Characterization of wet-etched GaAs (100) surfaces

Vilar, M. Rei; Beghdadi, J. El; Debontridder, F.; Artzi, Reit; Naaman, Ron; Ferraria, Ana Maria; Rego, A.M. Botelho do

doi:10.1002/sia.2062

Cited by 95 publications

(83 citation statements)

References 26 publications

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“…Liquid samples analysis is considered complimentary to previously reported XPS data and overall data interpretation was based on previously concluded ability of HF and HCl acids to efficiently remove native oxides. [9][10][11] One minute experiments showed that concentrated HF and diluted HCl may leave surface As-rich, while diluted ammonia hydroxide removes In at a slower rate than As and Ga. 30 minute experiment further confirmed observations for concentrated HF, diluted HCl and ammonia hydroxide. Diluted citric acid demonstrated more uniform InGaAs surface layer removal at both 1 minute and 30 minutes exposure.…”

Section: Resultssupporting

confidence: 58%

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III-V on Si Materials Surface Preparation and Process Control for Safety

Vert¹,

Satyavolu²,

Fujita

et al. 2015

ECS J. Solid State Sci. Technol.

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This work studies the effect of wet chemical treatment of III-V based epitaxial layers. III-As high mobility channel materials are considered to be promising candidates and being evaluated for replacing Si NMOS channel in future CMOS devices to sustain further transistor and voltage scaling. Proper surface preparation, native oxide removal and post treatment surface stoichiometry are important when optimizing subsequent deposition of gate stack dielectrics. The results of liquid sampling of waste chemistries from experiments conducted in this work provide an insight into the solubility of InGaAs native oxides and resulting surface conditions. Additional information observed from the estimated etch rates and generation of arsine gas as a by-product of III-V materials interacting with the experimental chemistries allowed evaluating studied reactions for their manufacturability from the process control and safety points of view. The potential of high mobility materials, in particular III-As-based compounds, is attractive for sustaining voltage scaling and providing an alternative to silicon-based CMOS technology in nodes beyond 14 nm. InGaAs channel materials provide a possible solution for integration into future nodes and are currently being considered as a viable material for future high mobility NMOS channels.1 A wide range of direct-bandgap III-V materials are also attractive for integration with Si photonics due to superior optoelectronics performance, efficiency and ability to provide solutions for integrated laser and compact modulator. 2,3Proper treatment of III-V materials surface prior to deposition of dielectrics or just removal of contaminants is considered one of the critical steps in new non-silicon technology. III-V materials tend to oxidize quickly when exposed to the atmosphere, forming both group III and group V native oxides on the surface. The first goal of a treatment is to efficiently remove these oxides while maintaining original crystalline film stoichiometry. The resultant post-treatment surface condition may affect both device performance and reliability. Treatment step is critically important for minimizing interface defect density as well as controlling contaminants such as the formation of mobile ions and limiting their possible diffusion into subsequently deposited dielectric layers.In this paper we explore several wet chemical treatment chemistries for surface preparation of an In(0.53)GaAs layer on an InAlAs/GaAs buffer grown on a 300 mm silicon wafer. Investigated chemistries include DI water, concentrated and diluted HF, concentrated nitric acid, diluted HCl, diluted citric acid, diluted ammonia hydroxide and hydrogen peroxide. While XPS measurements is an accurate and sensitive method for detecting surface condition post wets treatment, we have chosen to analyze liquid samples obtained from the etch experiments for trace concentrations of As, In, Ga and Al. In this way we have eliminated the uncertainty created by re-oxidation after the treatment and obtained detailed data on the...

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Section: Resultssupporting

confidence: 58%

“…[7][8][9][10] Nitric acid also acts as a strong oxidizer and thus achieves high etch rates. We suggested a simplified scheme for describing the etching mechanism where two processes of oxidation and oxide etching need to be happening simultaneously in order to achieve etching of bulk III-V layers.…”

Section: Resultsmentioning

confidence: 99%

III-V on Si Materials Surface Preparation and Process Control for Safety

Vert¹,

Satyavolu²,

Fujita

et al. 2015

ECS J. Solid State Sci. Technol.

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“…These films are usually stable, yet they can be chemically etched. [18,19] The reports on GaAs native oxides are inconsistent in their compositional analyses; for example, the Ga/As ratios vary significantly and appear to depend both on instrumentation and the etchant used. [20 -23] Furthermore, not all oxidation states of Ga and As were correctly identified by XPS.…”

Section: Introductionmentioning

confidence: 99%

Interfacial characterization of chemical solution‐deposited thin films of PbSe on GaAs(100)

Shandalov

Rozenblat

Kedem

et al. 2008

Surface & Interface Analysis

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The microstructure and composition of the interfacial layer between chemically deposited PbSe and GaAs substrates were studied using high-resolution transmission electron microscopy (HRTEM), Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS) and energy-filtered TEM.The thickness of the interfacial layer varied significantly from direct contact of the film with the substrate to 5 nm in the thickest regions. The results established the presence of a discontinuous, amorphous intermediate layer of Ga 2 O 3 at the PbSe/GaAs interface.

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“…[26] The need to develop a reliable method for passivating GaAs surfaces was realized long ago. [27] It is especially important for any in vivo application, in which one has to protect the GaAs surface and prevent toxic arsenic compounds from getting in contact with living systems.…”

Section: Mocser-based Biosensorsmentioning

confidence: 99%

The Molecular Controlled Semiconductor Resistor: A Universal Sensory Technology

Capua

Kumar

Tkachev

et al. 2014

Israel Journal of Chemistry

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We review some of the sensors based on the molecular control semiconductor resistor (MOCSER) technology. The technology can be applied for developing highly sensitive and selective molecular sensors that operate both in gas and in liquid environments. Specifically, we describe here a set of GaAs gas‐phase sensors based on an array constructed from several elements, each coated with a different sensing molecule. Coating the same semiconductor device with an ultrathin polymer layer also allows the use of the device in a harsh liquid environment and in performing measurements in physiological liquids. Hence, the MOCSER‐based platform opens the way for producing inexpensive, easy to use, and robust sensors for a wide variety of applications.

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Characterization of wet-etched GaAs (100) surfaces

Cited by 95 publications

References 26 publications

III-V on Si Materials Surface Preparation and Process Control for Safety

III-V on Si Materials Surface Preparation and Process Control for Safety

Interfacial characterization of chemical solution‐deposited thin films of PbSe on GaAs(100)

The Molecular Controlled Semiconductor Resistor: A Universal Sensory Technology

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