩ.cm² despite the crowding effect in quasi-vertical device and on/off current ratio (Ion/Ioff) of 1010. Temperature-dependent current-voltage characteristics have been measured in the range of 300-433 K to investigate the mechanisms of leakage conduction in the device. At near zero bias, thermionic emission (TE) was found to dominate. At voltage range from -1 to -10 V, electrons gain enough energy to excite into trap states, leading to the dominance of Frenkel-Poole emission (FPE). For a higher voltage range (-10V to -40V), the increased electric field promotes electron hopping along the threading dislocations in the “bulk” GaN layers, and thus, Variable Range Hopping becomes the main mechanism for the whole temperature range. This work provides an in-depth insight into the leakage conduction mechanisms on vertical GaN-on-Si Schottky barrier Diodes (SBDs) grown by localized epitaxy.

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Section: Methodsmentioning

confidence: 99%

“…In this work, we demonstrate quasi-vertical GaN Schottky barrier diodes (SBDs) grown on Si substrates using localized epitaxy [15], and we investigate their electrical performance in forward and reverse mode. The leakage current transport of GaN quasi-vertical SBDs on Si are likely to be different from freestanding GaN-on-GaN SBDs.…”

Section: Introductionmentioning

confidence: 99%

Study of the Leakage Current Transport Mechanisms in Pseudo-Vertical GaN-on-Silicon Schottky Diode Grown by Localized Epitaxy

EL AMRANI,

Buckley,

Kaltsounis

et al. 2024

Preprint

View full text Add to dashboard Cite

show abstract

“…The structure, from the bottom to the top, consists of AlN and AlGaN buffer layers, an undoped 300 nm thick GaN layer and three 350 nm thick n+-GaN layers acting as current spreading layers (5 × 10 16 , 5 × 10 17 and 5 × 10 18 cm −3 Si doping densities, respectively, increasing from bottom to top). The spreading layer is separated into different doping levels so that they can be used as calibration layers in other studies to examine the doping level in the drift layer on cross-section analysis [15]. A 50 nm thick Al 2 O 3 mask was deposited on these layers by atomic layer deposition at 300 • C, and was then patterned with photolithography and etching.…”

Section: Methodsmentioning

confidence: 99%

“…In this work, quasi-vertical GaN Schottky barrier diodes (SBDs) grown on Si substrates using localized epitaxy were demonstrated [15], and their electrical performance in forward and reverse modes were investigated. The leakage current transport in GaN quasi-vertical SBDs on Si is likely to be different from freestanding GaN-on-GaN SBDs.…”

Section: Introductionmentioning

confidence: 99%

Study of Leakage Current Transport Mechanisms in Pseudo-Vertical GaN-on-Silicon Schottky Diode Grown by Localized Epitaxy

El Amrani,

Buckley,

Kaltsounis

et al. 2024

Crystals

Self Cite

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In this work, a GaN-on-Si quasi-vertical Schottky diode was demonstrated on a locally grown n-GaN drift layer using Selective Area Growth (SAG). The diode achieved a current density of 2.5 kA/cm2, a specific on-resistance RON,sp of 1.9 mΩ cm2 despite the current crowding effect in quasi-vertical structures, and an on/off current ratio (Ion/Ioff) of 1010. Temperature-dependent current–voltage characteristics were measured in the range of 313–433 K to investigate the mechanisms of leakage conduction in the device. At near-zero bias, thermionic emission (TE) was found to dominate. By increasing up to 10 V, electrons gained enough energy to excite into trap states, leading to the dominance of Frenkel–Poole emission (FPE). For a higher voltage range (−10 V to −40 V), the increased electric field facilitated the hopping of electrons along the continuum threading dislocations in the “bulk” GaN layers, and thus, variable range hopping became the main mechanism for the whole temperature range. This work provides an in-depth insight into the leakage conduction transport on pseudo-vertical GaN-on-Si Schottky barrier diodes (SBDs) grown by localized epitaxy.

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Localized Epitaxial Growth of 402 V Breakdown Voltage Quasi‐Vertical GaN‐on‐Si p‐n Diode on 200 mm‐Diameter Wafers

Kaltsounis,

El Amrani,

Plaza Arguello

et al. 2024

Physica Status Solidi (a)

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Localized epitaxy of gallium nitride (GaN) on silicon (Si) wafers is an efficient way to relax elastically the tensile stress generated in the GaN layer after growth, allowing epitaxy of thick layers for the fabrication of vertical power devices operating at high voltage. In this study, a 4.7 μm‐thick GaN layer is grown by metal–organic vapor phase epitaxy on 200 mm‐diameter Si wafers for the fabrication of quasi‐vertical Schottky and p‐n diodes. The uniformity of the doping concentration in the layer is mapped spatially by scanning spreading resistance microscopy, while scanning capacitance microscopy illustrates the differently doped regions in the p‐n diode. The net doping concentration is extracted by capacitance–voltage (C–V) measurements and it is found to be about 3 × 1016 cm−3. On a 140 μm‐diameter quasi‐vertical p‐n diode, destructive breakdown occurs at 402 V, with no periphery protection on the device, demonstrating that localized epitaxy of GaN on Si has great potential for vertical high‐power devices.

show abstract

Characterization of unintentional doping in localized epitaxial GaN layers on Si wafers by scanning spreading resistance microscopy

Cited by 6 publications

References 17 publications

Study of the Leakage Current Transport Mechanisms in Pseudo-Vertical GaN-on-Silicon Schottky Diode Grown by Localized Epitaxy

Study of the Leakage Current Transport Mechanisms in Pseudo-Vertical GaN-on-Silicon Schottky Diode Grown by Localized Epitaxy

Study of Leakage Current Transport Mechanisms in Pseudo-Vertical GaN-on-Silicon Schottky Diode Grown by Localized Epitaxy

Localized Epitaxial Growth of 402 V Breakdown Voltage Quasi‐Vertical GaN‐on‐Si p‐n Diode on 200 mm‐Diameter Wafers

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